Numerical modeling of thermal force in a plasma for test-ion transport simulation based on Monte Carlo Binary Collision Model

2012 ◽  
Vol 231 (8) ◽  
pp. 3211-3227 ◽  
Author(s):  
Yuki Homma ◽  
Akiyoshi Hatayama
Keyword(s):  
Numerical Modeling ◽  
Monte Carlo ◽  
Ion Transport ◽  
Binary Collision ◽  
Collision Model ◽  
Transport Simulation ◽  
Simulation Based

A Monte Carlo Binary Collision Model for  BF 2 Implants into (100) Single‐Crystal Silicon

1996 ◽  
Vol 143 (11) ◽  
pp. 3784-3790 ◽  
Author(s):  
S.‐H. Yang ◽  
C. M. Snell ◽  
S. J. Morris ◽  
S. Tian ◽  
K. Parab ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Binary Collision ◽  
Crystal Silicon ◽  
Collision Model

Modeling of Impurity Classical/Neoclassical Transport by Monte-Carlo Binary Collision Model

2013 ◽  
Vol 63 (1T) ◽  
pp. 352-354 ◽  
Author(s):  
Y. Sawada ◽  
M. Toma ◽  
Y. Homma ◽  
W. Sato ◽  
T. Furuta ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Binary Collision ◽  
Collision Model ◽  
Neoclassical Transport

Hydrodynamic hot-electron transport simulation based on the Monte Carlo method

1989 ◽  
Vol 32 (12) ◽  
pp. 1347-1351 ◽  
Author(s):  
D.L. Woolard ◽  
J-L. Pelouard ◽  
R.J. Trew ◽  
M.A. Littlejohn ◽  
C.T. Kelley
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Method ◽  
Hot Electron ◽  
Transport Simulation ◽  
The Monte Carlo Method ◽  
Simulation Based ◽  
Hot Electron Transport

2D Simulation of under-Mask Penetration in 4H-SiC Implanted with Al+ Ions

2011 ◽  
Vol 679-680 ◽  
pp. 421-424 ◽  
Author(s):  
Giorgio Lulli ◽  
Roberta Nipoti
Keyword(s):  
Computer Simulation ◽  
Monte Carlo ◽  
Binary Collision ◽  
Binary Collision Approximation ◽  
2D Simulation ◽  
Simulation Based ◽  
Sio2 Mask ◽  
Sic Wafer ◽  
Collision Approximation ◽  
Peak Value

In this work under-mask penetration of Al+ ions implanted in 4H-SiC is investigated by computer simulation based on the Monte-Carlo binary collision approximation (MC–BCA). Results indicate that a small fraction of ions, implanted normal to a (0001) 4H-SiC wafer (8° off-axis towards the {11-20}), is scattered and become channeled in the <1120> directions perpendicular to the <0001> axis. Due to this phenomenon, doped regions with concentration ≤ 10− 4 of the peak value, may extend laterally for a few µm below the edge of a SiO2 mask.

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