Corrosion of HMFG by H2O Vapor Determination of ƐOH and Diffusion Profile

1985 ◽  
Vol 5-6 ◽  
pp. 323-328 ◽  
Author(s):  
D. Trégoat ◽  
Giles Fonteneau ◽  
J. Lucas
Keyword(s):  
Diffusion Profile ◽  
And Diffusion

An Analysis of Conventional and Self-Aligned four Terminal Resistor Structures for The Determination of The Contact Resistivity from End Resistance Measurements

1986 ◽  
Vol 71 ◽  
Author(s):  
I. Suni ◽  
M. Finetti ◽  
K. Grahn
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Computer Model ◽  
Contact Resistivity ◽  
Experimental Results ◽  
The Finite Element Method ◽  
Model Based ◽  
A Value ◽  
And Diffusion

AbstractA computer model based on the finite element method has been applied to evaluate the effect of the parasitic area between contact and diffusion edges on end resistance measurements in four terminal Kelvin resistor structures. The model is then applied to Al/Ti/n+ Si contacts and a value of contact resistivity of Qc = 1.8×10−7.Ωcm2 is derived. For comparison, the use of a self-aligned structure to avoid parasitic effects is presented and the first experimental results obtained on Al/Ti/n+Si and Al/CoSi2/n+Si contacts are shown and discussed.

Experimental Determination of Statistical Properties of Two-Phase Turbulent Motion

1960 ◽  
Vol 82 (3) ◽  
pp. 609-621 ◽  
Author(s):  
S. L. Soo ◽  
H. K. Ihrig ◽  
A. F. El Kouh
Keyword(s):  
Gas Phase ◽  
Tracer Diffusion ◽  
Statistical Properties ◽  
Solid Particles ◽  
Turbulent Motion ◽  
Two Phase ◽  
Gaseous State ◽  
Diffusion Technique ◽  
And Diffusion

Experimental methods for the determination of certain statistical properties of turbulent conveyance and diffusion of solid particles in a gaseous state are presented. Methods include a tracer-diffusion technique for the determination of gas-phase turbulent motion and a photo-optical technique for the determination of motion of solid particles. Results are discussed and compared with previous analytical results.

scholarly journals DFT Study on Adsorption of Acetone and Toluene on Silicene

2020 ◽  
Vol 36 (1) ◽  
Author(s):  
Pham Trong Lam ◽  
Ta Thi Luong ◽  
Vo Van On ◽  
An Dinh Van
Keyword(s):  
Charge Transfer ◽  
Potential Energy ◽  
Potential Energy Surfaces ◽  
Adsorption Mechanism ◽  
Simulation Method ◽  
Dft Study ◽  
Gap Opening ◽  
Energy Surfaces ◽  
And Diffusion

In this work, we investigated the adsorption mechanism of acetone and toluene on the surface of silicene by the quantum simulation method. The images of the potential energy surfaces for different positions of the adsorbate on the silicene surface were explored by Computational DFT-based Nanoscope tool for determination of the most stable configurations and diffusion possibilities. The charge transfer in order of 0.2 – 0.3 electrons and the tunneling gap opening of 18 – 23 meV due to acetone and toluene, respectively, suggest that silicene is considerably sensitive with these VOCs and can be used as the material in the fabrication of reusable VOC sensors.

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