Overview of 3C-SiC Crystalline Growth

2010 ◽  
Vol 645-648 ◽  
pp. 49-54 ◽  
Author(s):  
Gabriel Ferro
Keyword(s):  
Phase Composition ◽  
Gas Phase ◽  
State Of The Art ◽  
Vapour Phase ◽  
High Quality ◽  
Bulk Growth ◽  
Continuous Feed ◽  
Vapour Phase Transport ◽  
Phase Transport ◽  
Crystalline Growth

The objective of this review is to set the present state of the art of 3C-SiC crystalline growth by emphasizing the new and promising trends related to this polytype elaboration. The need of high quality 3C seed is showed to be more important than for other polytypes, in order to avoid β→ transformation during high temperature bulk growth. The effect of various parameters, such as supersaturation, gas phase composition, strain or impurities, is discussed. Recent results obtained using vapour-liquid-solid mechanism and continuous feed vapour phase transport are bringing new insight on 3C-SiC stability and setting new standards of material quality.

Notizen: The Crystal Structure of MnIn2Se4, a Ternary Layered Semiconductor

1991 ◽  
Vol 46 (8) ◽  
pp. 1122-1124 ◽  
Author(s):  
K.-J. Range ◽  
U. Klement ◽  
G. Döll ◽  
E. Bucher ◽  
J. R. Baumann
Keyword(s):  
Crystal Structure ◽  
Single Crystals ◽  
Layered Structure ◽  
Chemical Vapour ◽  
Vapour Phase ◽  
Tetrahedral Coordination ◽  
Layered Semiconductor ◽  
Vapour Phase Transport ◽  
Phase Transport ◽  
Transport Technique

Single crystals of MnIn2Se4 have been grown by the chemical vapour phase transport technique using AlCl3 as the transporting agent. The structure was refined to R = 0.064, Rw, = 0.059 for 609 reflections. MnIn2Se4 (R 3̄m, hexagonal axes a = 4.051(1), c = 39.464(2) Å, c/a = 9.74, Z = 3) crystallizes with a nearly close-packed layered structure (sequence of the Se layers ABCA|CABC|BCAB) with Moct (= 0.56 Mn + 0.44 In) in octahedral coordination (Moct,–Se = 6 × 2.721(1) A) and Mtet (= 0.78 In + 0.22 Mn) in tetrahedral coordination (Mtet-Se = 1 × 2.527(2) and 3 × 2.593(1) Å). The overall layer sequences is ΑβΒαCyA| Cα AγBβC| BγCβAα B.

scholarly journals Enhanced detection of nitrogen dioxide via combined heating and pulsed UV operation of indium oxide nano-octahedra

2016 ◽  
Vol 7 ◽  
pp. 1507-1518 ◽  
Author(s):  
Oriol Gonzalez ◽  
Sergio Roso ◽  
Xavier Vilanova ◽  
Eduard Llobet
Keyword(s):  
Nitrogen Dioxide ◽  
Indium Oxide ◽  
Gas Sensors ◽  
Uv Light ◽  
Vapour Phase ◽  
Uv Light Irradiation ◽  
Combined Operation ◽  
Pulsed Uv Light ◽  
Vapour Phase Transport ◽  
Phase Transport

We report on the use of combined heating and pulsed UV light activation of indium oxide gas sensors for enhancing their performance in the detection of nitrogen dioxide in air. Indium oxide nano-octahedra were synthesized at high temperature (900 °C) via vapour-phase transport and screen-printed onto alumina transducers that comprised interdigitated electrodes and a heating resistor. Compared to the standard, constant temperature operation of the sensor, mild heating (e.g., 100 °C) together with pulsed UV light irradiation employing a commercially available, 325 nm UV diode (square, 1 min period, 15 mA drive current signal), results in an up to 80-fold enhancement in sensitivity to nitrogen dioxide. Furthermore, this combined operation method allows for making savings in power consumption that range from 35% to over 80%. These results are achieved by exploiting the dynamics of sensor response under pulsed UV light, which convey important information for the quantitative analysis of nitrogen dioxide.

GaAs growth by vapour phase transport

1975 ◽  
Vol 29 (2) ◽  
pp. 176-186 ◽  
Author(s):  
J.B. Loyau ◽  
M. Oberlin ◽  
A. Oberlin ◽  
L. Hollan ◽  
R. Cadoret
Keyword(s):  
Vapour Phase ◽  
Vapour Phase Transport ◽  
Phase Transport

Vapour phase transport growth and characterization of ZnO nanowires

2014 ◽  
Author(s):  
B. V. Shrisha ◽  
Shashidhar Bhat ◽  
K. Gopalakrishna Naik
Keyword(s):  
Vapour Phase ◽  
Zno Nanowires ◽  
Vapour Phase Transport ◽  
Phase Transport
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