4H-SiC P+N UV Photodiodes for Space Applications

2015 ◽  
Vol 821-823 ◽  
pp. 644-647 ◽  
Author(s):  
B. Berenguier ◽  
Laurent Ottaviani ◽  
Stéphane Biondo ◽  
Mihai Lazar ◽  
Frédéric Milesi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Spectral Sensitivity ◽  
Hysteresis Effect ◽  
General Increase ◽  
Incident Wavelength ◽  
Space Applications ◽  
Boron Doped ◽  
Plasma Immersion Ion Implantation

Spectral sensitivity measurements versus temperature have been carried out on irradiated SiC p+n photodiodes, fabricated using two different doping processes: Aluminium standard implantation and Boron plasma immersion ion implantation. The spectral sensitivity of Al doped photodiodes increase for incident wavelength higher than 270 nm, and are very stable below. Boron doped irradiated photodiodes show a general increase of the photoresponse for all wavelengths. In both cases, an hysteresis effect is observable when with the temperature. Results are presented and discussed.

scholarly journals Treatment of polymers by plasma immersion ion implantation for space applications

2004 ◽  
Vol 186 (1-2) ◽  
pp. 234-238 ◽  
Author(s):  
I.H Tan ◽  
M Ueda ◽  
R.S Dallaqua ◽  
J.O Rossi ◽  
A.F Beloto ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Space Applications ◽  
Plasma Immersion Ion Implantation

4H-SiC P+N UV Photodiodes: Influence of Temperature and Irradiation

2014 ◽  
Vol 1693 ◽  
Author(s):  
B. Bérenguier ◽  
L. Ottaviani ◽  
S. Biondo ◽  
O. Palais ◽  
M. Lazar ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Ion Implantation ◽  
Spectral Sensitivity ◽  
Room Temperature ◽  
Charge Trapping ◽  
Hysteresis Effect ◽  
Harsh Environments ◽  
Experimental Room ◽  
Influence Of Temperature

ABSTRACT4H-SiC p+n photodiodes based on ultrathin-junctions have been fabricated with distinct processes for the p+-region creation: either with Aluminium conventional ion implantation, or with Boron Plasma Ion Immersion Implantation. Spectral sensitivity measurements were performed at several temperatures from room temperature up to 340°C, with incident wavelengths ranging from 200 to 400 nm. Both responses are characterized by a stability between 200 and 270 nm, and a important increase with temperature between 270 and 380 nm. This fact has to be related to the two different kinds of optical absorption phenomena in SiC with respect to the wavelength, which are direct and indirect (phonon assisted) transitions. When decreasing the temperature, we noticed a hysteresis effect, which could be due to charge trapping by temperature activated defects. After strong proton and electron irradiations, the diodes showed a stability of the response below 270 nm, making them suitable for use in harsh environments. Simulation was performed at room temperature, with a good correlation between simulated and experimental room temperature curves.

TiN/ZrO2 multilayers synthesized on GCr15 bearing steel using plasma immersion ion implantation and deposition

2007 ◽  
Vol 201 (15) ◽  
pp. 6615-6618 ◽  
Author(s):  
Tao Sun ◽  
Langping Wang ◽  
Yonghao Yu ◽  
Yuhang Wang ◽  
Xiaofeng Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Bearing Steel ◽  
Gcr15 Bearing Steel ◽  
Plasma Immersion Ion Implantation

A hard-tube pulser of 60 kV, 10 A for experiment and modeling in plasma immersion ion implantation

2000 ◽  
Vol 28 (5) ◽  
pp. 1392-1396 ◽  
Author(s):  
J.O. Rossi ◽  
M. Ueda ◽  
J.J. Barroso ◽  
V.A. Spassov
Keyword(s):  
Ion Implantation ◽  
Plasma Immersion Ion Implantation
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