Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds

2010 ◽  
Vol 645-648 ◽  
pp. 175-178 ◽  
Author(s):  
Remigijus Vasiliauskas ◽  
Maya Marinova ◽  
Mikael Syväjärvi ◽  
Alkyoni Mantzari ◽  
Ariadne Andreadou ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Carbide ◽  
Optical Microscopy ◽  
Epitaxial Growth ◽  
Structural Characterization ◽  
Transmission Electron ◽  
Cubic Silicon Carbide ◽  
Sublimation Growth

Epitaxial growth of cubic silicon carbide on 6H-SiC substrates, and 6H-SiC substrates with (111) 3C-SiC buffer layer, deposited by vapour liquid solid mechanism, was compared. The morphological details of the grown layers were studied by optical microscopy and their microstructure by transmission electron microscopy. The influence of the substrate on the nucleation of 3C-SiC, the initial homoepitaxial 6H-SiC nucleation before 3C-SiC as well as the formation of defects, are discussed.

Microstructural Characterization of Epitaxial Cubic Silicon Carbide Using Transmission Electron Microscopy

2010 ◽  
Vol 645-648 ◽  
pp. 379-382
Author(s):  
Bralee Chayasombat ◽  
Y. Kimata ◽  
T. Kato ◽  
Tomoharu Tokunaga ◽  
Katsuhiro Sasaki ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Carbide ◽  
Ion Implantation ◽  
Microstructural Characterization ◽  
Transmission Electron ◽  
Before And After ◽  
Bulge Region ◽  
Cubic Silicon Carbide

Microstructures of switch-back epitaxy cubic silicon carbide (3C-SiC) before and after Al ion implantation were investigated by transmission electron microscopy (TEM). Stacking faults aligned along the {111} were observed in 3C-SiC. A surface bulge was observed in some regions and planar defects were observed under the bulge region. After ion implantation of 3C-SiC, defects were observed to be distributed up to a depth approximately 500 nm from the surface.

Study of Triangle-Shaped Defects on Nearly On-Axis 4H-SiC Substrates

2016 ◽  
Vol 858 ◽  
pp. 225-228 ◽  
Author(s):  
Ren Wei Zhou ◽  
Xue Chao Liu ◽  
Hui Jun Guo ◽  
H.K. Kong ◽  
Er Wei Shi
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
High Resolution ◽  
Optical Microscopy ◽  
Epitaxial Growth ◽  
Surface Defects ◽  
Micro Raman Spectroscopy ◽  
Transmission Electron

Triangle-shaped defects are one of the most common surface defects on epitaxial growth of 4H-SiC epilayer on nearly on-axis SiC substrate. In this paper, we investigate the feature and structure of such defects using Nomarski optical microscopy (NOM), micro-Raman spectroscopy and high resolution transmission electron microscopy (HR-TEM). It is found that triangle-shaped defects were composed of a thick 3C-SiC polytype, as well as 4H-SiC epilayer.

Structural characterization of SmMn2GeO7 single microcrystals by electron microscopy

2005 ◽  
Vol 61 (1) ◽  
pp. 11-16 ◽  
Author(s):  
E. A. Juarez-Arellano ◽  
J. M. Ochoa ◽  
L. Bucio ◽  
J. Reyes-Gasga ◽  
E. Orozco
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Structural Characterization ◽  
Point Group ◽  
Spherical Mirror ◽  
Quaternary Compound ◽  
Cell Parameters ◽  
Transmission Electron ◽  
Electron Energy Loss

Single microcrystals of the new compound samarium dimanganese germanium oxide, SmMn2GeO7, were grown using the flux method in a double spherical mirror furnace (DSMF). The micrometric crystals were observed and chemically analysed with scanning electron microscopy (SEM) and X-ray energy dispersive spectroscopy (EDX). The structural characterization and chemical analysis of these crystals were also carried out using transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM), together with electron-energy-loss spectroscopy (EELS). We found that the new quaternary compound crystallizes in the orthorhombic system with the point group mmm (D 2h ), space group Immm (No. 71) and cell parameters a = 8.30 (10), b = 8.18 (10), c = 8.22 (10) Å and V = 558.76 Å3.

Structural Characterization of CF-PVT Grown Bulk 3C-SiC

2008 ◽  
Vol 600-603 ◽  
pp. 67-70 ◽  
Author(s):  
Alkyoni Mantzari ◽  
Frédéric Mercier ◽  
Maher Soueidan ◽  
Didier Chaussende ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Structural Properties ◽  
Structural Characterization ◽  
Stacking Faults ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transmission Electron ◽  
Continuous Feed

The aim of the present work is to study the structural properties of 3C-SiC which is grown on (0001) 6H-SiC and on (100) 3C-SiC (Hoya) seeds using the Continuous Feed Physical Vapor Transport (CF-PVT) method. Transmission Electron Microscopy (TEM) observations confirm that the overgrown layer is of the 3C-SiC polytype. In the case of the 6H-SiC substrate, microtwins (MTs), stacking faults (SFs) and dislocations (D) are observed at the substrate-overgrown interface with most of the dislocations annihilating within the first few µm from the interface. In the case of 3C-SiC crystals grown on 3C seeds, repeated SFs are formed locally and also coherent (111) twins of 3C-SiC are frequently observed near the surface. The SF density is reduced at the uppermost part of the grown material.

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