Low Temperature Deposition of HfO2 Gate Insulator on SiC by Metalorganic Chemical Vapor Deposition
2006 ◽
Vol 527-529
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pp. 1079-1082
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Keyword(s):
Low temperature deposition of HfO2 films on 4H-SiC(0001) substrates by pulse introduced metalorganic chemical vapor deposition (MOCVD) using tetrakis-diethylamido-hafnium [Hf[N(C2H5)2]4, (TDEAH)] and H2O has been investigated. HfO2 films with relatively low leakage current density of 10-4 A/cm2 were obtained even at a deposition temperature as low as 190 °C. We demonstrate that the HfO2/SiC interface, where the HfO2 was deposited at 190 °C, has lower interface state density than a typical thermally-grown SiO2/SiC interface. It is also shown by X-ray photoelectron spectroscopy (XPS) that the HfO2/SiC structure fabricated at 190 °C has lower SiOx count than the HfO2/SiC structure fabricated at 400 °C.
2006 ◽
pp. 1079-1082
1998 ◽
Vol 21
(1-4)
◽
pp. 355-366
◽
2000 ◽
Vol 39
(Part 1, No. 2A)
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pp. 572-576
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2001 ◽
Vol 40
(Part 2, No. 4A)
◽
pp. L343-L345
◽
1990 ◽
pp. 217-222