Hot Filament CVD Growth of 4H-SiC Epitaxial Layers

Hot filament CVD (HFCVD) growth of undoped 4H-SiC epitaxial layers on 100 mm n-type 4o-off 4H-SiC substrates is presented as an alternate growth method for the first time. High quality crystalline material with a low density of polytype inclusions has been demonstrated and characterized with optical micrographs, SEM imaging, micro-Raman measurements, and high resolution XRD. Typical growth rates are ~3 μm/hour. Double rocking omega scans revealed diffraction peaks with a FWHM of 23 arcsec.

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OBSERVATION OF PORPHYRITIC TEXTURE IN HOT FILAMENT CVD DIAMOND FILMS

Modern Physics Letters B ◽

10.1142/s0217984900000148 ◽

2000 ◽

Vol 14 (03) ◽

pp. 89-93

Author(s):

SIJIN HAN ◽

RONGCHUAN FANG ◽

NAIGUI SHANG ◽

YUAN LIAO ◽

DEFEN LE ◽

...

Keyword(s):

Diamond Films ◽

Spherical Shape ◽

Secondary Nucleation ◽

Hot Filament Cvd ◽

Similarity And Difference ◽

Hot Filament ◽

Multiple Twinning ◽

First Time ◽

Porphyritic Texture

The porphyritic texture of diamond films synthesized by hot filament CVD (HFCVD) is reported for the first time. The porphyritic texture has two distinct crystal habits, where phenocrysts are set in a matrix of fine grains. The morphology and quality of films were investigated by scanning electron microscopy and Raman spectroscopy. A growth model employing secondary nucleation and growth illuminates the growth mechanism of this unusual texture. We also compare the similarity and difference between Wild's and our results on the spherical shape of a multiple faceted particle, which is formed by multiple twinning.

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Analysis of Defect-Free Hot Filament CVD-Grown 3C-SiC

Materials Science Forum ◽

10.4028/www.scientific.net/msf.1004.126 ◽

2020 ◽

Vol 1004 ◽

pp. 126-131

Author(s):

Bart Van Zeghbroeck ◽

Ryan Brow ◽

Tomoko Borsa ◽

David Bobela

Keyword(s):

Slow Growth ◽

Step Flow ◽

Surface Nucleation ◽

Domain Boundaries ◽

Hot Filament Cvd ◽

Cvd Growth ◽

Crystallographic Facets ◽

Hot Filament ◽

Step Flow Growth ◽

Sharp Corners

Analysis of hot-filament CVD (HF-CVD) growth of high quality 3C-SiC on micron-sized 3C-SiC mesas is presented. Two types of growth were observed: 1) a relatively slow growth at about 1μm/hour, and 2) an almost three times faster growth, correlated with the presence of domain boundaries in, or adjacent to, the mesas. Both reveal well-defined crystallographic facets and sharp corners between them. The slower growth has been identified to be surface-nucleation-limited, seemingly defect-free, while the faster growth has been identified as being caused by defect-induced step-flow growth. A growth model is presented, yielding a growth rate of 1.18 μm/h for the defect free {111} and (100) plane and 2.8 μm/h for {110} planes.

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