Enhanced Piezoelectric Properties of CaBi2Nb2O9 with Eu Modification and Templated Grain Growth

2012 ◽  
Vol 512-515 ◽  
pp. 1367-1371 ◽  
Author(s):  
Huan Bei Chen ◽  
Ji Wei Zhai

Calcium bismuth niobate (CaBi2Nb2O9, CBN) is a high Curie temperature (Tc) piezoelectric material, however, their piezoelectric properties are very poor. In order to improve the piezoelectric performance of CBN, the Eu modification and texture method (templated grain growth, TGG) were applied in this material system. The piezoelectric properties of CBN ceramics were significantly enhanced by Eu modification. The 5mol% Eu dopants in CBN ceramics have a higher piezoelectric constant and higher Tc (d33=12.8pC/N, Tc=945°C) than that of undoped CBN ceramics (d33=6.2pC/N, Tc=930°C). Highly textured 5mol% Eu doped CBN ceramics with 92% Lotgering factor were obtained by the TGG technique. The piezoelectric properties of textured and modified CBN ceramics are anisotropic on different directions of perpendicular (d33=0.1pC/N) and parallel (d33=20.5pC/N) to tape stacking direction. Furthermore, they had excellent thermostable piezoelectric properties from room temperature to near Curie temperature. The textured Eu modified CBN ceramics with high Tc and high piezoelectric properties might be a promising candidate for high-temperature piezoelectric applications.

2010 ◽  
Vol 25 (4) ◽  
pp. 687-694 ◽  
Author(s):  
Yunfei Chang ◽  
Stephen F. Poterala ◽  
Zupei Yang ◽  
Susan Trolier-McKinstry ◽  
Gary L. Messing

This paper demonstrates the production of 〈00l〉-oriented CuO-doped (K0.476Na0.524)NbO3 (KNN) piezoelectric ceramics with a polymorphic phase transition (PPT) temperature greater than 180 °C by templated grain growth (TGG) using high aspect ratio NaNbO3 template particles. A novel (to the KNN system) two-step sintering and annealing process combined with CuO doping is demonstrated to improve density and maximize texture quality (F00l = 99% and rocking curve FWHM = 6.9°) in textured KNN ceramics. The best electromechanical properties (kp ≈ 0.58, k31 ≈ 0.33, d33 ≈ 146 pC/N, To-t ≈ 183 °C, Tc ≈ 415 °C, εr = 202, and tan δ = 0.016) are achieved in 1 mol% CuO-doped KNN with F00l = 99% and a relative density of 96.3%. The values of d33, kp, and k31 are 70–90% higher than randomly oriented ceramics and are obtained without a significant reduction in the PPT temperature, resulting in stable piezoelectric performance over a wide temperature range (−50 to 180 °C). These results show that high-quality textured KNN can be obtained by TGG and that a reactive matrix is unnecessary.


2010 ◽  
Vol 146-147 ◽  
pp. 89-92
Author(s):  
Zhi Gang Gai ◽  
Yuan Yuan Feng ◽  
Jin Feng Wang ◽  
Hong Wu

Na0.5Bi4.5Ti4O15-based materials with A-site vacancy were synthesized using conventional solid state processing. The (Li,Ce) modification of Na0.5Bi4.5Ti4O15-based materials resulted in the obvious improvement of the piezoelectric activity and dielectric permittivity. The dielectric and piezoelectric properties of Na0.5Bi4.5Ti4O15-based ceramics exhibiting a very stable temperature behavior, together with its high TC ~641oC, excellent piezoelectric coefficient ~28pC/N and very low temperature coefficient of resonant frequency, making the (Li,Ce) modified Na0.5Bi4.5Ti4O15-based ceramics a promising candidate for high temperature applications.


2021 ◽  
Author(s):  
Yuanyuan Sun ◽  
Huabin Yang ◽  
Jiwen Xu ◽  
Weiran Huang ◽  
Minhong Jiang ◽  
...  

Abstract The structure, microstructure, piezoelectric properties, ferroelectric properties and Curie temperature of (1- x )BiFeO 3 - x BaTiO 3 -Bi(Zn 0.5 Ti 0.5 )O 3 +MnO 2 +Li 2 CO 3 ceramics were investigated experimentally by improved solid-state reaction approach. The crystalline structures were examined by X-ray diffractometry. When x = 0.3, the rhombohedral and pseudocubic phases coexist in the ceramic structure. It is considered that the morphotropic phase boundary was formed here. At the same time, the piezoelectric performance d 33 , Curie temperature T C , and depolarization temperature are as high as 184 pC/N, 550°C, 530°C at x = 0.3, respectively. It is worth noting that when x = 0.24, the ceramics have a high T C = 580°C and low dielectric loss tan δ = 1.9%. These results show that the BFBT-BZT system ceramics are applicable ceramics with high piezoelectric properties in high temperature fields.


2015 ◽  
Vol 30 (14) ◽  
pp. 2144-2150 ◽  
Author(s):  
Dan-dan Wei ◽  
Qi-bin Yuan ◽  
Gao-qun Zhang ◽  
Hong Wang

Abstract


2007 ◽  
Vol 46 (10B) ◽  
pp. 7039-7043 ◽  
Author(s):  
Satoshi Wada ◽  
Kotaro Takeda ◽  
Tomomitsu Muraishi ◽  
Hirofumi Kakemoto ◽  
Takaaki Tsurumi ◽  
...  

2020 ◽  
Vol 843 ◽  
pp. 155865 ◽  
Author(s):  
Dou Zhang ◽  
Shaofeng Zhang ◽  
Xi Yuan ◽  
Xuefan Zhou ◽  
He Qi ◽  
...  

2006 ◽  
Vol 320 ◽  
pp. 15-18 ◽  
Author(s):  
Takuya Sawada ◽  
Hirozumi Ogawa ◽  
Masahiko Kimura ◽  
Kosuke Shiratsuyu ◽  
Akira Ando

A study has been done for the piezoelectric properties in texured ceramics of SrBi2Nb2O9 (SBN) fabricated by the templated grain growth (TGG) method. Remanent polarization along to the stacking direction increased with the orientation degrees. That corresponds to the increases in electro-mechanical coupling coefficient with orientation degree. The temperature coefficient of the resonant frequency (TCF) in thickness sheer vibration mode changed from negative to positive with increasing orientation degrees, and an excellent TCF of -0.4 ppm/°C was obtained for the specimen with an orientation degree of 76%.


2013 ◽  
Vol 566 ◽  
pp. 50-53
Author(s):  
Fumiaki Kawada ◽  
Yuji Hiruma ◽  
Hajime Nagata ◽  
Tadashi Takenaka

Grain-oriented 0.8(Bi1/2K1/2)TiO3-0.2BaTiO3 (BKT-BT20) ceramics were prepared by the Reactive Templated Grain Growth (RTGG) method. The BKT-BT20 ceramics sintered at 1070°C for 100 h. The grain-oriented BKT-BT20 exhibited relatively high orientation factor, F, of 0.87 and density ratio of 92%. A resistivity of textured BKT-BT20 was 1.29×1013 Ωcm. Piezoelectric strain constant, d33, and the normalized strain, d33*, of the textured BKTBT20 ceramic in the direction parallel (//) to the tape stacking direction were 117 pC/N and 243 pm/V (at 80 kV/cm), respectively.


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