Instrumentation for Rocket Measurements of Free-Electron Concentration in the Ionosphere

1961 ◽  
pp. 38-56
Author(s):  
K. I. Gringauz ◽  
V. A. Rudakov ◽  
A. V. Kaporskii
Keyword(s):  
Electron Concentration ◽  
Free Electron ◽  
Free Electron Concentration ◽  
Rocket Measurements

Saturation of the free-electron concentration in delta -doped GaAs: the DX centre in two dimensions

1988 ◽  
Vol 3 (12) ◽  
pp. 1203-1209 ◽  
Author(s):  
A Zrenner ◽  
F Koch ◽  
R L Williams ◽  
R A Stradling ◽  
K Ploog ◽  
...  
Keyword(s):  
Electron Concentration ◽  
Free Electron ◽  
Two Dimensions ◽  
Free Electron Concentration

Free-electron concentration and polarity inversion domains in plasmonic (Zn,Ga)O

2014 ◽  
Vol 252 (3) ◽  
pp. 607-611 ◽  
Author(s):  
Sergey Sadofev ◽  
Sascha Kalusniak ◽  
Peter Schäfer ◽  
Holm Kirmse ◽  
Fritz Henneberger
Keyword(s):  
Electron Concentration ◽  
Free Electron ◽  
Free Electron Concentration ◽  
Polarity Inversion

Hall Effect in the Channel of 3C-SiC MOSFETs

2005 ◽  
Vol 483-485 ◽  
pp. 441-444 ◽  
Author(s):  
Michael Krieger ◽  
Gerhard Pensl ◽  
Mietek Bakowski ◽  
Adolf Schöner ◽  
Hiroyuki Nagasawa ◽  
...  
Keyword(s):  
Hall Effect ◽  
Electron Concentration ◽  
Hall Mobility ◽  
Free Electron ◽  
Gate Oxide ◽  
Conduction Band Edge ◽  
Temperature Dependent ◽  
Free Electron Concentration ◽  
Density Of Interface States ◽  
Mos Device

Temperature-dependent Hall effect investigations in the channel of lateral 3C-SiC LDDMOSFETs with nitrogen(N)-implanted source/drain regions are conducted. The free electron concentration and the electron Hall mobility are independently determined. A maximum electron Hall mobility of 75 cm2/Vs is observed. The gate oxide withstands electric field strengths up to 5 MV/cm. A high density of interface states of a few 1013 cm-2eV-1 close to the 3C-SiC conduction band edge still lowers the performance of the MOS device.

Tuning the free electron concentration in Sr-doped Bi2Se3

2013 ◽  
Vol 74 (5) ◽  
pp. 746-750 ◽  
Author(s):  
P. Ruleova ◽  
C. Drasar ◽  
A. Krejcova ◽  
L. Benes ◽  
J. Horak ◽  
...  
Keyword(s):  
Electron Concentration ◽  
Free Electron ◽  
Free Electron Concentration
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