Application of In Situ HREM to Study Crystallization in Materials
Keyword(s):
A review is given of the application of in situ transmission electron microscopy to study various processes associated with the crystallization of amorphous thin films. Solid phase epitaxial regrowth of ion-implanted silicon is compared with nucleation and growth in deposited thin films. The mechanism of metal-mediated crystallization is deduced directly from high resolution recordings, and the kinetics of tantalum oxide devitrefication are obtained. The advantages of direct in situ observation are described
1986 ◽
Vol 44
◽
pp. 500-501
1996 ◽
Vol 35
(Part 2, No. 4B)
◽
pp. L479-L481
◽
2019 ◽
Vol 44
(60)
◽
pp. 32112-32123
◽
1994 ◽
Vol 7
(2)
◽
pp. 27-34
Keyword(s):
2002 ◽
Vol 17
(3)
◽
pp. 550-555
◽