Influence of Annealing, Oxidation and Doping on Conduction-Band near Interface Traps in 4H-SiC Characterized by Low Temperature Conductance Measurements

2015 ◽  
Vol 821-823 ◽  
pp. 476-479
Author(s):  
Stefan Noll ◽  
Martin Rambach ◽  
Michael Grieb ◽  
Dick Scholten ◽  
Anton J. Bauer ◽  
...  
Keyword(s):  
Low Temperature ◽  
Conduction Band ◽  
Nitrogen Doping ◽  
Interface Traps ◽  
Channel Mobility ◽  
High Frequencies ◽  
Inversion Channel ◽  
Very High Frequencies ◽  
Post Implantation ◽  
Very High

Current power MOSFET devices on Silicon Carbide show a limited inversion channel mobility, which can be a result of the expected very high density of interface states near the conduction band . In the current work, the effect of the post implantation annealing temperature, the thermal oxidation and the nitrogen doping of the n-epi layer on the density of these interface traps is investigated using capacity-conductance measurements. Instead of the usage of very high frequencies as used in , in this investigation the measurements were performed in liquid nitrogen to decrease the recharging times of the interface traps.Due to the different processing the samples showed a wide spreading of the inversion channel mobility. The conductance measurements show a characteristic peak caused by the conduction band near interface traps especially for the low temperature measurements. But these traps could not be correlated to the mobility. Instead, a correlation to the nitrogen doping of the epi layer could be observed.

Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs

2002 ◽  
Vol 389-393 ◽  
pp. 1045-1048 ◽  
Author(s):  
Seiji Suzuki ◽  
Shinsuke Harada ◽  
Ryouji Kosugi ◽  
Junji Senzaki ◽  
Kenji Fukuda
Keyword(s):  
Conduction Band ◽  
Interface Traps ◽  
Channel Mobility ◽  
Inversion Channel

SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps

2007 ◽  
Vol 556-557 ◽  
pp. 835-838 ◽  
Author(s):  
Amador Pérez-Tomás ◽  
Michael R. Jennings ◽  
Philip A. Mawby ◽  
James A. Covington ◽  
Phillippe Godignon ◽  
...  
Keyword(s):  
Degradation Mechanism ◽  
Mobility Model ◽  
Effect Of Temperature ◽  
Coulomb Scattering ◽  
Interface Traps ◽  
Channel Mobility ◽  
Inversion Channel ◽  
Scattering Effects ◽  
Charge Concentration ◽  
Substrate Doping

In prior work we have proposed a mobility model for describing the mobility degradation observed in SiC MOSFET devices, suitable for being implemented into a commercial simulator, including Coulomb scattering effects at interface traps. In this paper, the effect of temperature and doping on the channel mobility has been modelled. The computation results suggest that the Coulomb scattering at charged interface traps is the dominant degradation mechanism. Simulations also show that a temperature increase implies an improvement in field-effect mobility since the inversion channel concentration increases and the trapped charge is reduced due to bandgap narrowing. In contrast, increasing the substrate impurity concentration further degrades the fieldeffect mobility since the inversion charge concentration decreases for a given gate bias. We have good agreement between the computational results and experimental mobility measurements.

An ammeter for very high frequencies

1930 ◽  
Vol 68 (401) ◽  
pp. 556-559
Author(s):  
C.L. Fortescue ◽  
L.A. Moxon
Keyword(s):  
High Frequencies ◽  
Very High Frequencies ◽  
Very High

scholarly journals Idiotypic analysis of potential and available repertoires in the arsonate system.

1984 ◽  
Vol 160 (1) ◽  
pp. 1-11 ◽  
Author(s):  
M Slaoui ◽  
O Leo ◽  
J Marvel ◽  
M Moser ◽  
J Hiernaux ◽  
...  
Keyword(s):  
Monoclonal Antibody ◽  
B Cells ◽  
Keyhole Limpet Hemocyanin ◽  
High Frequencies ◽  
Specific Subset ◽  
A Minor ◽  
Very High Frequencies ◽  
Very High ◽  
Limiting Dilution

We have shown that, by suitable idiotypic manipulation, BALB/c mice can express the major cross-reactive idiotype (CRI) of A/J mice in response to azophenylarsonate (Ars). In order to know if the CRIA idiotype is present in the potential repertoire of BALB/c before any intentional selection, we used polyclonal activation in vitro and limiting dilution analysis. The readout was done with two monoclonal anti-CRIA antibodies that recognize distinct idiotopes on a CRIA+ A/J germline-encoded monoclonal antibody. We studied the frequency of CRIA+ lipopolysaccharide (LPS)-reactive cells in the spleens of nonimmune and immune A/J mice and in the spleens of naive and manipulated (i.e., producing CRIA+ antibodies) BALB/c mice. A/J and BALB/c naive individuals presented very high frequencies of Ars-specific B cells while the frequency of CRIA+ B cells was only a minor subset (0.5%) of the total Ars-specific subset in the two strains. When A/J mice were immunized with Ars-keyhole limpet hemocyanin, a clear preferential expansion of the CRIA+ minor subset of A/J mice was observed (100x). No such enhancement was observed in BALB/c mice similarly treated. Manipulated BALB/c mice presented a higher frequency of CRIA+ anti-Ars B cells than naive or antigen-immunized BALB/c individuals.

A Genetically Marked I Element in Drosophila melanogaster Can Be Mobilized When ORF2 Is Provided in trans

Genetics ◽  
1998 ◽  
Vol 148 (1) ◽  
pp. 267-275
Author(s):  
Isabelle Busseau ◽  
Sophie Malinsky ◽  
Maria Balakireva ◽  
Marie-Christine Chaboissier ◽  
Danielle Teninges ◽  
...  
Keyword(s):  
Drosophila Melanogaster ◽  
Heat Shock ◽  
Reverse Transcriptase ◽  
Germ Line ◽  
Ltr Retrotransposons ◽  
Low Frequencies ◽  
High Frequencies ◽  
In Trans ◽  
Very High Frequencies ◽  
Very High

Abstract I factors in Drosophila melanogaster are non-LTR retrotransposons similar to mammalian LINEs. They transpose at very high frequencies in the germ line of SF females resulting from crosses between reactive females, devoid of active I factors, and inducer males, containing active I factors. The vermilion marked IviP2 element was designed to allow easy phenotypical screening for retrotransposition events. It is deleted in ORF2 and therefore cannot produce reverse transcriptase. IviP2 can be mobilized at very low frequencies by actively transposing I factors in the germ line of SF females. This paper shows that IviP2 can be mobilized more efficiently in the germ line of strongly reactive females in the absence of active I factors, when it is trans-complemented by the product of ORF2 synthesized from the hsp70 heat-shock promoter. This represents a promising step toward the use of marked I elements to study retrotransposition and as tools for mutagenesis.

scholarly journals Field Measurements of Dielectric Absorption in Antarctic Ice and Snow at Very High Frequencies

1968 ◽  
Vol 7 (49) ◽  
pp. 89-94 ◽  
Author(s):  
M. E. R. Walford
Keyword(s):  
Impurity Content ◽  
Field Measurements ◽  
Relaxation Mechanism ◽  
Absorption Bands ◽  
High Frequencies ◽  
Dielectric Absorption ◽  
Antarctic Snow ◽  
Radio Frequencies ◽  
Very High Frequencies ◽  
Very High

AbstractField measurements are presented of dielectric absorption in Antarctic snow and ice at frequencies of a few hundred megahertz. They are compared with measurements by other authors at very high frequencies. The dielectric absorption in ice at these frequencies is accounted for in terms of absorption bands both at radio frequencies and in the infrared. Bands at radio frequencies are caused by a relaxation mechanism which depends upon the temperature and the impurity content of the ice. These two factors are therefore included in an account of the dielectric absorption in ice at very high frequencies.

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