Defect Structure in (Zn,Mg)O Films Prepared on YSZ Substrate

2006 ◽  
Vol 320 ◽  
pp. 103-106 ◽  
Author(s):  
Haruki Ryoken ◽  
Isao Sakaguchi ◽  
Naoki Ohashi ◽  
Yutaka Adachi ◽  
Takeshi Ohgaki ◽  
...  

The defect structure of undoped ZnO and (Zn1-x,Mgx)O solid-solution films were deposited on YSZ substrate with pulsed laser deposition (PLD) to investigate defect equilibria in those films. In particular, the effects of thermal treatment on the structures and prosperities of (Zn1-x,Mgx)O solid-solution films were examined. The films with high MgO concentration (x>0.12) decomposed to the wurtzite-type and rock-salt-type phase after thermal treatment, indicating that the solubility limit of Mg was about x=0.12 and the wurtzite-type (Zn,Mg)O films with x>0.12 were indicated to be non-equilibrium ones. The subsequent analyses of oxygen diffusivity in those films revealed that the films under non-equilibrium state, i.e., wurtzite-type (Zn1-x,Mgx)O with x>0.12, contained significantly high concentration of anion defects.

Author(s):  
Ryo Wakabayashi ◽  
Kohei Yoshimatsu ◽  
Mai Hattori ◽  
Jung-Soo Lee ◽  
Osami Sakata ◽  
...  

2002 ◽  
Vol 199 (1-4) ◽  
pp. 303-306 ◽  
Author(s):  
Koyo Sakamoto ◽  
Kei Inumaru ◽  
Shoji Yamanaka

2008 ◽  
Vol 92 (23) ◽  
pp. 232108 ◽  
Author(s):  
Takeo Ohsawa ◽  
Naoki Ohashi ◽  
Yutaka Adachi ◽  
Isao Sakaguchi ◽  
Haruki Ryoken ◽  
...  

2010 ◽  
Vol 1256 ◽  
Author(s):  
Guochu Deng ◽  
Paul Muralt

AbstractWe present a systematic study of semiconductor and dielectric properties as a function of annealing treatments at CCTO thin films deposited by pulsed laser deposition at 720 °C in 200 mTorr oxygen. The as-deposited thin film samples contain a high concentration of defects that contribute to the semiconductivity in the interior of grains. With increasing annealing temperature, the apparent dielectric constant decreases, and the resistance increases, both at a given temperature (e.g. room temperature). After annealing at 680oC, the semiconductivity was almost completely suppressed and CaCu3Ti4O12 behaved as a dielectric material. Knowing that oxygen vacancies are removed during annealing, one can infer that the dopant states are related to oxygen vacancies. A double plateau behavior in the dielectric constant vs temperature graph indicates that there are at least two defect levels in CaCu3Ti4O12 thin films. This was confirmed by simulating the capacitance response of a Schottky barrier containing two defect levels. Apart of the usual acceptor level, a trap at 500 meV from the valence band was identified. The finally achieved quasi intrinsic material exhibits a negative temperature dependency of the dielectric constant below 120 K.


2011 ◽  
Vol 72 (11) ◽  
pp. 1218-1224 ◽  
Author(s):  
B.D. Ngom ◽  
S. Lafane ◽  
A. Dioum ◽  
N. Manyala ◽  
S. Abdelli-Messaci ◽  
...  

1998 ◽  
Vol 54 (1-3) ◽  
pp. 173-176 ◽  
Author(s):  
Naohiro Watanabe ◽  
Norifumi Takahashi ◽  
Kuniro Tsushima

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