Growth of Ga2O3 Nanowires by a Vapor Transport Method and their Optical Transmittance Spectra

Gallium oxide (Ga2O3) nanowires were grown on fused quartz and Si substrates by a vapor transport method of heating gallium metal at 750−1100 °C in a tube of the horizontal furnace. The obtained white colored product has shown to be the Ga2O3 nanowires with average diameters ranging from 30 to 80 nm. The optical transmittance spectra indicated that the bandgap energy of Ga2O3 nanowire increases as the diameter of nanowire decreases.

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Growth of ZnSe Nanowires and their Photoluminescence Spectra

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.790.55 ◽

2018 ◽

Vol 790 ◽

pp. 55-59 ◽

Cited By ~ 1

Author(s):

Shunji Ozaki ◽

Kazuya Matsumoto

Keyword(s):

Zinc Selenide ◽

Vapor Transport ◽

Near Band Edge ◽

Photoluminescence Spectra ◽

Fused Quartz ◽

Colored Product ◽

Znse Nanowires ◽

Quartz Substrates ◽

Transport Method ◽

Vapor Transport Method

Zinc selenide (ZnSe) nanowires were grown on Si and fused quartz substrates by a simple vapor transport method of heating the ZnSe powder at 1100 °C in a tube of the furnace. The obtained yellow colored product has indicated to be the high density of ZnSe nanowires with diameters ranging from 50 to 200 nm. Low-temperature photoluminescence spectra for ZnSe nanowires show near band-edge emissions. The free excitonic emissions were observed at ~2.8 eV.

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Growth of SiOx Nanowires by Simple Vapor Transport Method and their Optical Properties

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.534.141 ◽

2013 ◽

Vol 534 ◽

pp. 141-145 ◽

Cited By ~ 3

Author(s):

Yuto Hakamada ◽

Shunji Ozaki

Keyword(s):

Electron Microscopy ◽

Photoelectron Spectroscopy ◽

Silicon Monoxide ◽

Vapor Transport ◽

X Ray ◽

Si Substrates ◽

Vls Growth ◽

Transport Method ◽

Vapor Transport Method ◽

Scanning Electron

SiOx nanowires were grown on Si substrates by a simple vapor transport method of heating the mixture of silicon monoxide and carbon powders at 1000 °C in a tube of the furnace. The dependence of the growth velocity on the growth temperature and on the radius of nanowires indicates that the SiOx nanowires grow through the vaporliquidsolid (VLS) growth mechanism. The properties of the nanowires are characterized using scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL).

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Growth of Large Quantity ZnO Nanowires and their Optical Properties

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.596.121 ◽

2013 ◽

Vol 596 ◽

pp. 121-125 ◽

Cited By ~ 2

Author(s):

Shunji Ozaki ◽

Kouichi Morozumi

Keyword(s):

Optical Properties ◽

Photoluminescence Spectrum ◽

Free Exciton ◽

Zno Nanowires ◽

Vapor Transport ◽

Near Band Edge ◽

Si Substrates ◽

Transport Method ◽

Vapor Transport Method ◽

Low Temperature Photoluminescence

Zinc oxide (ZnO) nanowires were grown on Si substrates by a simple vapor transport method of heating the mixture of ZnO and carbon powders at 1100 °C in a tube of the furnace. The obtained large-quantity cotton-like product has indicated to be the high density of ZnO nanowires with diameters ranging from 50 to 250 nm. Low-temperature photoluminescence spectrum for ZnO nanowires shows sharp near band-edge emissions. The free exciton-polariton emissions were observed at ~3.376 eV.

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