The Influence of Mechanical Deformation on the Optical Properties of Laminated As2S3, GeSe2 and As2Se3 Crystals

2006 ◽  
Vol 115 ◽  
pp. 251-254 ◽  
Author(s):  
A.B. Babaev ◽  
I.K. Kamilov ◽  
S.B. Sultanov ◽  
F.S. Gabibov ◽  
A.M. Askhabov

Reversible photostructural conversions (darkening and bleaching) attended by a shift of transmittance edge and by the photoluminescence fatigue effect are revealed. Upon mechanical treatment of crystals the maximum of the luminescence excitation spectrum shifts toward higher energies. The low-energy edge of the luminescence spectrum flattens, and emission intensity increases. The experimental results are interpreted within a configuration model of two stable structural states of molecular groups.

2013 ◽  
Vol 740-742 ◽  
pp. 405-408 ◽  
Author(s):  
Ivan G. Ivanov ◽  
Andreas Gällström ◽  
Stefano Leone ◽  
Olof Kordina ◽  
Nguyen Tien Son ◽  
...  

A set of lines in the photoluminescence spectra of 4H-, 6H-, and 15R-SiC in the near-infrared are attributed to Nb-related defects on the ground of doping experiments conducted with 4H-SiC. A model based on a an exciton bound at the Nb-centre in an asymmetric split vacancy configuration at a hexagonal site is proposed, which explains the structure of the luminescence spectrum and the observed Zeeman splitting of the lines.


2018 ◽  
Vol 5 (3) ◽  
pp. 035044 ◽  
Author(s):  
Rahul Singhal ◽  
Satakshi Gupta ◽  
Ritu Vishnoi ◽  
Sanjeev Aggarwal ◽  
Ganesh D Sharma ◽  
...  

2014 ◽  
Vol 1736 ◽  
Author(s):  
D.J. As ◽  
R. Kemper ◽  
C. Mietze ◽  
T. Wecker ◽  
J.K.N. Lindner ◽  
...  

ABSTRACTIn this contribution we report on the optical properties of cubic AlN/GaN asymmetric multi quantum wells (MQW) structures on 3C-SiC/Si (001) substrates grown by radio-frequency plasma-assisted molecular beam epitaxy (MBE). Scanning transmission electron microscopy (STEM) and spatially resolved cathodoluminescence (CL) at room temperature and at low temperature are used to characterize the optical properties of the cubic AlN/GaN MQW structures. An increasing CL emission intensity with increasing film thickness due to the improved crystal quality was observed. This correlation can be directly connected to the reduction of the linewidth of x-ray rocking curves with increasing film thickness of the c-GaN films. Defects like stacking faults (SFs) on the {111} planes, which also can be considered as hexagonal inclusions in the cubic crystal matrix, lead to a decrease of the CL emission intensity. With low temperature CL line scans also monolayer fluctuations of the QWs have been detected and the observed transition energies agree well with solutions calculated using a one-dimensional (1D) Schrödinger-Poisson simulator.


1994 ◽  
Vol 235-240 ◽  
pp. 2257-2258 ◽  
Author(s):  
R. Markendorf ◽  
M.V. Eremin ◽  
S.V. Varlamov ◽  
D. Brinkmann ◽  
M. Mali ◽  
...  

2014 ◽  
Vol 28 (19) ◽  
pp. 1450128 ◽  
Author(s):  
Mingzhu Yang ◽  
Lihua Mu ◽  
Haiwei Mu ◽  
Shuchen Lü

Li + and Er 3+ codoped Y 2 O 3 powders are synthesized via sol–gel method. The effects of Li + doping on the optical properties of Er 3+: Y 2 O 3 are investigated under 980 nm excitation. The emission intensity of Er 3+ is obviously improved after Li + doping. Moreover, the quenching concentration of 2 H 11/2/4 S 3/2 level of Er 3+ is 3.0 mol% for the samples without Li + but it decreases to 2.0 mol% after introducing 5.0 mol% Li +. This is because Li + doping shrinks the host lattice and decreases the Er 3+– Er 3+ distance, which contribute to the formation of Er 3+ clusters and thus induces the quenching concentration of 2 H 11/2/4 S 3/2 level to decrease.


2016 ◽  
Author(s):  
Indra Sulania ◽  
Jyoti Kaswan ◽  
Vinesh Attatappa ◽  
Ranjeet Kumar Karn ◽  
D. C. Agarwal ◽  
...  

1996 ◽  
Vol 62 (2) ◽  
pp. 95-101
Author(s):  
M. Bertino ◽  
W. Steinhögl ◽  
H. Range ◽  
F. Hofmann ◽  
G. Witte ◽  
...  

2020 ◽  
Vol 59 (14) ◽  
pp. 4507
Author(s):  
Krishn Pal Singh ◽  
Jayashree Majumdar ◽  
Sudeep Bhattacharjee

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