Growth of ZnSe Nanowires and their Photoluminescence Spectra

2018 ◽  
Vol 790 ◽  
pp. 55-59 ◽  
Author(s):  
Shunji Ozaki ◽  
Kazuya Matsumoto
Keyword(s):  
Zinc Selenide ◽  
Vapor Transport ◽  
Near Band Edge ◽  
Photoluminescence Spectra ◽  
Fused Quartz ◽  
Colored Product ◽  
Znse Nanowires ◽  
Quartz Substrates ◽  
Transport Method ◽  
Vapor Transport Method

Zinc selenide (ZnSe) nanowires were grown on Si and fused quartz substrates by a simple vapor transport method of heating the ZnSe powder at 1100 °C in a tube of the furnace. The obtained yellow colored product has indicated to be the high density of ZnSe nanowires with diameters ranging from 50 to 200 nm. Low-temperature photoluminescence spectra for ZnSe nanowires show near band-edge emissions. The free excitonic emissions were observed at ~2.8 eV.

Growth of Ga2O3 Nanowires by a Vapor Transport Method and their Optical Transmittance Spectra

2020 ◽  
Vol 38 ◽  
pp. 3-9
Author(s):  
Shunji Ozaki ◽  
Yuki Nakahata
Keyword(s):  
Optical Transmittance ◽  
Vapor Transport ◽  
Bandgap Energy ◽  
Transmittance Spectra ◽  
Si Substrates ◽  
Gallium Metal ◽  
Fused Quartz ◽  
Colored Product ◽  
Transport Method ◽  
Vapor Transport Method

Gallium oxide (Ga2O3) nanowires were grown on fused quartz and Si substrates by a vapor transport method of heating gallium metal at 750−1100 °C in a tube of the horizontal furnace. The obtained white colored product has shown to be the Ga2O3 nanowires with average diameters ranging from 30 to 80 nm. The optical transmittance spectra indicated that the bandgap energy of Ga2O3 nanowire increases as the diameter of nanowire decreases.

scholarly journals High Optical Response of Niobium-Doped WSe2-Layered Crystals

Materials ◽  
2019 ◽  
Vol 12 (7) ◽  
pp. 1161 ◽  
Author(s):  
Hung-Pin Hsu ◽  
Der-Yuh Lin ◽  
Jhin-Jhong Jheng ◽  
Pin-Cheng Lin ◽  
Tsung-Shine Ko
Keyword(s):  
Chemical Vapor ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
Near Band Edge ◽  
Frequency Dependent ◽  
Time Resolved ◽  
Niobium Doped ◽  
Layered Crystals ◽  
Transport Method ◽  
Vapor Transport Method

The optical properties of WSe2-layered crystals doped with 0.5% niobium (Nb) grown by the chemical vapor transport method were characterized by piezoreflectance (PzR), photoconductivity (PC) spectroscopy, frequency-dependent photocurrent, and time-resolved photoresponse. With the incorporation of 0.5% Nb, the WSe2 crystal showed slight blue shifts in the near band edge excitonic transitions and exhibited strongly enhanced photoresponsivity. Frequency-dependent photocurrent and time-resolved photoresponse were measured to explore the kinetic decay processes of carriers. Our results show the potential application of layered crystals for photodetection devices based on Nb-doped WSe2-layered crystals.

Growth of Large Quantity ZnO Nanowires and their Optical Properties

2013 ◽  
Vol 596 ◽  
pp. 121-125 ◽  
Author(s):  
Shunji Ozaki ◽  
Kouichi Morozumi
Keyword(s):  
Optical Properties ◽  
Photoluminescence Spectrum ◽  
Free Exciton ◽  
Zno Nanowires ◽  
Vapor Transport ◽  
Near Band Edge ◽  
Si Substrates ◽  
Transport Method ◽  
Vapor Transport Method ◽  
Low Temperature Photoluminescence

Zinc oxide (ZnO) nanowires were grown on Si substrates by a simple vapor transport method of heating the mixture of ZnO and carbon powders at 1100 °C in a tube of the furnace. The obtained large-quantity cotton-like product has indicated to be the high density of ZnO nanowires with diameters ranging from 50 to 250 nm. Low-temperature photoluminescence spectrum for ZnO nanowires shows sharp near band-edge emissions. The free exciton-polariton emissions were observed at ~3.376 eV.

Polycrystalline zinc selenide films deposited by a low‐temperature close‐spaced‐vapor‐transport method

1984 ◽  
Vol 56 (6) ◽  
pp. 1752-1755 ◽  
Author(s):  
C. Falcony ◽  
F. Sánchez‐Sinencio ◽  
J. S. Helman ◽  
O. Zelaya ◽  
C. Menezes
Keyword(s):  
Low Temperature ◽  
Zinc Selenide ◽  
Vapor Transport ◽  
Polycrystalline Zinc ◽  
Transport Method ◽  
Vapor Transport Method

Facile synthesis of rhenium disulfide flakes by vacuum vapor transport method

2019 ◽  
Vol 111 ◽  
pp. 191-194 ◽  
Author(s):  
Sihong Zhang ◽  
Jianyu Wang ◽  
Peng Chen ◽  
Yan Lu ◽  
Weiwei Hou ◽  
...  
Keyword(s):  
Vapor Transport ◽  
Facile Synthesis ◽  
Transport Method ◽  
Vapor Transport Method

Growth of SiOx Nanowires by Simple Vapor Transport Method and their Optical Properties

2013 ◽  
Vol 534 ◽  
pp. 141-145 ◽  
Author(s):  
Yuto Hakamada ◽  
Shunji Ozaki
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Silicon Monoxide ◽  
Vapor Transport ◽  
X Ray ◽  
Si Substrates ◽  
Vls Growth ◽  
Transport Method ◽  
Vapor Transport Method ◽  
Scanning Electron

SiOx nanowires were grown on Si substrates by a simple vapor transport method of heating the mixture of silicon monoxide and carbon powders at 1000 °C in a tube of the furnace. The dependence of the growth velocity on the growth temperature and on the radius of nanowires indicates that the SiOx nanowires grow through the vaporliquidsolid (VLS) growth mechanism. The properties of the nanowires are characterized using scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL).

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