Effect of Copper Substitution on the Electrical Transport Properties of La0.7Ba0.1Sr0.2Mn1-xCuxO 3 (X = 0 and 0.05) Manganites

2019 ◽  
Vol 966 ◽  
pp. 331-337
Author(s):  
Budhy Kurniawan ◽  
Dhawud Sabilur Razaq ◽  
Agung Imaduddin

A systematic investigation of polycrystalline La0.7Ba0.1Sr0.2Mn1-xCuxO3 (x = 0 and 0.5) manganite has been conducted with a view to understand the effect of copper substitution on the electrical transport properties and its correlation with structural and morphological properties. The structural and morphological properties of the sample without copper content (x = 0) have been reported previously, while in this research, the structural and morphological properties of sample with 5% copper content (x = 0.5) will be reported. Structural comparison with previous research shows that 5% copper content does not change the rhombohedral structure of the sample without copper content. Comparison of resistivity (ρ) data with the theoretical model shows that the electrical properties of both samples are well described using the electron-electron, electron-phonon, electron-magnon, and kondo-like spin dependent scattering theory. Furthermore, percolation theory which have been used in the model shows that ferromagnetic phase and paramagnetic phase coexisted in both samples. Through copper substitution, the overall resistivity of the sample decrease compared to the sample without copper content. Furthermore, percolation theory demonstrates that ferromagnetic phase of the sample is decreasing as copper ions substituted manganese ion.

2021 ◽  
Author(s):  
Dongha Shin ◽  
Hwa Rang Kim ◽  
Byung Hee Hong

Since of its first discovery, graphene has attracted much attention because of the unique electrical transport properties that can be applied to high-performance field-effect transistor (FET). However, mounting chemical functionalities...


Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 746
Author(s):  
Meiling Hong ◽  
Lidong Dai ◽  
Haiying Hu ◽  
Xinyu Zhang

A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high-resolution transmission electron microscopy, and atomic force microscopy. Upon compression, Ga2Se3 underwent a phase transformation from the zinc-blende to NaCl-type structure at 10.6 GPa under non-hydrostatic conditions, which was manifested by the disappearance of an A mode and the noticeable discontinuities in the pressure-dependent Raman full width at half maximum (FWHMs) and electrical conductivity. Further increasing the pressure to 18.8 GPa, the semiconductor-to-metal phase transition occurred in Ga2Se3, which was evidenced by the high-pressure variable-temperature electrical conductivity measurements. However, the higher structural transition pressure point of 13.2 GPa was detected for Ga2Se3 under hydrostatic conditions, which was possibly related to the protective influence of the pressure medium. Upon decompression, the phase transformation and metallization were found to be reversible but existed in the large pressure hysteresis effect under different hydrostatic environments. Systematic research on the high-pressure structural and electrical transport properties for Ga2Se3 would be helpful to further explore the crystal structure evolution and electrical transport properties for other A2B3-type compounds.


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