scholarly journals A Model for Nucleation and Growth Processes of Tin Whisker

2010 ◽  
Vol 638-642 ◽  
pp. 2688-2693 ◽  
Author(s):  
Kiyomichi Nakai ◽  
Tatsuaki Sakamoto ◽  
Sengo Kobayashi ◽  
Kazuto Arakawa ◽  
Hirotaro Mori ◽  
...  

A model for the nucleation and growth processes of Sn whisker is offered. High density of localized screw dislocations by deformation form the dense spiral steps of atomic scale on Sn surface. The spiral steps would induce the nucleation of Sn whisker. Edge dislocations localized at the same region where the dense screw dislocations exist supply Sn atoms to Sn whisker through pipe diffusion. Both screw and edge dislocations would bend along almost one direction, namely, to relax the external shear stress. The image force also helps to bend the dislocations perpendicular to the whisker side-surface. The bending of dislocations at root of whisker leads the bend of whisker. The pipe diffusion of Sn atoms through edge dislocations from bulk Sn toward whisker is suppressed at the bent part of edge dislocation, resulting in release of Sn atoms inside whisker and leading to the growth of whisker near its root.

2012 ◽  
Vol 706-709 ◽  
pp. 751-756 ◽  
Author(s):  
Kiyomichi Nakai ◽  
Tatsuaki Sakamoto ◽  
Takeaki Miyamoto ◽  
Sengo Kobayashi

Effect of dislocation behavior on formation of whisker in pure Sn has been investigated. Slip system in β-Sn was determined; slip plane is , and Burgers vector b is . The magnitude of Burgers vector is larger than the smallest interatomic spacing in β-Sn. This means that there is broad space under the extra half plane of edge dislocation. It sould be noted that pipe diffusion along the edge dislocation is enhanced in β-Sn, resulting in easy supply of Sn atoms at the root of Sn whisker [1, 2]. Si-bearing particles, which precipitate on surface of bulk Sn by heat-treatment in quartz tube, suppress the accumulation of both edge and screw dislocations to same area. It is greatly effective for the suppression of the nucleation of Sn whisker.


1991 ◽  
Vol 136 (3) ◽  
pp. 181-197 ◽  
Author(s):  
J. Bartels ◽  
U. Lembke ◽  
R. Pascova ◽  
J. Schmelzer ◽  
I. Gutzow

2008 ◽  
Vol 1090 ◽  
Author(s):  
Mark E. Twigg ◽  
Yoosuf N. Picard ◽  
Nabil D. Bassim ◽  
Joshua D. Caldwell ◽  
Michael A. Mastro ◽  
...  

AbstractUsing transmission electron microscopy, we have analyzed dislocations in AlN nucleation layers and GaN films grown by metallorganic chemical vapor deposition (MOCVD) on the (0001) surface of epitaxially-grown 4H-SiC mesas with and without steps. For 4H-SiC substrates free of SiC surface steps, half-loop nucleation and glide parallel to the AlN/SiC interfacial plane play the dominant role in strain relief, with no mechanism for generating threading dislocations. In contrast, 4H-SiC mesa surfaces with steps give rise to regions of high stress at the heteroepitaxial interface, thereby providing an environment conducive to the nucleation and growth of threading dislocations, which act to accommodate misfit strain by the tilting of threading edge dislocations.


2008 ◽  
Vol 1142 ◽  
Author(s):  
Hideto Yoshida ◽  
Seiji Takeda ◽  
Tetsuya Uchiyama ◽  
Hideo Kohno ◽  
Yoshikazu Homma

ABSTRACTNucleation and growth processes of carbon nanotubes (CNTs) in iron catalyzed chemical vapor deposition (CVD) have been observed by means of in-situ environmental transmission electron microscopy. Our atomic scale observations demonstrate that solid state iron carbide (Fe3C) nanoparticles act as catalyst for the CVD growth of CNTs. Iron carbide nanoparticles are structurally fluctuated in CVD condition. Growth of CNTs can be simply explained by bulk diffusion of carbon atoms since nanoparticles are carbide.


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