Crystal Growth and Characterization of (Bi0.5Na0.5)TiO3-BaTiO3 Single Crystals Obtained by the Top-Seeded Solution Growth Method under High-Pressure Oxygen Atmosphere

2013 ◽  
Vol 566 ◽  
pp. 25-28
Author(s):  
Hiroaki Onozuka ◽  
Yuuki Kitanaka ◽  
Yuji Noguchi ◽  
Masaru Miyayama
Keyword(s):  
Vacancy Concentration ◽  
Solution Growth ◽  
Oxygen Vacancy Concentration ◽  
Low Oxygen ◽  
High Oxygen Pressure ◽  
Growth Method ◽  
High Pressure Oxygen ◽  
Top Seeded Solution Growth ◽  
Large Remanent Polarization

A single crystal of ferroelectric 0.88(Bi,Na)TiO30.12BaTiO3 (BNTBT) solid solution with tetragonal P4mm structure was grown by the top-seeded solution growth (TSSG) method at a high oxygen pressure (PO2) of 0.9 MPa. The crystals grown by the high-PO2 TSSG method exhibited a large remanent polarization (Pr) of 54 μC/cm2, which leads to a spontaneous polarization of 54 μC/cm2. The large Pr compared with that of crystals grown at PO2 = 0.1 MPa is suggested to originate from a low oxygen vacancy concentration for the crystals grown at a higher PO2. The high-PO2 TSSG method was demonstrated to be effective for obtaining BNTBT crystals with superior polarization and piezoelectric properties.

Leakage Current and Polarization Properties of (Bi0.5Na0.5)TiO3-BaTiO3 Single Crystals

2013 ◽  
Vol 582 ◽  
pp. 96-99 ◽  
Author(s):  
Kiyotaka Hirano ◽  
Hiroaki Onozuka ◽  
Yuuki Kitanaka ◽  
Yuji Noguchi ◽  
Masaru Miyayama
Keyword(s):  
Oxygen Vacancy ◽  
Single Crystal ◽  
Single Crystals ◽  
Leakage Current ◽  
Remanent Polarization ◽  
Vacancy Concentration ◽  
Oxygen Vacancy Concentration ◽  
Low Oxygen ◽  
High Oxygen Pressure ◽  
Top Seeded Solution Growth

Single crystal of ferroelectric (Bi,Na)TiO3BaTiO3(BNTBT) with tetragonalP4mmstructure grown by a top-seeded solution growth (TSSG) method at a high oxygen pressure (PO2) of 0.9 MPa and their properties were compared with those of the crystals grown at aPO2of 0.1 MPa. The crystals obtained atPO2= 0.9 MPa exhibited a remanent polarization (Pr) of 54μC/cm2, which was much larger than those of the crystals grown atPO2= 0.1 MPa (20μC/cm2). It is suggested that the largePris attributed to a low oxygen vacancy concentration.

Growth and characterization of ternary BiScO3–Pb(Cd1/3Nb2/3)O3–PbTiO3 ferroelectric single crystals with high Curie temperature

CrystEngComm ◽  
2020 ◽  
Vol 22 (27) ◽  
pp. 4544-4551
Author(s):  
Zeng Luo ◽  
Jian Zhuang ◽  
Zenghui Liu ◽  
Nan Zhang ◽  
Wei Ren ◽  
...  
Keyword(s):  
Curie Temperature ◽  
Single Crystals ◽  
Solution Growth ◽  
High Curie Temperature ◽  
High Quality ◽  
Domain Structures ◽  
Growth Method ◽  
Top Seeded Solution Growth

BiScO3–Pb(Cd1/3Nb2/3)O3–PbTiO3 single crystals with high quality have been successfully grown by the top-seeded solution growth method and the single ferroelastic domain structures and ferroelectric behaviors have also been reviewed.

Characterization of Pb(In1/2Nb1/2)O3–PbTiO3 ferroelectric crystals grown by top-seeded solution growth method

2012 ◽  
Vol 539 ◽  
pp. 17-20 ◽  
Author(s):  
Chao He ◽  
Xiuzhi Li ◽  
Zujian Wang ◽  
Ying Liu ◽  
Dongquan Shen ◽  
...  
Keyword(s):  
Solution Growth ◽  
Ferroelectric Crystals ◽  
Growth Method ◽  
Top Seeded Solution Growth

Ferroelectric and Piezoelectric Properties of Bi4Ti3O12 Single Crystals Grown by Top-Seeded Solution Growth Method at High Oxygen Pressure

2011 ◽  
Vol 485 ◽  
pp. 73-76
Author(s):  
Yuuki Kitanaka ◽  
Yuji Noguchi ◽  
Masaru Miyayama
Keyword(s):  
Single Crystals ◽  
Oxygen Pressure ◽  
High Performance ◽  
Piezoresponse Force Microscopy ◽  
High Oxygen ◽  
Solution Growth ◽  
Force Microscopy ◽  
High Oxygen Pressure ◽  
Growth Method ◽  
Top Seeded Solution Growth

High-performance single crystals of ferroelectric Bi4Ti3O12 (BiT) have been successfully obtained via the top-seeded solution growth under high oxygen pressure (Po2) atmosphere. Crystals grown at 960°C at a Po2 of 0.9 MPa exhibited a well-saturated hysteresis loop with a remanent polarization of 48 mC/cm2 and a coercive field of 29 kV/cm. The results of piezoresponse force microscopy indicate that polarization switching is accomplished throughout the BiT crystals obtained. Electric-field-induced strain measurements along the a axis yield a piezoelectric constant d11* of 37 pm/V for BiT.

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