Effects of Bias, Pressure and Temperature in Plasma Damage of Ultra Low-k Films

ABSTRACTPorous low-k dielectrics were studied to determine the changes of optical properties after various plasma treatments for development of scatterometry technique for evaluation of the trench/via sidewall plasma damage. The SiCOH porogen based low-k films were prepared by PE-CVD. The deposited and UV-cured low-k films have been damaged by striping O2Cl2, O2, NH3 and H2N2 based plasmas and CF4/CH2F2/Ar etching plasma. Blanket wafers were studied in this work for the simplicity of thin film optical model. The optical properties of the damaged low-k dielectrics are evaluated the using various angle spectroscopic ellipsometry in range from 2 to 9 eV. Multilayer optical model is applied to fit the measured quantities and the validity is supported by other techniques. The atomic concentration profiles of Si, C, O and H were stated by TOF-SIMS and changes in overall chemical composition were derived from FTIR. Toluene and water based ellipsometric porosimetry is involved to examine the porosity, pore interconnectivity and internal hydrophilicity.

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Low-k integration: Gas screening for cryogenic etching and plasma damage mitigation

Frontiers of Chemical Science and Engineering ◽

10.1007/s11705-019-1820-5 ◽

2019 ◽

Vol 13 (3) ◽

pp. 511-516 ◽

Cited By ~ 1

Author(s):

Romain Chanson ◽

Remi Dussart ◽

Thomas Tillocher ◽

P. Lefaucheux ◽

Christian Dussarrat ◽

...

Keyword(s):

Plasma Damage ◽

Damage Mitigation ◽

Low K

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Effects of Plasma Surface Treatment on the Self-forming Barrier Process in Porous SiOCH

MRS Proceedings ◽

10.1557/proc-1079-n03-10 ◽

2008 ◽

Vol 1079 ◽

Author(s):

Junichi Koike ◽

Zsolt Tökei

Keyword(s):

Cross Section ◽

Deposition Process ◽

Plasma Damage ◽

X Ray ◽

Transmission Electron ◽

Plasma Surface Treatment ◽

Diffusion Barrier Layer ◽

Before And After ◽

Low K ◽

Secondary Ion

ABSTRACTSelf-forming barrier process was carried out on a porous low-k material with the Cu-Mn alloys. The effects of various surface treatments were investigated in the sample having a pore size of 0.9 nm and a porosity of 25%. Before and after annealing, samples were analyzed in cross section with transmission electron microscopy (TEM) and energy dispersive x-ray spectroscopy (EDS). Concentration profile was also analyzed with time-of-flight secondary ion mass spectroscopy (ToF-SIMS). The results indicated the penetration of Cu into the low-k interior during deposition, followed by the segregation of Cu at the low-k/Si interface during subsequent annealing. Although a diffusion barrier layer was formed and no further Cu penetration was not observed during annealing, initial Cu penetration in the deposition process was detrimental and should be prevented by restoring the plasma damage on the low-k surface.

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Plasma Damage Recovery of Organic Low-k Material

Journal of Photopolymer Science and Technology ◽

10.2494/photopolymer.24.263 ◽

2011 ◽

Vol 24 (3) ◽

pp. 263-266 ◽

Cited By ~ 3

Author(s):

Mihoko Hirai ◽

Masahiro Tada ◽

Yoshihito Akiyama ◽

Kazuhiro Koga

Keyword(s):

Plasma Damage ◽

Low K

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Integrated diffusion–recombination model for describing the logarithmic time dependence of plasma damage in porous low-k materials

Microelectronic Engineering ◽

10.1016/j.mee.2010.07.014 ◽

2011 ◽

Vol 88 (5) ◽

pp. 631-634 ◽

Cited By ~ 13

Author(s):

E. Kunnen ◽

G.T. Barkema ◽

C. Maes ◽

D. Shamiryan ◽

A. Urbanowicz ◽

...

Keyword(s):

Time Dependence ◽

Plasma Damage ◽

Recombination Model ◽

Low K

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Effect of ultraviolet curing wavelength on low-k dielectric material properties and plasma damage resistance

Thin Solid Films ◽

10.1016/j.tsf.2011.01.339 ◽

2011 ◽

Vol 519 (11) ◽

pp. 3619-3626 ◽

Cited By ~ 20

Author(s):

Premysl Marsik ◽

Adam M. Urbanowicz ◽

Patrick Verdonck ◽

David De Roest ◽

Hessel Sprey ◽

...

Keyword(s):

Material Properties ◽

Dielectric Material ◽

Ultraviolet Curing ◽

Plasma Damage ◽

Damage Resistance ◽

Low K

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Challenges of Ultra Low-k Dielectric Measurement and Plasma Damage Assessment

MRS Proceedings ◽

10.1557/proc-0914-f04-02 ◽

2006 ◽

Vol 914 ◽

Cited By ~ 3

Author(s):

Thomas Abell ◽

Jeffrey Lee ◽

Mansour Moinpour

Keyword(s):

Integrated Circuit ◽

Dielectric Measurement ◽

Dielectric Films ◽

Plasma Damage ◽

Fast Ion ◽

Rc Delay ◽

Destructive Measurement ◽

Non Destructive ◽

Low K ◽

Physical Principles

AbstractThe implementation of porous low-k and ultra-low k dielectrics to reduce RC delay in integrated circuit interconnect wiring has been fraught with numerous challenges. The obvious challenges of materials design and preservation of the desired electrical and mechanical properties upon subsequent processing have been significant. The vulnerability of these films to damage from fast ion and radiation damage will be discussed in the context of post-deposition processing (including low-k cure and plasma processing damage). This paper attempts to review the challenges associated with destructive and non-destructive measurement of low k dielectric films with respect to underlying physical principles of the metrology. Metrology techniques, assumed to be non-destructive based on experience with dense silicon dioxide, will be discussed with regards to newer and more fragile low-k dielectric films.

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