Evolution of High-Quality Homoepitaxial CVD Diamond Films Induced by Methane Concentration
Keyword(s):
In this paper, we successfully synthesized homoepitaxial diamond with high quality and atomically flat surface by microwave plasma chemical vapor deposition. The sample presents a growth rate of 3 μm/h, the lowest RMS of 0.573 nm, and the narrowest XRD FWHM of 31.32 arcsec. An effect analysis was also applied to discuss the influence of methane concentration on the diamond substrates.
2009 ◽
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1992 ◽
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2018 ◽
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