GaAs/AlGaAs Quantum Cascade Lasers Based on Double Resonant Electron – LO Phonon Transitions

2005 ◽  
Vol 494 ◽  
pp. 25-30 ◽  
Author(s):  
A. Mirčetić ◽  
D. Indjin ◽  
V. Milanović ◽  
P. Harrison ◽  
Z. Ikonić ◽  
...  

In this paper a procedure for the global optimization of mid-infrared GaAs/AlGaAs quantum cascade lasers that relies on the method of simulated annealing is presented. We propose a double longitudinal optical phonon resonance design obtained via a ladder of three states, with subsequent pairs separated by optical phonon energy. Addition of an extra level decreases the lower laser level population by enabling an efficient extraction into the injector region. The output characteristics of the optimized structures are calculated using the full self–consistent rate equation model, which includes all of the relevant scattering mechanisms. We also presented the experimentally measured output characteristics of an initial device, which are in agreement with the numerically calculated values, confirming the good design capabilities of the applied procedure.

2009 ◽  
Vol 94 (25) ◽  
pp. 251114 ◽  
Author(s):  
Matthew D. Escarra ◽  
Anthony J. Hoffman ◽  
Kale J. Franz ◽  
Scott S. Howard ◽  
Richard Cendejas ◽  
...  

2021 ◽  
Vol 2 (2) ◽  
pp. 48-56
Author(s):  
Akram Ghani Mohammed ◽  
Hussein Hadi Waried

In this paper, a theoretical investigation of negative optoelectronic feedback study in Nano quantum cascade lasers is presented. The present rate equation model has been modified to include the nano laser factors such as the Purcell factor and the spontaneous emission factor. The results indicate that the present rate equation model can be using to study the effect of Purcell factor and the spontaneous emission factor on the negative optoelectronic feedback in Nano quantum cascade lasers. It is found that the increase in Purcell factor value leads to increase in photon number and decrease the carrier number in all quantum states. Also, the dynamic of photon number (S) tends to stable at constant value with the increase of Purcell effect i.e. there is small variation in photon number and carrier number( , , ). The decreases in enhanced spontaneous emission factor value leads to increases in carrier number and decreases the photon number and we note small variation in these values.


2011 ◽  
Vol 109 (10) ◽  
pp. 102407 ◽  
Author(s):  
F. Castellano ◽  
A. Bismuto ◽  
M. I. Amanti ◽  
R. Terazzi ◽  
M. Beck ◽  
...  

2002 ◽  
Vol 80 (23) ◽  
pp. 4303-4305 ◽  
Author(s):  
Vincenzo Spagnolo ◽  
Gaetano Scamarcio ◽  
Mariano Troccoli ◽  
Federico Capasso ◽  
Claire Gmachl ◽  
...  

Photonics ◽  
2020 ◽  
Vol 7 (1) ◽  
pp. 7 ◽  
Author(s):  
Liang Gao ◽  
John L. Reno ◽  
Sushil Kumar

Scattering due to interface-roughness (IR) and longitudinal-optical (LO) phonons are primary transport mechanisms in terahertz quantum-cascade lasers (QCLs). By choosing GaAs/Al0.10Ga0.90As heterostructures with short-barriers, the effect of IR scattering is mitigated, leading to low operating current-densities. A series of resonant-phonon terahertz QCLs developed over time, achieving some of the lowest threshold and peak current-densities among published terahertz QCLs with maximum operating temperatures above 100 K. The best result is obtained for a three-well 3.1 THz QCL with threshold and peak current-densities of 134 A/cm2 and 208 A/cm2 respectively at 53 K, and a maximum lasing temperature of 135 K. Another three-well QCL designed for broadband bidirectional operation achieved lasing in a combined frequency range of 3.1–3.7 THz operating under both positive and negative polarities, with an operating current-density range of 167–322 A/cm2 at 53 K and maximum lasing temperature of 141 K or 121 K depending on the polarity of the applied bias. By showing results from QCLs developed over a period of time, here we show conclusively that short-barrier terahertz QCLs are effective in achieving low current-density operation at the cost of a reduction in peak temperature performance.


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