Optical Characterization of p-Type 4H-SiC Epilayers
2015 ◽
Vol 821-823
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pp. 249-252
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Keyword(s):
A series of aluminium doped (from 2×1016to 8×1019cm-3) 4H-SiC epitaxial layers were mainly studied by Low Temperature Photoluminescence and time-resolved optical pump-probe techniques to determine the concentration of aluminium, its activation ratio, the doping related carrier lifetime, hole mobility and excess carrier diffusion length.
2013 ◽
Vol 740-742
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pp. 401-404
Keyword(s):
Keyword(s):
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2000 ◽
Vol 180
(1)
◽
pp. 195-199
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Keyword(s):
2018 ◽
Vol 4
(1)
◽
pp. 19
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Keyword(s):
2020 ◽
Vol 167
◽
pp. 105844