Infrared Spectra Investigation of CuO-Al2O3 Precursors Produced by Electrochemical Oxidation of Copper and Aluminum Using Alternating Current

2016 ◽  
Vol 712 ◽  
pp. 65-70 ◽  
Author(s):  
Natalya Usoltseva ◽  
Valery Korobochkin ◽  
Alesya S. Dolinina ◽  
Alexander M. Ustyugov

Joint electrochemical oxidation of copper and aluminum using alternating current (AC) was performed. The electrolysis products were dried on air (method carbonate) and at the residual pressure of 3-5 kPa (oxide method). Cu-Al layered double hydroxide (Cu-Al/LDH) are formed at air carbonization. Oxide method saves copper (I) oxide. Heat treatment causes the decomposition of LDH to CuO and Al2O3 as well as Cu2O oxidation to CuO. Copper-aluminum spinel (CuAl2O4) is the product of solid-phase interaction of copper and aluminum oxides. Infrared spectra revealed that oxide method provides the boehmite dehydration and metal oxides interaction at lower temperature despite the fact that the poorly crystallized copper (II) oxide is formed at LDH decomposition.

2020 ◽  
Vol 65 (3) ◽  
pp. 236
Author(s):  
R. M. Rudenko ◽  
O. O. Voitsihovska ◽  
V. V. Voitovych ◽  
M. M. Kras’ko ◽  
A. G. Kolosyuk ◽  
...  

The process of crystalline silicon phase formation in tin-doped amorphous silicon (a-SiSn) films has been studied. The inclusions of metallic tin are shown to play a key role in the crystallization of researched a-SiSn specimens with Sn contents of 1–10 at% at temperatures of 300–500 ∘C. The crystallization process can conditionally be divided into two stages. At the first stage, the formation of metallic tin inclusions occurs in the bulk of as-precipitated films owing to the diffusion of tin atoms in the amorphous silicon matrix. At the second stage, the formation of the nanocrystalline phase of silicon occurs as a result of the motion of silicon atoms from the amorphous phase to the crystalline one through the formed metallic tin inclusions. The presence of the latter ensures the formation of silicon crystallites at a much lower temperature than the solid-phase recrystallization temperature (about 750 ∘C). A possibility for a relation to exist between the sizes of growing silicon nanocrystallites and metallic tin inclusions favoring the formation of nanocrystallites has been analyzed.


ACS Catalysis ◽  
2018 ◽  
Vol 8 (6) ◽  
pp. 5533-5541 ◽  
Author(s):  
Wu-Jun Liu ◽  
Lianna Dang ◽  
Zhuoran Xu ◽  
Han-Qing Yu ◽  
Song Jin ◽  
...  

2019 ◽  
Vol 146 ◽  
pp. 650-657 ◽  
Author(s):  
Victor dos Santos Azevedo Leite ◽  
Brenda Gabriela Lima de Jesus ◽  
Valber Georgio de Oliveira Duarte ◽  
Vera Regina Leopoldo Constantino ◽  
Celly Mieko Shinoraha Izumi ◽  
...  

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