Nanomaterial Production by Arc Discharge Sputtering of Silicon-Graphite and Silica-Graphite Composite Anodes

2019 ◽  
Vol 805 ◽  
pp. 94-99
Author(s):  
Alexey V. Zaikovskii
Keyword(s):  
Silicon Carbide ◽  
Silicon Oxide ◽  
Arc Discharge ◽  
Graphite Composite ◽  
Silicon Carbon ◽  
Sic Ceramic ◽  
Composite Anodes ◽  
Average Size ◽  
Synthesized Materials ◽  
Graphene Structures

This study presents results of an arc discharge synthesis of nanomaterials containing graphene and nanoparticles of SiC ceramic. It has been established that the usage of the silicon-carbon composition of the sputtered electrode in the arc discharge synthesis allows to synthesize graphene structures with silicon carbide nanoparticles with the average size of about 6.2 nm. On the other hand, the usage of the graphite-silica composite electrode also leads to the formation of graphene structures, but at the same time the resulting nanoparticles of silicon carbide have the larger average size of about 9.5 nm. This paper presents the results of the structure analyses of the synthesized materials and offers the explanation for effects of the silicon oxide usage on the increasing in the average size of synthesized SiC nanoparticles.

scholarly journals The Production of Silicon Carbide and Achievements in the Field of Furnace Gases Collection and Purification

2020 ◽  
Author(s):  
K.S. Yolkin ◽  
A.V. Sivtsov ◽  
D.K. Yolkin ◽  
A.I. Karlina
Keyword(s):  
Silicon Carbide ◽  
Silicon Oxide ◽  
Arc Discharge ◽  
Chemical Properties ◽  
Reduction Process ◽  
Reducing Agents ◽  
Reducing Agent ◽  
Gas Cleaning ◽  
Two Stages ◽  
Physical And Chemical

Silicon carbide is obtained in ore-thermal furnaces by reduction of silica (quartzite) with carbon. The use of silicon carbide in the production of technical silicon as a carrier of the target element and as a reducing agent can significantly improve the technical and economic performance (TEP) melting. The process of reducing silicon melting in electric furnaces takes place in two stages. First, silicon carbide is formed as a pseudomorphosis over the carbon of the reducing agent, then silicon carbide interacts with silicon oxide to form elementary silicon. Physical and chemical properties of silicon carbides obtained with the use of various reducing agents were studied. The reducing potential and reaction ability of carbides depends on how their surface is developed. Carbide volume and density characteristics are obtained on the matrices of charcoal and petroleum coke. For comparison, data for carbide obtained in the Acheson furnace are presented. Measurements of relative electrical resistivity of the reducing agent were performed and obtained on the carbides basis with temperature in the range of 700–1700∘C. For comparison, the RER values of silicon carbide obtained in the Acheson furnace are given, the resistance of carbides is several times higher than the RER of the corresponding reducing agents, which favorably affects the furnaces smelting silicon electric mode. As a result of the silicon carbide addition to the charge, the power of the arc discharge increases and the intensity of the reduction process increases. Keywords: silicon carbide, gas cleaning dust, gas capture system

scholarly journals Obtaining Silicon Oxide Nanoparticles Doped with Fluorine and Gold Particles by the Pulsed Plasma-Chemical Method

2019 ◽  
Vol 2019 ◽  
pp. 1-6
Author(s):  
Galina Kholodnaya ◽  
Roman Sazonov ◽  
Denis Ponomarev ◽  
Igor Zhirkov
Keyword(s):  
Chemical Synthesis ◽  
Silicon Oxide ◽  
Fine Particles ◽  
Chemical Reactor ◽  
Beam Diameter ◽  
Pulsed Plasma ◽  
Plasma Chemical ◽  
Plasma Chemical Synthesis ◽  
Transmission Electron ◽  
Average Size

This paper presents a study on pulsed plasma-chemical synthesis of fluorine- and gold-doped silicon oxide nanopowder. The gold- and fluorine-containing precursors were gold chloride (AuCl3) and sulphur hexafluoride (SF6). Pulsed plasma-chemical synthesis is realized on the laboratory stand, including a plasma-chemical reactor and TEA-500 electron accelerator. The parameters of the electron beam are as follows: 400–450 keV electron energy, 60 ns half-amplitude pulse duration, up to 200 J pulse energy, and 5 cm beam diameter. We confirmed the composite structure of SixOy@Au by using transmission electron microscopy and energy-dispersive spectroscopy. We determined the chemical composition and morphology of synthesized SixOy@Au and SixOy@F nanocomposites. The material contained a SixOy@Au carrier with an average size of 50–150 nm and a shell of fine particles with an average size of 5–10 nm.

scholarly journals Synthesis of silicon carbide in arc discharge in fuel oil

2021 ◽  
Vol 1870 (1) ◽  
pp. 012005
Author(s):  
B A Timerkaev ◽  
V S Felzinger ◽  
A Akhmetvaleeva ◽  
D A Zainutdinova ◽  
A A Zalyalieva ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Arc Discharge ◽  
Fuel Oil

scholarly journals Получение карбида бора в низковольтной электрической дуге постоянного тока, инициированной в открытом воздушном пространстве

2018 ◽  
Vol 44 (14) ◽  
pp. 26 ◽  
Author(s):  
А.Я. Пак ◽  
Г.Я. Мамонтов
Keyword(s):  
Boron Carbide ◽  
Arc Discharge ◽  
Electron Microscopic Examination ◽  
X Ray Diffraction ◽  
Electron Microscopic ◽  
Vacuum Equipment ◽  
X Ray ◽  
Gas Atmosphere ◽  
Average Size ◽  
Carbide Particles

AbstractWe describe a method of obtaining ultrafine boron carbide (B_13C_2) powder using the effect of a dc electric arc on a mixture of initial reactants containing carbon and boron. A peculiarity of the proposed method is that it can be implemented using arc discharge operating in open air without any vacuum equipment and protective inert gas atmosphere. X-ray diffraction data showed that the synthesized product in the general case contained three crystalline phases: boron carbide (B_13C_2), graphite (C), and boron oxide (B_2O_3). Electron-microscopic examination showed that the average size of boron carbide particles ranged from ~50 nm to ~2 μm.

Reclamation of Abrasive Slurry to Obtain SiC Ceramic Material

2022 ◽  
Vol 905 ◽  
pp. 333-337
Author(s):  
Sheng Fu Yang ◽  
Chun Liang Chen ◽  
Kuang Li Chien ◽  
Chih Chao Liang ◽  
Hsien Ho Chuo
Keyword(s):  
Silicon Carbide ◽  
Chemical Separation ◽  
Distribution Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sic Ceramic ◽  
Illegal Waste Disposal ◽  
Main Component ◽  
The Cost ◽  
Illegal Waste

In the period of silicon and silicon carbide wafer slicing process, the abrasive oil, silicon carbide (SiC), silicon and trace elements e.g., iron, zinc, copper, and nickel is generated as an oily mixture of insoluble matter. The SiC is the main component (>70%) in the abrasive slurry and the extraction of SiC from the slurry can eliminate the risk of illegal waste disposal and reduce the cost for the enterprises. In this study, a chemical separation process is applied to remove silicon particles and SiC can be extracted from the slurry mixtures. The X-ray diffraction analysis revealed that recycled material is moissanite with two crystalline polymorphs. The 3C and 6H X-ray powder pattern is observed and the cubic and hexagonal crystalline structure is revealed. The particle size distribution analysis showed that median value of purified SiC powder material is 9.8 μm.

Converting micro-sized kerf-loss silicon waste to high-performance hollow-structured silicon/carbon composite anodes for lithium-ion batteries

2020 ◽  
Vol 4 (9) ◽  
pp. 4780-4788 ◽  
Author(s):  
Qiang Ma ◽  
Jiakang Qu ◽  
Xiang Chen ◽  
Zhuqing Zhao ◽  
Yan Zhao ◽  
...  
Keyword(s):  
Lithium Ion Batteries ◽  
High Performance ◽  
Low Cost ◽  
Lithium Ion ◽  
Carbon Composite ◽  
Lithium Storage ◽  
Practical Applications ◽  
Storage Performance ◽  
Silicon Carbon ◽  
Composite Anodes

Low-cost feedstocks and rationally designed structures are the keys to determining the lithium-storage performance and practical applications of Si-based anodes for lithium-ion batteries (LIBs).

Experimental Study of SiC Ceramic Grinding Subsurface Cracks

2014 ◽  
Vol 1027 ◽  
pp. 146-149
Author(s):  
Min Hui Liu ◽  
Fei Hu Zhang ◽  
Guo Dong Lu
Keyword(s):  
Silicon Carbide ◽  
Surface Layer ◽  
Large Diameter ◽  
Maximum Depth ◽  
Surface Cracks ◽  
Subsurface Cracks ◽  
Sic Ceramic ◽  
Ceramic Grinding ◽  
The Impact ◽  
Silicon Carbide Ceramics

Silicon carbide ceramics with its excellent physical and mechanical properties have become the preferred material for space large diameter mirror. Diamond wheel grinding is the main way of SiC ceramics forming processing. Subsurface cracks is generated due to the high hardness and brittleness of the material after grinding. In order to remove the impact of cracks, poishing processing with very low efficiency is applied, so it is significant to control the depth of silicon carbide ceramic grinding subsurface cracks and shorten the processing cycle.In this paper grinding experiment of SiC ceramic is conducted. The method of cross-section polishing combined with scanning electron microscope observation is used to research grinding subsurface cracks. The depth of broken surface layer and the maximum depth of sub-surface cracks were proposed to evaluate the grinding subsurface cracks. The result show broken surface layer depth and the maximum depth of sub-surface cracks increase with the decreasement of spindle speed, and increasement of feed rate and grinding depth.

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