scholarly journals Plasma enhanced hot filament CVD growth of thick carbon nanowall layers

2017 ◽  
Author(s):  
Marco Natali ◽  
Daniele Passeri ◽  
Marco Rossi ◽  
Theodoros Dikonimos ◽  
Nicola Lisi
Keyword(s):  
Hot Filament Cvd ◽  
Cvd Growth ◽  
Hot Filament

Hot Filament CVD Growth of 4H-SiC Epitaxial Layers

2018 ◽  
Vol 924 ◽  
pp. 120-123 ◽  
Author(s):  
Bart van Zeghbroeck ◽  
Hannah Robinson ◽  
Ryan R. Brow
Keyword(s):  
Crystalline Material ◽  
Epitaxial Layers ◽  
Hot Filament Cvd ◽  
Growth Method ◽  
Cvd Growth ◽  
Diffraction Peaks ◽  
Sem Imaging ◽  
Hot Filament ◽  
First Time ◽  
Optical Micrographs

Hot filament CVD (HFCVD) growth of undoped 4H-SiC epitaxial layers on 100 mm n-type 4o-off 4H-SiC substrates is presented as an alternate growth method for the first time. High quality crystalline material with a low density of polytype inclusions has been demonstrated and characterized with optical micrographs, SEM imaging, micro-Raman measurements, and high resolution XRD. Typical growth rates are ~3 μm/hour. Double rocking omega scans revealed diffraction peaks with a FWHM of 23 arcsec.

Analysis of Defect-Free Hot Filament CVD-Grown 3C-SiC

2020 ◽  
Vol 1004 ◽  
pp. 126-131
Author(s):  
Bart Van Zeghbroeck ◽  
Ryan Brow ◽  
Tomoko Borsa ◽  
David Bobela
Keyword(s):  
Slow Growth ◽  
Step Flow ◽  
Surface Nucleation ◽  
Domain Boundaries ◽  
Hot Filament Cvd ◽  
Cvd Growth ◽  
Crystallographic Facets ◽  
Hot Filament ◽  
Step Flow Growth ◽  
Sharp Corners

Analysis of hot-filament CVD (HF-CVD) growth of high quality 3C-SiC on micron-sized 3C-SiC mesas is presented. Two types of growth were observed: 1) a relatively slow growth at about 1μm/hour, and 2) an almost three times faster growth, correlated with the presence of domain boundaries in, or adjacent to, the mesas. Both reveal well-defined crystallographic facets and sharp corners between them. The slower growth has been identified to be surface-nucleation-limited, seemingly defect-free, while the faster growth has been identified as being caused by defect-induced step-flow growth. A growth model is presented, yielding a growth rate of 1.18 μm/h for the defect free {111} and (100) plane and 2.8 μm/h for {110} planes.

Carbon nanorods and graphene-like nanosheets by hot filament CVD: growth mechanisms and electron field emission

2013 ◽  
Vol 1 (46) ◽  
pp. 7703 ◽  
Author(s):  
B. B. Wang ◽  
K. Ostrikov ◽  
T. van der Laan ◽  
K. Zheng ◽  
J. J. Wang ◽  
...  
Keyword(s):  
Field Emission ◽  
Electron Field Emission ◽  
Growth Mechanisms ◽  
Hot Filament Cvd ◽  
Cvd Growth ◽  
Electron Field ◽  
Hot Filament

Hot filament CVD diamond coating of TiC sliders

2007 ◽  
Vol 16 (3) ◽  
pp. 609-615 ◽  
Author(s):  
S. Konoplyuk ◽  
T. Abe ◽  
T. Takagi ◽  
T. Uchimoto
Keyword(s):  
Cvd Diamond ◽  
Diamond Coating ◽  
Hot Filament Cvd ◽  
Cvd Diamond Coating ◽  
Hot Filament

Hot-Filament CVD Methods

2018 ◽  
pp. 797-820
Author(s):  
Alberto Argoitia ◽  
Christopher S. Kovach ◽  
John C. Angus
Keyword(s):  
Hot Filament Cvd ◽  
Hot Filament

Hot Filament CVD

2007 ◽  
pp. 92-93
Author(s):  
C. L Aardahl ◽  
J. W. Rogers
Keyword(s):  
Hot Filament Cvd ◽  
Hot Filament

Si Whisker Growth by Hydrogen Radical using Hot Filament CVD Reactor

2007 ◽  
Vol 1018 ◽  
Author(s):  
Hiroshi Nagayoshi ◽  
Suzuka Nishimura ◽  
Kazutaka Terashima ◽  
Nobuo Matsumoto ◽  
Alexander G. Ulyashin
Keyword(s):  
Residence Time ◽  
Silicon Substrate ◽  
Silicon Surface ◽  
Whisker Growth ◽  
Silicon Hydride ◽  
Particle Layer ◽  
Hot Filament Cvd ◽  
Silicon Whisker ◽  
Hydrogen Radical ◽  
Hot Filament

AbstractThis paper describes the growth mechanism of silicon whisker on a silicon substrate using hot filament CVD reactor. Only hydrogen is used as source gas. The particle layer could be obtained at high filament current condition under hydrogen ambient. XPS analysis result suggests that the particle is composed of tungsten silicide. The deposition condition of the particle layer is much depended on the substrate size, surface condition and the distance between the substrate and the filament. The experimental results suggest that the silicon hydride, which generated at the silicon surface by hydrogen radical etching, react with the tungsten filament material around the filament, depositing on the silicon substrate. The silicon surface is etched by hydrogen radical and its resultant surface morphology is much depended on the particle deposition pattern. Many silicon whiskers, which diameter is varied from 10 to 50 nm, are observed on the textured silicon surface when the residence time of the source gas in the reactor is long. Each whisker has a silicon particle on their tip. The silicon hydride generated by the hydrogen radical etching is much absorbed to the silicide particle when the source gas residence time is long, enabling the silicon whisker growth from the particle. The results suggest that nm size whisker structure is much stable compare to the bulk silicon against etching reaction.

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