High Temperature Oxidation Behavior of Silicon Carbide Ceramic

2016 ◽  
Vol 680 ◽  
pp. 89-92 ◽  
Author(s):  
Ming Wei Chen ◽  
Hai Peng Qiu ◽  
Jian Jiao ◽  
Yu Wang ◽  
Wei Jie Xie
Keyword(s):  
Silicon Carbide ◽  
Ceramic Matrix Composite ◽  
Sio2 Film ◽  
Oxidation Products ◽  
Low Oxygen ◽  
Temperature Oxidation ◽  
Molecular Gases ◽  
Oxidation Thermodynamics ◽  
Sic Ceramic ◽  
High Temperature Oxidation Behavior

Oxidation thermodynamics of silicon carbide (SiC)ceramic was studied by means of HSC Chemistry code, and the weight change, morphology and phase of oxidation products were analyzed by thermogravimetric analysis(TG), scanning electron microscopy(SEM ) and X-ray diffraction (XRD). The results showed that SiC ceramic could be oxidized to silicon dioxide(SiO2) with release of small molecular gases under oxidizing atmosphere at 800°C, and the formed SiO2 film with appropriate fluidity and low oxygen diffusion coefficient could prevent the spread of oxygen with the oxidation temperature increasing up to 1200°C, which favored the anti-oxidation of SiC ceramic matrix composite.

scholarly journals High-temperature oxidation behavior of reaction-formed silicon carbide ceramics

1995 ◽  
Vol 10 (12) ◽  
pp. 3232-3240 ◽  
Author(s):  
Linus U.J.T. Ogbuji ◽  
M. Singh
Keyword(s):  
Silicon Carbide ◽  
Weight Loss ◽  
Oxidation Product ◽  
Oxidation Behavior ◽  
Light And Electron Microscopy ◽  
Initial Weight Loss ◽  
Temperature Oxidation ◽  
Carbide Ceramics ◽  
High Temperature Oxidation Behavior ◽  
Silicon Carbide Ceramics

The oxidation behavior of reaction-formed silicon carbide (RFSC) ceramics was investigated in the temperature range of 1100 to 1400 °C. The oxidation weight change was recorded by TGA; the oxidized materials were examined by light and electron microscopy, and the oxidation product by x-ray diffraction analysis (XRD). The materials exhibited initial weight loss, followed by passive weight gain (with enhanced parabolic rates, kp), and ending with a negative (logarithmic) deviation from the parabolic law. The weight loss arose from the oxidation of residual carbon, and the enhanced kp values from internal oxidation and the oxidation of residual silicon, while the logarithmic kinetics is thought to have resulted from crystallization of the oxide. The presence of a small amount of MoSi2 in the RFSC material caused a further increase in the oxidation rate. The only solid oxidation product for all temperatures studied was silica.

Influence of Features of Silicon Carbide Ceramic Matrix Composite (Cp/SiC) on Carbon Content

2012 ◽  
Vol 512-515 ◽  
pp. 1639-1642 ◽  
Author(s):  
You Jun Lu ◽  
Yan Min Wang
Keyword(s):  
Silicon Carbide ◽  
Carbon Particle ◽  
Ceramic Matrix Composite ◽  
Mechanochemical Method ◽  
Resistant Material ◽  
Silicon Carbide Ceramic ◽  
Sic Ceramic ◽  
Sic Composites ◽  
Fire Resistant Material ◽  
Better Than

In this article, the properties of carbon particle modified silicon carbide (Cp/SiC) composites was studied. The mixture powder of nano carbon black and submicro-SiC was prepared through soft mechanochemical method. Then Cp/SiC composites was pressureless sintered.The result shows that appropriate content of carbon is 25 percent in this condition the machinability of Cp/SiC is better than that of SiC ceramic. At the same time, the oxidation resistence, wear resistence, and flexure strength of Cp/SiC meet the challenge for special fire resistant material.

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