Combination of CVD Diamond and DLC Film Growth with Pulsed Laser Deposition to Enhance the Corrosive Protection of Diamond Layers

2005 ◽  
Vol 473-474 ◽  
pp. 67-72
Author(s):  
Hajnalka Csorbai ◽  
Gergely Kovách ◽  
Gábor Pető ◽  
P. Csíkvári ◽  
Albert Karacs ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Diamond Films ◽  
Pulsed Laser ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Laser Deposition ◽  
Protective Properties ◽  
Dlc Film ◽  
Protective Layers

CVD diamond layers are often used as protective layers. One of the most important of these applications requires pinhole-free layers to protect against fluid materials, such as found in chemically aggressive environment. These pinholes are present even in very good quality CVD diamond films. In this work we combined the Pulsed Laser Deposition (PLD) technique with Microwave assisted Chemical Vapor Deposition (MW-CVD). We used CVD diamond films prepared under different conditions and layer thicknesses. Both of these proceses produced inperfect protective layers, but we proved that a PLD DLC film over the diamond layer does reduce the number of pinholes in the coating. We used special chemical alcaline etching to detect the remaining pinholes, and to test the corrosion protective properties of the layers. As a result we were able to prepare samples of 1 x 1cm2 with only 0.2 micron thickness without any pinholes, while in CVD diamond layers a thickness of 2,5 micron was needed for the same level of compactness.

Crystal Growth and Atomic-Level Characterization of YBa2Cu3O7–δ Epitaxial Films

MRS Bulletin ◽  
1994 ◽  
Vol 19 (9) ◽  
pp. 33-38 ◽  
Author(s):  
Masashi Kawasaki ◽  
Masashi Nantoh
Keyword(s):  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Pulsed Laser ◽  
Chemical Vapor ◽  
Functional Materials ◽  
Epitaxial Films ◽  
Laser Deposition ◽  
The Right ◽  
Deposition Techniques

Epitaxial thin-film growth of high-critical-temperature (Tc) superconductors has been intensively studied not only because it is one of the key technologies for electronic application but also because it provides suitable specimens for elucidating the superconducting mechanism. For simply making thick (>100 nm) epitaxial films, various deposition techniques such as sputtering, pulsed laser deposition (PLD), evaporation, including molecular beam epitaxy (MBE), and chemical vapor deposition (CVD) have been verified as applicable. For instance, high-quality YBa2Cu3O7–δ (YBCO) films, in terms of superconducting properties (Tc and critical current Jc), can be made by adjusting the cationic composition and choosing the right deposition conditions, e.g., oxygen pressure and temperature close to the decomposition line in the phase diagram. The knowledge and techniques accumulated in the high Tc field have been successfully transferred for the film growth of such oxides as dielectric, ferroelectric, magnetic, and optically functional materials. Pulsed laser deposition, especially, is now widely used for those materials and was addressed in a previous issue of the MRS Bulletin. However, as the demand for film quality increases, allowing films to be used in complex heterostructures like Josephson tunnel junctions and in well-designed physics studies, the meaning of the term “highquality film” has been changing.

Tracing the origin of oxygen for La0.6Sr0.4MnO3thin film growth by pulsed laser deposition

2015 ◽  
Vol 49 (4) ◽  
pp. 045201 ◽  
Author(s):  
J Chen ◽  
M Döbeli ◽  
D Stender ◽  
M M Lee ◽  
K Conder ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Pulsed Laser ◽  
Laser Deposition

Microstructure of Compositionally Graded PZT films Grown by Pulsed Laser Deposition

2008 ◽  
Vol 14 (S3) ◽  
pp. 53-56
Author(s):  
S.A.S. Rodrigues ◽  
A. Khodorov ◽  
M. Pereira ◽  
M.J.M. Gomes
Keyword(s):  
Pulsed Laser Deposition ◽  
Lead Zirconate Titanate ◽  
Film Growth ◽  
Pulsed Laser ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Laser Deposition ◽  
Composition Gradient ◽  
Complex Structures ◽  
Pzt Films

Ferroelectric films with a composition gradient have attracted much attention because of their large polarization offset present in the hysteresis loops. Lead Zirconate Titanate (PZT) films were deposited on Pt/TiO2/SiO2/Si substrates by Pulsed Laser Deposition (PLD) technique, using a Nd:YAG laser (Surelite) with a source pulse wavelength of 1064 nm and duration of 5-7 ns delivering an energy of 320 mJ per pulse and a laser fluence energy about 20 J/cm2. The film growth is performed in O2 atmosphere (0,40 mbar) while the substrate is heated at 600°C by a quartz lamp. Starting from ceramic targets based on PZT compositions and containing 5% mol. of excess of PbO to compensate the lead evaporation during heat treatment, three films with different compositions Zr/Ti 55/45, 65/35 and 92/8, and two types of complex structures were produced. These complex structures are in the case of the up-graded structure (UpG), with PZT (92/8) at the bottom, PZT (65/35) on middle and PZT (55/45) on the top, and for down-graded (DoG) one, that order is reversed.

ZnSe and ZnO film growth by pulsed-laser deposition

1998 ◽  
Vol 127-129 ◽  
pp. 496-499 ◽  
Author(s):  
Y.R. Ryu ◽  
S. Zhu ◽  
S.W. Han ◽  
H.W. White ◽  
P.F. Miceli ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Film

scholarly journals Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition

2010 ◽  
Vol 2010 ◽  
pp. 1-27 ◽  
Author(s):  
Michael Lorenz ◽  
Holger Hochmuth ◽  
Christoph Grüner ◽  
Helena Hilmer ◽  
Alexander Lajn ◽  
...  
Keyword(s):  
Thin Film ◽  
Dislocation Density ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Chemical Vapor ◽  
Laser Deposition ◽  
Oxide Thin Film ◽  
Organic Chemical ◽  
Large Area ◽  
Low Dislocation Density

Advanced Pulsed Laser Deposition (PLD) processes allow the growth of oxide thin film heterostructures on large area substrates up to 4-inch diameter, with flexible and controlled doping, low dislocation density, and abrupt interfaces. These PLD processes are discussed and their capabilities demonstrated using selected results of structural, electrical, and optical characterization of superconducting (YBa2Cu3O7−δ), semiconducting (ZnO-based), and ferroelectric (BaTiO3-based) and dielectric (wide-gap oxide) thin films and multilayers. Regarding the homogeneity on large area of structure and electrical properties, flexibility of doping, and state-of-the-art electronic and optical performance, the comparably simple PLD processes are now advantageous or at least fully competitive to Metal Organic Chemical Vapor Deposition or Molecular Beam Epitaxy. In particular, the high flexibility connected with high film quality makes PLD a more and more widespread growth technique in oxide research.

Research of anti-reflective and protective DLC Film on Si Substrate by Femto-second Pulsed Laser Deposition

2010 ◽  
Vol 22 (8) ◽  
pp. 1705-1708 ◽  
Author(s):  
王淑云 Wang Shuyun ◽  
郭延龙 Guo Yanlong ◽  
刘旭 Liu Xu ◽  
曹海源 Cao Haiyuan ◽  
王会升 Wang Huisheng ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Si Substrate ◽  
Dlc Film

Incongruent pulsed laser deposition strategy for thin film growth of Ca3Co4O9 thermoelectric compound

2019 ◽  
Vol 45 (10) ◽  
pp. 13138-13143 ◽  
Author(s):  
Haiyang Hu ◽  
Fei Shao ◽  
Jikun Chen ◽  
Max Döbeli ◽  
Qingfeng Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Pulsed Laser ◽  
Thin Film Growth ◽  
Laser Deposition

Ca2RuO4Thin Film Growth by Pulsed Laser Deposition

2004 ◽  
Vol 819 ◽  
Author(s):  
Xu Wang ◽  
Yan Xin ◽  
Hanoh Lee ◽  
Patricia A. Stampe ◽  
Robin J. Kennedy ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Electrical Transport ◽  
Film Growth ◽  
Pulsed Laser ◽  
High Sensitivity ◽  
Laser Deposition ◽  
Chemical Doping ◽  
Bulk Single Crystal ◽  
Electrical Transport Properties

AbstractBulk Ca2RuO4 is an antiferromagnetic Mott insulator with the metal-insulator transition above room temperature, and the Neel temperature at 113 K. There is strong coupling between crystal structures and magnetic, electronic phase transitions in this system. It exhibits high sensitivity to chemical doping and pressure that makes it very interesting material to study. We have epitaxially grown Ca2RuO4 thin films on LaAlO3 substrates by pulsed laser deposition technique. Growth conditions such as substrate temperature and O2 pressure were systematically varied in order to achieve high quality single-phase film. Crystalline quality and orientation of these films were characterized by X-ray diffractometry. Microstructure of the thin films was examined by transmission electron microscopy. The electrical transport properties were also measured and compared with bulk single crystal.

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