Planarization of Zinc Oxide Surface and Evaluation of Processing Damage

The processes for polishing a ZnO surface were investigated with the aim of establishing a process for obtaining an atomically flat surface with high crystalline quality. The defects in a layer undergoing mechanical polishing were monitored through photoluminescence measurements, and the purity of the polished surface was characterized by SIMS. An atomicallyfishing process.

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Additive-free 1,4-butanediol mediated synthesis: a suitable route to obtain nanostructured, mesoporous spherical zinc oxide materials with multifunctional properties

RSC Advances ◽

10.1039/c5ra20224h ◽

2015 ◽

Vol 5 (121) ◽

pp. 99976-99989 ◽

Cited By ~ 11

Author(s):

Diana Visinescu ◽

Mariana Scurtu ◽

Raluca Negrea ◽

Ruxandra Birjega ◽

Daniela C. Culita ◽

...

Keyword(s):

Zinc Oxide ◽

Crystalline Quality ◽

Oxide Materials ◽

High Crystalline Quality ◽

Multifunctional Properties

A family of mesoporous, self-aggregated zinc oxide materials with spherical morphologies of high crystalline quality, is obtained through a facile, additive-free polyol procedure.

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Characterization of zinc oxide single crystals for epitaxial wafer applications

MRS Proceedings ◽

10.1557/proc-799-z5.40 ◽

2003 ◽

Vol 799 ◽

Cited By ~ 7

Author(s):

Naoki Ohashi ◽

Takeshi Ohgaki ◽

Shigeaki Sugimura ◽

Katsumi Maeda ◽

Isao Sakaguchi ◽

...

Keyword(s):

Zinc Oxide ◽

Single Crystals ◽

Potassium Hydroxide ◽

Flat Surface ◽

Growth Direction ◽

Wafer Surface ◽

Crystal Shape ◽

Atomically Flat ◽

Secondary Ion

ABSTRACTZinc oxide (ZnO) single crystals were grown by the hydrothermal method using lithium and potassium hydroxide as mineralizer and properties of the grown crystals were characterized from the viewpoints of epitaxial wafer applications. The growth sector dependence of impurity and defect concentrations were characterized by secondary ion mass spectroscopy and photoluminescence. As a result, it was clearly shown that defect and impurity distribution in the obtained crystal was anisotropic, and this anisotropy is affected by the choice of the seed crystal shape and growth direction. Annealing effect on flatness of the wafer surface was also examined, and it was found that high temperature annealing with flat single crystalline cover is appropriate for removal of scratch and formation of atomically flat surface. Moreover, we show the possible miss-evaluation of Hall coefficient of ZnO due to anisotropy in defects and impurities distributions.

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Evolution of High-Quality Homoepitaxial CVD Diamond Films Induced by Methane Concentration

Coatings ◽

10.3390/coatings11080888 ◽

2021 ◽

Vol 11 (8) ◽

pp. 888

Author(s):

Pengfei Zhang ◽

Weidong Chen ◽

Longhui Zhang ◽

Shi He ◽

Hongxing Wang ◽

...

Keyword(s):

Methane Concentration ◽

Flat Surface ◽

Microwave Plasma ◽

Diamond Films ◽

Chemical Vapor ◽

Plasma Chemical ◽

High Quality ◽

Effect Analysis ◽

Plasma Chemical Vapor Deposition ◽

Atomically Flat

In this paper, we successfully synthesized homoepitaxial diamond with high quality and atomically flat surface by microwave plasma chemical vapor deposition. The sample presents a growth rate of 3 μm/h, the lowest RMS of 0.573 nm, and the narrowest XRD FWHM of 31.32 arcsec. An effect analysis was also applied to discuss the influence of methane concentration on the diamond substrates.

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