Oxygen Diffusion along Symmetric [0001] Tilt Grain Boundaries in α-Alumina

2006 ◽  
Vol 317-318 ◽  
pp. 415-418 ◽  
Author(s):  
Tsubasa Nakagawa ◽  
Isao Sakaguchi ◽  
Katsuyuki Matsunaga ◽  
Takahisa Yamamoto ◽  
Hajime Haneda ◽  
...  

Grain boundary diffusion coefficients of oxygen (δDgb) at 1793K in high purity α-alumina bicrystals with Σ7{2 _ ,310}/[0001] and Σ31{7 _ ,1140}/[0001] symmetric tilt grain boundaries were measured by means of the isotopic exchange and diffusion depth profiling using SIMS. δDgb of both grain boundaries were determined to be 7.1x10-24 [m3/sec] for Σ7 grain boundary and 5.3 x10-24 [m3/sec] for Σ31 grain boundary, respectively. These results indicate that Σ values do not directly relate to grain boundary diffusion properties.

2004 ◽  
Vol 821 ◽  
Author(s):  
Markus J. Buehler ◽  
Alexander Hartmaier ◽  
Huajian Gao

AbstractIn a recent study of diffusional creep in polycrystalline thin films deposited on substrates, we have discovered a new class of defects called the grain boundary diffusion wedges (Gao et al., Acta Mat. 47, pp. 2865-2878, 1999). These diffusion wedges are formed by stress driven mass transport between the free surface of the film and the grain boundaries during the process of substrate-constrained grain boundary diffusion. The mathematical modeling involves solution of integro-differential equations representing a strong coupling between elasticity and diffusion. The solution can be decomposed into diffusional eigenmodes reminiscent of crack-like opening displacement along the grain boundary which leads to a singular stress field at the root of the grain boundary. We find that the theoretical analysis successfully explains the difference between the mechanical behaviors of passivated and unpassivated copper films during thermal cycling on a silicon substrate. An important implication of our theoretical analysis is that dislocations with Burgers vector parallel to the interface can be nucleated at the root of the grain boundary. This is a new dislocation mechanism in thin films which contrasts to the well known Mathews-Freund-Nix mechanism of threading dislocation propagation. Recent TEM experiments at the Max Planck Institute for Metals Research have shown that, while threading dislocations dominate in passivated metal films, parallel glide dislocations begin to dominate in unpassivated copper films with thickness below 400 nm. This is consistent with our theoretical predictions. We have developed large scale molecular dynamics simulations of grain boundary diffusion wedges to clarify the nucleation mechanisms of parallel glide in thin films. Such atomic scale simulations of thin film diffusion not only show results which are consistent with both continuum theoretical and experimental studies, but also revealed the atomic processes of dislocation nucleation, climb, glide and storage in grain boundaries. The study should have far reaching implications for modeling deformation and diffusion in micro- and nanostructured materials.


2008 ◽  
Vol 277 ◽  
pp. 221-226
Author(s):  
Valerie M. Koloskov ◽  
V.L. Gapontsev

The new way of calculation of segregation enthalpy on the basis of grain boundary diffusion data is offered. It proceeds from the primary data on an interval "B"- regime of grain boundary diffusion. For data processing we used the expression for coefficient of grain boundary diffusion got by Borisov and Lubov according to Fisher model for a tail part of the concentration curve. To approve this approach the data of tellurium diffusion in grain boundary of polycrystalline silver are considered.


1998 ◽  
Vol 527 ◽  
Author(s):  
E. Rabkin ◽  
W. Gust

ABSTRACTWe consider the problem of solute diffusion and segregation in the grain boundaries moving during a phase transformation in the framework of Cahn's impurity drag model. The concept of a dynamic segregation factor for the diffusion along moving grain boundaries is introduced. The difference between static and dynamic segregation factors may cause the apparent difference of the triple product of the segregation factor, grain boundary width and grain boundary diffusion coefficient for stationary and moving grain boundaries. The difference between static and dynamic segregation is experimentally verified for the Cu(In)-Bi system, for which the parameters of static segregation are well-known. It is shown that the complications associated with the dynamic segregation may be avoided during the study of the discontinuous ordering reaction. From the kinetics of this reaction, the activation energy of the grain boundary self-diffusion can be determined.


1983 ◽  
Vol 25 ◽  
Author(s):  
E. C. Zingu ◽  
J. W. Mayer

ABSTRACTInterdiffusion in the Si<100>/Pd2Si/Ni and Si<111>/Pd2Si/Ni thin film systems has been investigated using Rutherford backscattering spectrometry. Nickel is found to diffuse along the grain boundaries of polycrystalline Pd2Si upon which it accumulates at the Si<100>Pd2Si interface. The high mobility of Ni compared to that of si suggests that Pd diffuses faster than Si along the Pd2Si grain boundaries. An activation energy of 1.2 eV is determined for Ni grain boundary diffusion in Pd2Si.


1999 ◽  
Vol 586 ◽  
Author(s):  
S. R. Phillpot ◽  
P. Keblinski ◽  
D. Wolf ◽  
F. Cleri

ABSTRACTWe have recently developed a novel molecular-dynamics simulation method to grow polycrystals from a melt containing randomly oriented crystalline seeds. The resulting microstructures contain only randomly oriented (i.e., high-energy) grain boundaries. We find that these grain boundaries, which are highly constrained by their close proximity to grain junctions, are highly disordered in fcc metals and amorphous in silicon. From simulations of infinitely extended high-energy grain boundaries in bicrystals, we find that such highly disordered and amorphous grain boundaries are actually the thermodynamic ground state; by contrast, low-energy grain boundaries are crystalline. High-energy grain boundaries in diamond, however, are structurally ordered at the expense of a significant amount of graphite-like bonding. We show that these complex grain boundary structures have important effects on properties including grain boundary diffusion (fcc metals and silicon), grain boundary diffusion creep (silicon) and grain boundary electrical activity and strength (diamond). The implications for engineering materials with prescribed properties are discussed.


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