The Monte Carlo Binary Collision Approximation Applied to the Simulation of the Ion Implantation Process in Single Crystal SiC: High Dose Effects

2001 ◽  
Vol 353-356 ◽  
pp. 599-602 ◽  
Author(s):  
Giorgio Lulli ◽  
E. Albertazzi ◽  
Roberta Nipoti ◽  
Marco Bianconi ◽  
A. Carnera
Keyword(s):  
Monte Carlo ◽  
Ion Implantation ◽  
Single Crystal ◽  
Binary Collision ◽  
High Dose ◽  
Binary Collision Approximation ◽  
Dose Effects ◽  
Single Crystal Sic ◽  
Implantation Process ◽  
Collision Approximation

2D Simulation of under-Mask Penetration in 4H-SiC Implanted with Al+ Ions

2011 ◽  
Vol 679-680 ◽  
pp. 421-424 ◽  
Author(s):  
Giorgio Lulli ◽  
Roberta Nipoti
Keyword(s):  
Computer Simulation ◽  
Monte Carlo ◽  
Binary Collision ◽  
Binary Collision Approximation ◽  
2D Simulation ◽  
Simulation Based ◽  
Sio2 Mask ◽  
Sic Wafer ◽  
Collision Approximation ◽  
Peak Value

In this work under-mask penetration of Al+ ions implanted in 4H-SiC is investigated by computer simulation based on the Monte-Carlo binary collision approximation (MC–BCA). Results indicate that a small fraction of ions, implanted normal to a (0001) 4H-SiC wafer (8° off-axis towards the {11-20}), is scattered and become channeled in the <1120> directions perpendicular to the <0001> axis. Due to this phenomenon, doped regions with concentration ≤ 10− 4 of the peak value, may extend laterally for a few µm below the edge of a SiO2 mask.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Binary Collision Approximation

2020 ◽  
pp. 595-619 ◽  
Author(s):  
Christophe J. Ortiz ◽  
Laurence Luneville ◽  
David Simeone
Keyword(s):  
Binary Collision ◽  
Binary Collision Approximation ◽  
Collision Approximation

Phase shift of solitary wave in a one-dimensional granular chain

2019 ◽  
Vol 33 (10) ◽  
pp. 1950085
Author(s):  
Xian-Qing Yang ◽  
Yao Yang ◽  
Yang Jiao ◽  
Wei Zhang
Keyword(s):  
Phase Shift ◽  
Solitary Wave ◽  
Numerical Scheme ◽  
Binary Collision ◽  
One Dimensional ◽  
Binary Collision Approximation ◽  
Fifth Order ◽  
The Waves ◽  
Theoretical Results ◽  
Collision Approximation

In this paper, both the fifth-order Runge–Kutta numerical scheme and binary collision approximation are used to study the phase shift. Both numerical and theoretical results are shown that the solitary wave after head-on collision propagates along the chain behind the reference wave in both even and odd numbers of grain chains. It is the well-known feature of the appearance of the phase shift. Those results are in agreement with the experimental results. Furthermore, it is found that the phase shift is not only related to the collision position of the waves, but also to the position where the time is measured. The value of phase shift increases nonmonotonously with increasing the velocity of the opposite propagation of the wave. Binary collision approximation is applied to analyze the phase shift, and it is found that theoretical results agree well with numerical results, especially in the case of phase shift in odd chain.

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