Deposition of Boron Nitride Films by Filament-Assisted CVD Using Tris(Bimethylamino)Borane Precursor

2015 ◽  
Vol 661 ◽  
pp. 142-148 ◽  
Author(s):  
Yong Jin ◽  
Shigeo Yasuhara ◽  
Tetsuhide Shimizu ◽  
Ming Yang
Keyword(s):  
Boron Nitride ◽  
Flow Rate ◽  
Gas Flow ◽  
Hexagonal Boron Nitride ◽  
Nitrogen Concentration ◽  
Chemical Vapor ◽  
Gas Flow Rate ◽  
Ammonia Gas ◽  
Filament Temperature ◽  
Boron Nitride Films

Boron nitride films were deposited on silicon substrate by a hot filament assisted chemical vapor deposition (HFCVD) system. The tris (dimethylamino) borane (B[N(CH3)2]3) was used as the single source precursor which has both the boron and nitrogen source, ammonia gas was used as the assisted gas to increase the nitrogen concentration in the films. The films deposited by different ratios of precursor to ammonia gas flow rate and filament temperatures were investigated. The boron-carbon-nitrogen (BCN) compound films were deposited under lower filament temperature. With increasing the ammonia gas flow rate, the carbon concentration in the films decreased. Fourier transform infrared spectroscopy (FT-IR) and transmission electron microscopy (TEM) image reveal that hexagonal boron nitride (hBN) films were deposited at the higher filament temperature of 2000°C. Moreover, the crystallization degree of the films became better with the filament temperature increased.

Effects of Reaction Conditions on MoS2 Thin Film Formation Synthesized by Chemical Vapor Deposition using Organic Precursor

MRS Advances ◽  
2016 ◽  
Vol 2 (29) ◽  
pp. 1533-1538 ◽  
Author(s):  
S. Ishihara ◽  
Y. Hibino ◽  
N. Sawamoto ◽  
T. Ohashi ◽  
K. Matsuura ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Film Formation ◽  
Chemical Vapor ◽  
Gas Flow Rate ◽  
Axis Orientation

ABSTRACTMolybdenum disulfide (MoS2) thin films were fabricated by two-step chemical vapor deposition (CVD) using (t-C4H9)2S2 and the effects of temperature, gas flow rate, and atmosphere on the formation were investigated in order to achieve high-speed low-temperature MoS2 film formation. From the results of X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) investigations, it was confirmed that c-axis orientation of the pre-deposited Mo film has a significant involvement in the crystal orientation after the reaction low temperature sulfurization annealing and we successfully obtained 3 nm c-axis oriented MoS2 thin film. From the S/Mo ratios in the films, it was revealed that the sulfurization reaction proceeds faster with increase in the sulfurization temperature and the gas flow rate. Moreover, the sulfurization under the H2 atmosphere promotes decomposition reaction of (t-C4H9)2S2, which were confirmed by XPS and density functional theory (DFT) simulation.

Chemical Vapor Deposition and Etching of High-Quality Monolayer Hexagonal Boron Nitride Films

ACS Nano ◽  
2011 ◽  
Vol 5 (9) ◽  
pp. 7303-7309 ◽  
Author(s):  
Peter Sutter ◽  
Jayeeta Lahiri ◽  
Peter Albrecht ◽  
Eli Sutter
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
High Quality ◽  
Boron Nitride Films

Structural and Optical Properties of ZnO Nanotetrapods Deposited by Thermal Chemical Vapor Deposition with Different Gas Flow Rate

2015 ◽  
Vol 1109 ◽  
pp. 456-460
Author(s):  
Najwa Ezira Ahmed Azhar ◽  
Shafinaz Sobihana Shariffudin ◽  
Aimi Bazilah Rosli ◽  
A.K.S. Shafura ◽  
Mohamad Rusop
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Gas Flow Rate ◽  
Structural And Optical Properties ◽  
Thermal Chemical Vapor Deposition ◽  
Yellow Orange

ZnO nanotetrapod with different oxygen flow rate was prepared by thermal chemical vapor deposition. We have successfully deposited ZnO nanotetrapod on synthesis Zn powder using double furnace with argon (Ar) and oxygen (O2) gas as source material. In this study, we report the effect of different gas flow rate (5 sccm to 15 sccm) on structural and optical properties of the ZnO nanotetrapod. The morphology of ZnO nanotetrapods were analyzed by field emission scanning electron microscope (FE-SEM). It exhibits the length of the nanotetrapods arm decrease with increased of flow rate and diameter of nanotetrapod in range 30 nm to 90 nm. The optical properties were determined through XRD and photoluminescence with 2θ (30o to 80o) and wavelength 350 nm to 620 nm respectively. PL spectra show that the UV emission centred at 380 nm while yellow-orange emission centred at 540 nm.

Deposition on SS 316 at Different Gas Flow Rates Using Thermal CVD

2012 ◽  
Vol 576 ◽  
pp. 594-597 ◽  
Author(s):  
Mohammad Asaduzzaman Chowdhury ◽  
Dewan Muhammad Nuruzzaman
Keyword(s):  
Friction Coefficient ◽  
Wear Rate ◽  
Deposition Rate ◽  
Flow Rate ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Gas Flow Rate ◽  
Flow Rates

A hot filament thermal chemical vapor deposition (CVD) reactor was used to deposit solid thin films on stainless steel 316 (SS 316) substrates at different flow rates of natural gas. The variation of thin film deposition rate with the variation of gas flow rate has been investigated experimentally. During experiment, the effect of gap between activation heater and substrate on the deposition rate has also been observed. Results show that deposition rate on SS 316 increases with the increase in gas flow rate. It is also observed that deposition rate increases with the decrease in gap between activation heater and substrate within the observed range. In addition, friction coefficient and wear rate of SS 316 sliding against SS 304 under different normal loads are also investigated before and after deposition. The experimental results reveal that improved friction coefficient and wear rate are obtained after deposition as compared to that of before deposition.

Epitaxially Grown Hexagonal Boron Nitride Films on Sapphire and Silicon Substrates

2020 ◽  
Vol 843 ◽  
pp. 90-96
Author(s):  
Xi Chen ◽  
Chun Bo Tan ◽  
Kai Ran Luan ◽  
Shuai Wang ◽  
Fang Ye Li ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Pressure Chemical ◽  
Boron Source ◽  
Α Al2o3 ◽  
Boron Nitride Films

Hexagonal boron nitride (hBN) films were epitaxially grown on (100)-Oriented silicon and c-plane sapphire (α-Al2O3) substrates via a low-pressure chemical vapor deposition (LPCVD) method with boron trichloride (BCl3) and ammonia (NH3) as the boron source and nitrogen source. Crystalline quality differences between hBN films grown on different substrates are studied and discussed by XPS, Raman spectroscopy, XRD and SEM characterizations. All the characterization results indicate that the sapphire substrate is more suitable for epitaxial growth of hBN films than silicon substrates.

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