scholarly journals The effect of plasma immersion ion implantation of Ne+ or Ar+ or Kr+ on the forming voltage of the resistive switching in the structure Ni/Pt/HfO2(10nm)/TaN(5nm)/TiN

2020 ◽  
Vol 1695 ◽  
pp. 012009
Author(s):  
O O Permyakova ◽  
A V Miakonkikh ◽  
K V Rudenko ◽  
A E Rogozhin
2007 ◽  
Vol 201 (15) ◽  
pp. 6615-6618 ◽  
Author(s):  
Tao Sun ◽  
Langping Wang ◽  
Yonghao Yu ◽  
Yuhang Wang ◽  
Xiaofeng Wang ◽  
...  

2000 ◽  
Vol 28 (5) ◽  
pp. 1392-1396 ◽  
Author(s):  
J.O. Rossi ◽  
M. Ueda ◽  
J.J. Barroso ◽  
V.A. Spassov

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