Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings
2014 ◽
Vol 778-780
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pp. 1089-1095
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Keyword(s):
Advanced high-voltage (≥10 kV) silicon carbide (SiC) devices described in this paper have the potential to significantly impact the system size, weight, high-temperature reliability, and cost of modern variable-speed medium-voltage (MV) systems such as variable speed (VSD) drives for electric motors, integration of renewable energy including energy storage, micro-grids, traction control, and compact pulsed power systems. In this paper, we review the current status of the development of 10 kV-20 kV class power devices in SiC, including MOSFETs, JBS diodes, IGBTs, GTO thyristors, and PiN diodes at Cree. Advantages and weakness of each device are discussed and compared. A strategy for high-voltage SiC power device development is proposed.
2017 ◽
Vol 7
(3)
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pp. 1605-1610
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1981 ◽
Vol 14
(7)
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pp. 798-799
Keyword(s):
2014 ◽
Vol 32
(2)
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pp. 197-204
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Keyword(s):
2014 ◽
Vol 32
(4)
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pp. 531-535
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