Fabrication and Application of MoSi2 Thin Film Electric Heaters

2006 ◽  
Vol 320 ◽  
pp. 95-98 ◽  
Author(s):  
Yuki Itoh ◽  
Kenichi Wakisaka ◽  
Masashi Satoh ◽  
Shinzo Yoshikado
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Magnetron Sputtering ◽  
Electric Power ◽  
High Vacuum ◽  
Rf Magnetron Sputtering ◽  
Molybdenum Silicide ◽  
Alumina Crucible ◽  
Linear Resistance

Thin-film heaters made of molybdenum silicide (MoSi2) were fabricated by RF magnetron sputtering, and the heating characteristics of these heaters in a high vacuum were evaluated. The crystal structure of thin-film was hexagonal contrary to the tetragonal one of the target. MoSi2 thin-film heaters deposited outside an alumina crucible showed almost linear resistance-temperature (R-T ) characteristics. However, resistance decreased due to repeated heatings. The heaters generated almost no contamination in vacuum. The temperature of the crucible reached 1000°C at an electric power of 190 W.

Properties of Electrolyte and Electrode Films Prepared by RF and DC Magnetron Sputtering

1988 ◽  
Vol 135 ◽  
Author(s):  
J. B. Bates ◽  
N. J. Dudney ◽  
Y. T. Chu ◽  
P. Mazumdar
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Growth ◽  
High Vacuum ◽  
Lithium Ion ◽  
Rf Magnetron Sputtering ◽  
Ceramic Materials ◽  
Ceramic Thin Films ◽  
Ion Conducting

Increased interest in ion conducting thin films and thin-film devices is evidenced by the number of papers on this topic presented at the recent Garmisch conference [1[. Magnetically enhanced (magnetron) sputtering [2,3] is an important technique for depositing these as well as other kinds of ceramic thin films. Two advantages of magnetron over conventional diode sputtering are the increased sputtering rate, which is important in the deposition of ceramic materials, and the reduction in electron bombardment of the substrate and growing film. In this paper, we describe our high-vacuum film growth chamber and present the results of tests of this system in fabricating films of lithium ion conducting glass electrolytes, TiS2, and vanadium oxide by reactive dc and rf magnetron sputtering. The results of combining these films into a thin film lithium battery also are discussed.

Effect of Al2O3-doping on the structure and optoelectronic characteristics of MgZnO thin film prepared by RF magnetron sputtering

2021 ◽  
Vol 127 (7) ◽  
Author(s):  
Du-Cheng Tsai ◽  
Feng-Kuan Chen ◽  
Zue-Chin Chang ◽  
Bing-Hau Kuo ◽  
Erh-Chiang Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Al2o3 Doping

Electron Conduction of Nd0.6Sr0.4FeO3−δ Thin Film with Oxygen Vacancies Prepared by RF Magnetron Sputtering

2017 ◽  
Vol 86 (7) ◽  
pp. 074704 ◽  
Author(s):  
Wataru Namiki ◽  
Takashi Tsuchiya ◽  
Makoto Takayanagi ◽  
Shoto Furuichi ◽  
Makoto Minohara ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Oxygen Vacancies ◽  
Rf Magnetron Sputtering ◽  
Electron Conduction

125MeV Si9+ ion irradiation of calcium phosphate thin film coated by rf-magnetron sputtering technique

2011 ◽  
Vol 257 (6) ◽  
pp. 2134-2141 ◽  
Author(s):  
K. Elayaraja ◽  
M.I. Ahymah Joshy ◽  
R.V. Suganthi ◽  
S. Narayana Kalkura ◽  
M. Palanichamy ◽  
...  
Keyword(s):  
Thin Film ◽  
Calcium Phosphate ◽  
Magnetron Sputtering ◽  
Ion Irradiation ◽  
Rf Magnetron Sputtering

Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering

2003 ◽  
Vol 82 (7) ◽  
pp. 1117-1119 ◽  
Author(s):  
P. F. Carcia ◽  
R. S. McLean ◽  
M. H. Reilly ◽  
G. Nunes
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Thin Film Transistor ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Film

PROPERTIES OF ALL-SOLID-STATE LITHIUM-ION RECHARGEABLE BATTERIES DEPOSITED BY RF MAGNETRON SPUTTERING

2013 ◽  
Vol 27 (22) ◽  
pp. 1350156 ◽  
Author(s):  
R. J. ZHU ◽  
Y. REN ◽  
L. Q. GENG ◽  
T. CHEN ◽  
L. X. LI ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solid State ◽  
Magnetron Sputtering ◽  
Coulombic Efficiency ◽  
Electronic Conductivity ◽  
Lithium Ion ◽  
Rf Magnetron Sputtering ◽  
Rechargeable Batteries ◽  
Voltage Range

Amorphous V 2 O 5, LiPON and Li 2 Mn 2 O 4 thin films were fabricated by RF magnetron sputtering methods and the morphology of thin films were characterized by scanning electron microscopy. Then with these three materials deposited as the anode, solid electrolyte, cathode, and vanadium as current collector, a rocking-chair type of all-solid-state thin-film-type Lithium-ion rechargeable battery was prepared by using the same sputtering parameters on stainless steel substrates. Electrochemical studies show that the thin film battery has a good charge–discharge characteristic in the voltage range of 0.3–3.5 V, and after 30 cycles the cell performance turned to become stabilized with the charge capacity of 9 μAh/cm2, and capacity loss of single-cycle of about 0.2%. At the same time, due to electronic conductivity of the electrolyte film, self-discharge may exist, resulting in approximately 96.6% Coulombic efficiency.

scholarly journals Fabrication and Testing of All-solid-state Nanoscale Lithium Batteries Using LiPON for Electrolytes

2018 ◽  
Vol 53 ◽  
pp. 01008
Author(s):  
Feihu Tan ◽  
XiaoPing Liang ◽  
Feng Wei ◽  
Jun Du
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solid State ◽  
Magnetron Sputtering ◽  
Specific Capacity ◽  
Rf Magnetron Sputtering ◽  
Open Circuit ◽  
Working Pressure ◽  
Thin Film Battery ◽  
A Current

The amorphous LiPON thin film was obtained by using the crystalline Li3PO4 target and the RF magnetron sputtering method at a N2 working pressure of 1 Pa. and then the morphology and composition of LiPON thin films are analysed by SEM and EDS. SEM shows that the film was compact and smooth, while EDS shows that the content of N in LiPON thin film was about 17.47%. The electrochemical properties of Pt/LiPON/Pt were analysed by EIS, and the ionic conductivity of LiPON thin films was 3.8×10-7 S/cm. By using the hard mask in the magnetron sputtering process, the all-solid-state thin film battery with Si/Ti/Pt/LiCoO2/LiPON/Li4Ti5O12/Pt structure was prepared, and its electrical properties were studied. As for this thin film battery, the open circuit voltage was 1.9 V and the first discharge specific capacity was 34.7 μAh/cm2·μm at a current density of 5 μA/cm-2, indicating that is promising in all-solidstate thin film batteries.

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