Effect of Nitrogen Doping on the Growth of 4H Polytype on the 6H-SiC Seed by PVT Method
2012 ◽
Vol 717-720
◽
pp. 29-32
◽
Keyword(s):
In this work results of nitrogen doping in the amount of 0 vol.%, 3 vol.% and 10 vol.% on the growth of the 4H polytype on the 6H-SiC seed are presented. SiC crystals grown by PVT method on the (000-1) C-face of 6H seeds using the open seed backside design have been investigated. Structural and electrical properties of the crystals were studied by different experimental methods.
2011 ◽
Vol 3
(10)
◽
pp. 1-4
◽
2018 ◽
pp. 168
2004 ◽
Vol 7
(2)
◽
pp. 363-367
◽