Positron Annihilation Spectroscopy, Electrical Resistivity, and Microstructural Transmission Electron Microscopy Studies of the Cu-Mn System

1997 ◽  
Vol 255-257 ◽  
pp. 572-574 ◽  
Author(s):  
E.-M. Nicht ◽  
G.H. Bauer ◽  
Miroslav Cieslar ◽  
P. Vostrý
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electrical Resistivity ◽  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
Transmission Electron

scholarly journals Structure of Rapidly Solidified Al-Fe-Cr-Ce Alloy

2011 ◽  
Vol 465 ◽  
pp. 199-202 ◽  
Author(s):  
Alena Michalcová ◽  
Dalibor Vojtěch ◽  
Pavel Novák ◽  
Ivan Procházka ◽  
Jakub Čížek ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thermal Stability ◽  
Transmission Electron Microscopy ◽  
Positron Annihilation ◽  
Melt Spinning ◽  
Positron Annihilation Spectroscopy ◽  
Transmission Electron ◽  
Rapidly Solidified ◽  
Thermal Stability Of

An alloy containing Al – 3wt.% Cr – 3wt.% Fe – 0.8wt. % Ce, was prepared by melt spinning. Structure of obtained ribbons was observed by light, scanning and transmission electron microscopy. It was found out that the structure is very fine. Microhardness of cross sectioned ribbons was also measured. Defects in structure were determined by positron annihilation spectroscopy. The thermal stability of the alloy was observed by comparing rapidly solidified ribbons and ribbons annealed at 400°C and at 500°C for 100 h

Anomalous Evolution of Bubbles in Krypton-Implanted SiO2

2007 ◽  
Vol 994 ◽  
Author(s):  
Hannan Assaf ◽  
Esidor Ntsoenzok ◽  
Marie-France Barthe ◽  
Elisa Leoni ◽  
Marie-Odile Ruault ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thermal Stability ◽  
Transmission Electron Microscopy ◽  
Positron Annihilation ◽  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Vacancy Concentration ◽  
Positron Annihilation Spectroscopy ◽  
Transmission Electron ◽  
Thermal Stability Of

AbstractThermally grown SiO2 was implanted at room temperature with 220 keV Kr in order to generate bubbles/cavities in the sample. The formation and thermal stability of these bubbles/cavities is studied in this work. Transmission Electron Microscopy (TEM), Rutherford Backscattering Spectrometry (RBS) and Positron Annihilation Spectroscopy (PAS) were used to provide a comprehensive characterisation of defects (bubbles, vacancy, Kr and other types of defects) created by Kr implantation in SiO2 layer. These measurements suggest that the bubbles observed with TEM were a consequence of the interaction between Kr and vacancies (V), with VnXem complexes created in the whole of implanted zone. After annealing, bubbles/cavities disappear from SiO2 due to the strongly desorption of Kr and the decrease in vacancy concentration.

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