Isochronal Annealing Study of Deep Levels in Hydrogen Implanted p-Type 4H-SiC

2007 ◽  
Vol 556-557 ◽  
pp. 591-594
Author(s):  
Giovanni Alfieri ◽  
Tsunenobu Kimoto
Keyword(s):  
Deep Levels ◽  
Isochronal Annealing ◽  
Annealing Study ◽  
P Type

Isochronal annealing study of Mg-implanted p-type GaN activated by ultra-high-pressure annealing

2021 ◽  
Author(s):  
Kazufumi Hirukawa ◽  
Kensuke Sumida ◽  
Hideki Sakurai ◽  
Hajime FUJIKURA ◽  
Masahiro Horita ◽  
...  
Keyword(s):  
High Pressure ◽  
Isochronal Annealing ◽  
Ultra High Pressure ◽  
Annealing Study ◽  
P Type

scholarly journals Detection and depth analyses of deep levels generated by ion implantation in n- and p-type 4H-SiC

2009 ◽  
Vol 106 (1) ◽  
pp. 013719 ◽  
Author(s):  
Koutarou Kawahara ◽  
Giovanni Alfieri ◽  
Tsunenobu Kimoto
Keyword(s):  
Ion Implantation ◽  
Deep Levels ◽  
P Type

scholarly journals Reduction of deep levels generated by ion implantation into n- and p-type 4H–SiC

2010 ◽  
Vol 108 (3) ◽  
pp. 033706 ◽  
Author(s):  
Koutarou Kawahara ◽  
Jun Suda ◽  
Gerhard Pensl ◽  
Tsunenobu Kimoto
Keyword(s):  
Ion Implantation ◽  
Deep Levels ◽  
P Type

Thermal annealing behaviour of deep levels in as-grown p-type MOCVD GaAs

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4977-4980 ◽  
Author(s):  
Nazir A. Naz ◽  
Umar S. Qurashi ◽  
M. Zafar Iqbal
Keyword(s):  
Thermal Annealing ◽  
Deep Levels ◽  
Annealing Behaviour ◽  
P Type

Reactive-Ion-Etching Induced Deep Levels Observed in n-Type and p-Type 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 759-762
Author(s):  
Koutarou Kawahara ◽  
Giovanni Alfieri ◽  
Michael Krieger ◽  
Tsunenobu Kimoto
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Reactive Ion Etching ◽  
Deep Levels ◽  
Total Density ◽  
Ion Etching ◽  
Initial Concentration ◽  
Grown Sample ◽  
Transient Spectroscopy ◽  
P Type

In this study, deep levels are investigated, which are introduced by reactive ion etching (RIE) of n-type/p-type 4H-SiC. The capacitance of as-etched p-type SiC is remarkably small due to compensation or deactivation of acceptors. These acceptors can be recovered to the initial concentration of the as-grown sample after annealing at 1000oC. However, various kinds of defects remain at a total density of ~5× 1014 cm-3 in a surface-near region from 0.3 μm to 1.0 μm even after annealing at 1000oC. The following defects are detected by Deep Level Transient Spectroscopy (DLTS): IN2 (EC – 0.35 eV), EN (EC – 1.6 eV), IP1 (EV + 0.35 eV), IP2 (HS1: EV + 0.39 eV), IP4 (HK0: EV + 0.72 eV), IP5 (EV + 0.75 eV), IP7 (EV + 1.3 eV), and EP (EV + 1.4 eV). These defects generated by RIE can be significantly reduced by thermal oxidation and subsequent annealing at 1400oC.

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