Hard x-ray photoemission spectroscopy in wurtzite-type zinc magnesium oxide solid-solution films grown by pulsed-laser deposition

2008 ◽  
Vol 92 (23) ◽  
pp. 232108 ◽  
Author(s):  
Takeo Ohsawa ◽  
Naoki Ohashi ◽  
Yutaka Adachi ◽  
Isao Sakaguchi ◽  
Haruki Ryoken ◽  
...  
Keyword(s):  
Solid Solution ◽  
Pulsed Laser Deposition ◽  
Magnesium Oxide ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
Oxide Solid Solution ◽  
Zinc Magnesium Oxide

(Mg,Zn)O/ZnO Heterostructures Prepared by Pulsed Laser Deposition

2008 ◽  
Vol 388 ◽  
pp. 3-6 ◽  
Author(s):  
Yutaka Adachi ◽  
Naoki Ohashi ◽  
Isao Sakaguchi ◽  
Takeo Osawa ◽  
Haruki Ryoken ◽  
...  
Keyword(s):  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
Band Spectra ◽  
Domain Inversion ◽  
Surface Morphologies ◽  
Zno Single Crystal

(Mg,Zn)O films were grown on Zn- and O-face ZnO single crystal substrates by pulsed laser deposition. The surface morphologies of the films grown on the Zn- and O-face substrates were quite different, indicating that no domain inversion occurred in both films. The films showed markedly different features for valence band spectra obtained by hard X-ray photoemission spectroscopy. This suggests that the effect of film polarity should be considered in X-ray photoemission spectroscopy.

Epitaxial Stabilization of Complete Solid-solution β-(AlxGa1–x)2O3 (100) Films by Pulsed-laser Deposition

2021 ◽  
Author(s):  
Ryo Wakabayashi ◽  
Kohei Yoshimatsu ◽  
Mai Hattori ◽  
Jung-Soo Lee ◽  
Osami Sakata ◽  
...  
Keyword(s):  
Solid Solution ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Complete Solid Solution

X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES ON THE BONDING PROPERTIES OF AMORPHOUS CARBON NITRIDE FILMS SYNTHESIZED BY PULSED LASER DEPOSITION WITH DIFFERENT SUBSTRATE TEMPERATURES

2005 ◽  
Vol 12 (02) ◽  
pp. 185-195
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Pulsed Laser Deposition ◽  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Measurement Techniques ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Amorphous Carbon Nitride ◽  
Substrate Temperatures

Amorphous carbon nitride films ( a-CN x) were deposited by pulsed laser deposition of camphoric carbon target with different substrate temperatures (ST). The influence of ST on the synthesis of a-CN x films was investigated. The nitrogen-to-carbon (N/C) and oxygen-to-carbon (O/C) atomic ratios, bonding state, and microstructure of the deposited a-CN x films were characterized by X-ray photoelectron spectroscopy and were confirmed by other standard measurement techniques. The bonding states between C and N , and C and O in the deposited films were found to be significantly influenced by ST during the deposition process. The N/C and O/C atomic ratios of the a-CN x films reached the maximum value at 400°C. ST of 400°C was proposed to promote the desired sp 3-hybridized C and the C 3 N 4 phase. The C–N bonding of C–N , C=N and C≡N were observed in the films.

Pulsed laser deposition of novel nitride solid solution films NixTi1−xNy on MgO(0 0 1)

2002 ◽  
Vol 199 (1-4) ◽  
pp. 303-306 ◽  
Author(s):  
Koyo Sakamoto ◽  
Kei Inumaru ◽  
Shoji Yamanaka
Keyword(s):  
Solid Solution ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

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