Hall Effect in the Channel of 3C-SiC MOSFETs
2005 ◽
Vol 483-485
◽
pp. 441-444
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Keyword(s):
Temperature-dependent Hall effect investigations in the channel of lateral 3C-SiC LDDMOSFETs with nitrogen(N)-implanted source/drain regions are conducted. The free electron concentration and the electron Hall mobility are independently determined. A maximum electron Hall mobility of 75 cm2/Vs is observed. The gate oxide withstands electric field strengths up to 5 MV/cm. A high density of interface states of a few 1013 cm-2eV-1 close to the 3C-SiC conduction band edge still lowers the performance of the MOS device.
2005 ◽
Vol 66
(7)
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pp. 1158-1163
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Keyword(s):
1988 ◽
Vol 3
(12)
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pp. 1203-1209
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2012 ◽
Vol 358
(3)
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pp. 711-714
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Keyword(s):
2014 ◽
Vol 252
(3)
◽
pp. 607-611
◽
Keyword(s):
Keyword(s):
2013 ◽
Vol 74
(5)
◽
pp. 746-750
◽
Keyword(s):
2017 ◽
Vol 22
(3)
◽
pp. 201-210
Keyword(s):