Fabrication and study the effect of the laser on the properties of the compound Tl2-xHgxBa2-ySryCa2Cu3O10+δ superconductor

2018 ◽  
pp. 168
Author(s):  
A. Kareem Dahash Ali ◽  
Nihad Ali Shafeek
Keyword(s):  
Transition Temperature ◽  
Solid State ◽  
Hydrostatic Pressure ◽  
Electrical Properties ◽  
Co2 Laser ◽  
Temperature Shift ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Electrical Properties

This study included the fabrication of    compound (Tl2-xHgxBa2-ySryCa2Cu3O10+δ) in a manner solid state and under hydrostatic pressure ( 8 ton/cm2) and temperature annealing(850°C), and determine the effect of the laser on the structural and electrical properties elements in the compound, and various concentrations of x where (x= 0.1,0.2,0.3 ). Observed by testing the XRD The best ratio of compensation for x is 0.2 as the value of a = b = 5.3899 (A °), c = 36.21 (A °) show that the installation of four-wheel-based type and that the best temperature shift is TC= 142 K  .When you shine a CO2 laser on the models in order to recognize the effect of the laser on these models showed the study of X-ray diffraction of these samples when preparing models with different concentrations of the values ​​of x, the best ratio of compensation is 0.2 which showed an increase in the values ​​of the dimensions of the unit cell a=b = 5.3929 (A °), c = 36.238 (A°). And the best transition temperature after shedding laser is TC=144 K. 

Structural and Electrical Properties of Colossal Magnetoresistive LSMO Thin Films Prepared by KrF Laser Ablation Method

2001 ◽  
Vol 666 ◽  
Author(s):  
Fumiaki Mitsugi ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara ◽  
Jagdish Narayan ◽  
Alexander M. Grishin
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Electrical Properties ◽  
Lattice Mismatch ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
X Ray ◽  
Colossal Magnetoresistive ◽  
Laser Ablation Method ◽  
Structural And Electrical Properties

ABSTRACTWe prepared colossal magnetoresistive La0.8Sr0.2MnO3 thin films on the MgO, SrTiO3 and LaAlO3 single crystal substrates using KrF excimer pulsed laser ablation technique. The structural and electrical properties of the La0.8Sr0.2MnO3 thin films which were strained by the lattice mismatch are reported. The in-plane lattice mismatch between the La0.8Sr0.2MnO3 and MgO, SrTiO3 and LaAlO3 substrates are -7.8 %, -0.5 % and +2.3 %, respectively. The X-ray diffraction spectra of the films exhibited c-axis orientation. In the case of the La0.8Sr0.2MnO3 / LaAlO3 thin films with thickness over 100 nm, the divided (00l) peaks were observed. The surface morphology and transport property of the strongly stressed La0.8Sr0.2MnO3 / LaAlO3 were different from those of La0.8Sr0.2MnO3 / MgO and La0.8Sr0.2MnO3 / SrTiO3thin films.

Notizen: Solid State Structure of N,N-Dibenzylhydroxylamine

1995 ◽  
Vol 50 (4) ◽  
pp. 699-701 ◽  
Author(s):  
Norbert W. Mitzel ◽  
Jürgen Riede ◽  
Klaus Angermaier ◽  
Hubert Schmidbaur
Keyword(s):  
Solid State ◽  
Hydrogen Bonds ◽  
Single Crystal ◽  
Unit Cell ◽  
Monoclinic Space Group ◽  
State Structure ◽  
X Ray Diffraction ◽  
Space Group ◽  
Solid State Structure ◽  
X Ray

The solid-state structure of N,N-dibenzylhydroxylamine (1) has been determined by single crystal X-ray diffraction. The compound crystallizes in the monoclinic space group P 21/n with four formula units in the unit cell. N,N-dibenzylhydroxylamine dimerizes to give N2O2H2 sixmembered rings as a result of the formation of two hydrogen bonds O - H ··· N in the solid state.

Structural and electrical properties of Cu-doped Ni–Zn nanocrystalline ferrites for MLCI applications

2017 ◽  
Vol 31 (33) ◽  
pp. 1750318 ◽  
Author(s):  
D. Venkatesh ◽  
K. V. Ramesh
Keyword(s):  
Electrical Properties ◽  
Cation Distribution ◽  
Tetrahedral Site ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Sem Images ◽  
X Ray ◽  
Structural And Electrical Properties ◽  
Phase Spinel ◽  
Diffraction Patterns

Polycrystalline Cu substituted Ni–Zn ferrites with chemical composition Ni[Formula: see text]Zn[Formula: see text]-Cu[Formula: see text]Fe2O4 (x = 0.00 to 0.25 in steps of 0.05) have been prepared by citrate gel autocombustion method. The samples for electrical properties have been sintered at 900[Formula: see text]C for 4 h. The X-ray diffraction patterns of all samples indicate the formation of single phase spinel cubic structure. The value of lattice parameter is decreases with increasing Cu concentration. The estimated cation distribution can be derived from X-ray diffraction intensity calculations and IR spectra. The tetrahedral and octahedral bond lengths, bond angles, cation–cation and cation–anion distances were calculated by using experimental lattice parameter and oxygen positional parameters. It is observed that Cu ions are distributed in octahedral site and subsequently Ni and Fe ions in tetrahedral site. The grain size of all samples has been calculated by Scanning Electron Microscopy (SEM) images. The variations in DC electrical resistivity and dielectric constant have been explained on the basis of proposed cation distribution.

Superconducting Compound Hg0.8Sb0.2Ba2Ca2Cu3O8+δ Compared with Hg0.8Sb0.2Ba2Ca1Cu2O6+δ to Evaluate Transition Temperature

2020 ◽  
Vol 18 (11) ◽  
pp. 14-18
Author(s):  
Abbas K. Saadon ◽  
Kareem A. Jasim ◽  
Auday H. Shaban
Keyword(s):  
High Temperature ◽  
Transition Temperature ◽  
Solid State ◽  
Solid State Reaction ◽  
Hot Spot ◽  
Solid State Reaction Method ◽  
X Ray Diffraction ◽  
Reaction Method ◽  
X Ray ◽  
Superconducting Compound

The high temperature superconductor’s compounds are one of the hot spot field of science, due to their applications in industries. Hg0.8Sb0.2Ba2Ca2Cu3O8+δ and Hg0.8Sb0.2Ba2Ca1Cu2O6+δ, were manufactured using a doable-step of solid state reaction method. The samples were sintered at 800 ° C. The transition temperatures Tc are found from electrically resistively by using four probe techniques. The resistivity become zero when the transition temperature Tc(offset) have 131 and 119 K, and the onset temperature Tc(onset) have 139 K for Hg0.8Sb0.2Ba2Ca2Cu3O8+δ and 132 K for Hg0.8Sb0.2Ba2Ca1Cu2O6+δ. Analysis of X-ray diffraction showed a tetragonal structure with lattice parameters changes for all samples.

Non-Stoichiometry and Structure of SrCe1-xYbxO3 Perovskite-Type Oxides

1996 ◽  
Vol 453 ◽  
Author(s):  
Igor Kosacki ◽  
Mark Shumsky ◽  
Harlan U. Anderson
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Charge Carrier ◽  
Structural Properties ◽  
Electrical Transport ◽  
Structural Disorder ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Electrical Properties ◽  
Perovskite Type

AbstractThe structural and electrical properties of SrCe1-xYbxO3 ceramics have been studied as a function of temperature and Yb-concentration using x-ray diffraction and impedance techniques. The influence of Yb-dopants on electrical transport and structural disorder has been studied. A correlation between the structural properties, electrical conductivity is observed and discussed. These measurements allow us to determine the mechanism of charge carrier compensation and also the concentration and mobility of the electrical species.

Effect of La doping on the structural and electrical properties of SrBi2Ta2O9

2004 ◽  
Vol 811 ◽  
Author(s):  
Ortega Nora ◽  
S. Bhattacharyya ◽  
P. Bhattacharya ◽  
R.R. Das ◽  
R.S. Katiyar
Keyword(s):  
Electrical Properties ◽  
Structural Evolution ◽  
Phase Segregation ◽  
X Ray Diffraction ◽  
Lanthanum Doping ◽  
X Ray ◽  
La Doping ◽  
Structural And Electrical Properties ◽  
Vibrational Characteristics ◽  
La Substitution

ABSTRACTThe effect of anthanum substitution (0-20%) on phase formation, structural evolution and electrical properties of SrBi2Ta2O9 (SBT) ceramics were investigated. X-ray diffraction studies revealed that phase pure SBT bulk samples can be synthesized with lanthanum doping without any phase segregation. Raman spectroscopy was used to understand the lattice vibrational characteristics of La substituted SBT compound. The ferroelectric soft mode at 27 cm−1 was shifted towards the lower frequencies at room temperature with increase in La concentrations. The octahedral stretching mode (O-Ta-O) did not influenced by La substitution in SBT. The x-ray photoemission spectroscopy measurements showed the decrease of binding energy of Bi 4f core levels (5/2 and 7/2) upon La substitution in SBT. The dielectric constant was increased from 120 to 190 up to 10% La doping and decreased with further increase in La concentration.

High-temperature powder x-ray diffraction of yttria to melting point

1999 ◽  
Vol 14 (2) ◽  
pp. 456-459 ◽  
Author(s):  
V. Swamy ◽  
N. A. Dubrovinskaya ◽  
L. S. Dubrovinsky
Keyword(s):  
High Temperature ◽  
Solid State ◽  
Melting Point ◽  
Unit Cell Parameter ◽  
Cell Parameter ◽  
Unit Cell ◽  
Diffraction Spectrum ◽  
X Ray Diffraction ◽  
Thermal Expansion Data ◽  
X Ray

Powder x-ray diffraction data of yttria (Y2O3) were obtained from room temperature to melting point with the thin wire resistance heating technique. A solid-state phase transition was observed at 2512 ± 25 K and melting of the high-uemperature phase at 2705 ± 25 K. Thermal expansion data for α–Y2O3 (C-type) are given for the range 298–2540 K. The unit cell parameter increases nonlinearly, especially just before the solid-state transition. The x-ray diffraction spectrum of the high-temperature phase is consistent with the fluorite-type structure (space group Fm3) with a refined unit cell parameter a = 5.3903(6) Å at 2530 K. The sample recrystallized rapidly above 2540 K, and above 2730 K, all the diffraction lines and spots disappeared from the x-ray diffraction spectrum that suggests complete melting.

Electrical Properties of Modified BNT Based Lead-Free Ceramics

2016 ◽  
Vol 872 ◽  
pp. 87-91
Author(s):  
Supalak Manotham ◽  
Tawee Tunkasiri ◽  
Pharatree Jaita ◽  
Pichitchai Butnoi ◽  
Denis Russell Sweatman ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Solid State ◽  
Electrical Properties ◽  
Sintering Temperature ◽  
Ferroelectric Properties ◽  
Lead Free ◽  
Second Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lead Free Ceramics

The properties of modified Bi0.5Na0.5TiO3 (BNT) based lead-free ceramics were investigated. The BNT-based ceramics were prepared by a solid-state mixed oxide method Phase formation was determined by X-ray diffraction technique (XRD). The X-ray diffraction analysis of the ceramics suggested that all samples exhibited a perovskite structure without second phase. The value of dielectric constant increased with increasing in sintering temperature. Moreover, high sintering temperatures could improve ferroelectric properties of BNT base lead-free ceramics.

STRUCTURAL AND ELECTRICAL PROPERTIES OF Nb5+ SUBSTITUTED PZT CERAMICS

2005 ◽  
Vol 19 (30) ◽  
pp. 1783-1791 ◽  
Author(s):  
O. P. THAKUR ◽  
CHANDRA PRAKASH
Keyword(s):  
Grain Size ◽  
Transition Temperature ◽  
Electrical Properties ◽  
Raw Materials ◽  
Pzt Ceramics ◽  
X Ray ◽  
Niobium Doping ◽  
Average Grain Size ◽  
Structural And Electrical Properties ◽  
Sample Structure

The effect of niobium doping on the structure and electrical properties with the following compositions Pb ( Zr 0.52 Ti 0.48)1-5X/4 Nb X O 3 with 0<x<0.025 was investigated. The materials were prepared by the usual ceramic technique using high purity raw materials. Disc-shaped samples of each compositions were sintered at 1250°C for 3 hours. The sample structure was determined by X-ray diffractometry. The average grain size, the maximum dielectric permittivity and the remnant polarization first increases up to x = 0.005 concentration of Nb 5+ and then decreases with higher concentration of niobium, while the coercive field does not show any variation. The transition temperature decreases with the increase in niobium concentration.

GaZnO as a Transparent Electrode to Silicon Carbide

2012 ◽  
Vol 717-720 ◽  
pp. 849-852
Author(s):  
Jung Ho Lee ◽  
Ji Hong Kim ◽  
Kang Min Do ◽  
Byung Moo Moon ◽  
Sung Jae Joo ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Hall Effect Measurement ◽  
Transparent Electrode ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Structural And Electrical Properties ◽  
Substrate Temperature Increase ◽  
Substrate Temperatures

The characteristics of Ga-doped zinc oxide (GaZnO) thin films deposited at different substrate temperatures (TS~250 to 550oC) on 4H-SiC have been investigated. Structural and electrical properties of GaZnO thin film on n-type 4H-SiC (100)were investigated by using x-ray diffraction, atomic force microscopy (AFM), Hall effect measurement, and Auger electron spectroscopy (AES). Hall mobility is found to increase as the substrate temperature increase from 250 to 550 oC, whereas the lowest resistivity (~3.3 x 10-4 Ωcm) and highest carrier concentration (~1.33x1021cm-3) values are observed for the GaZnO films deposited at 400 oC. It has been found that the c-axis oriented crystalline quality as well as the relative amount of activated Ga3+ Introduction ions may affect the electrical properties of GaZnO films on SiC.

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