Ni-Based Ohmic Contacts to Silicon Carbide Examined by Electron Microscopy
2012 ◽
Vol 186
◽
pp. 82-85
◽
Keyword(s):
Ni/Si multilayer contact structures to 4H-SiC after subsequent annealing steps are investigated with electron microscopy methods. After high temperature annealing step, specific defects in the contact structures are observed. The influence of phase transformations during annealings on the morphology on the contacts is discussed and the explanation of formation mechanism of voids within contact layer is proposed.
Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing
1989 ◽
Vol 47
◽
pp. 604-605
2005 ◽
pp. 347-350
2005 ◽
Vol 483-485
◽
pp. 489-492
◽
2013 ◽
Vol 740-742
◽
pp. 485-489
◽
1987 ◽
Vol 5
(11-12)
◽
pp. 484-488
◽
2006 ◽
pp. 871-874
Keyword(s):