Electron-Beam-Induced Current Study of Breakdown Behavior of High-K Gate MOSFETs

2009 ◽  
Vol 156-158 ◽  
pp. 461-466
Author(s):  
Jun Chen ◽  
Takashi Sekiguchi ◽  
Masami Takase ◽  
Naoki Fukata ◽  
Ryu Hasunuma ◽  
...  
Keyword(s):  
Electron Beam ◽  
Gate Dielectric ◽  
Dielectric Breakdown ◽  
Microscopic Investigation ◽  
Oxide Semiconductor ◽  
Induced Current ◽  
Electrical Stress ◽  
High K ◽  
Electron Beam Induced Current ◽  
Induced Defects

We report a dynamic and microscopic investigation of electrical stress induced defects in metal-oxide-semiconductor (MOS) devices with high-k gate dielectric by using electron-beam induced current (EBIC) technique. The correlation between time-dependent dielectric breakdown (TDDB) characteristics and EBIC imaging of breakdown sites are found. A systematic study was performed on pre-existing and electrical stress induced defects. Stress-induced defects are related to the formation of electron trapping defects. The origin of pre-existing defects is also discussed in terms of oxygen vacancy model with comparing different gate electrodes.

Observation of Leakage Sites in High-k Gate Dielectrics in MOSFET Devices by Electron-Beam-Induced Current Technique

2007 ◽  
Vol 131-133 ◽  
pp. 449-454 ◽  
Author(s):  
Takashi Sekiguchi ◽  
J. Chen ◽  
Masami Takase ◽  
Naoki Fukata ◽  
Naoto Umezawa ◽  
...  
Keyword(s):  
Electron Beam ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Induced Current ◽  
Hafnium Silicate ◽  
Bright Spots ◽  
High K ◽  
Electron Beam Induced Current ◽  
Induced Defects

We have succeeded in imaging the leakage sites of hafnium silicate gate dielectrics of metal-oxide-semiconductor field-effect transistors (MOSFETs) by using electron-beam-induced current (EBIC) method. Leakage sites of p-channel MOSFETs were identified as bright spots under appropriate reverse bias condition when the electron beam energy is high enough to generate carriers in the silicon substrate. Most of the leakage sites were observed in the peripheries of shallow trench isolation. These results suggest that some process induced defects are the cause of leakage in these MOSFETs. Our observation demonstrates the advantage of EBIC characterization for failure analysis of high-k MOSFETs.

Multiple Proton Implantations into Silicon: A Combined EBIC and SRP Study

2013 ◽  
Vol 205-206 ◽  
pp. 311-316 ◽  
Author(s):  
Stefan Kirnstötter ◽  
Martin Faccinelli ◽  
Moriz Jelinek ◽  
Werner Schustereder ◽  
Johannes G. Laven ◽  
...  
Keyword(s):  
Electron Beam ◽  
Carrier Concentration ◽  
Silicon Wafer ◽  
Induced Current ◽  
Spreading Resistance ◽  
Doped Silicon ◽  
Radiation Induced ◽  
Electron Beam Induced Current ◽  
Induced Defects

Protons with energies of 1 MeV and 2.5 MeV were implanted into a p-doped silicon wafer and then the wafer was annealed at 350 °C for one hour. This resulted in two n-doped layers in the otherwise p-doped sample. The carrier concentration was measured using spreading resistance profiling while the positions of the four pn-junctions were measured using electron beam induced current measurements. The carrier concentration is not limited by the available hydrogen but by the concentration of suitable radiation induced defects.

Electron-Beam-Induced Current Study of Electronic Property Change at SrTiO3 Bicrystal Interface Induced by Forming Process

2012 ◽  
Vol 725 ◽  
pp. 261-264
Author(s):  
Tetsuji Kato ◽  
Yoshiaki Nakamura ◽  
P.P.T. Son ◽  
Jun Kikkawa ◽  
Akira Sakai
Keyword(s):  
Electron Beam ◽  
Energy Band ◽  
Dielectric Breakdown ◽  
Annealing Process ◽  
Tilt Boundary ◽  
Induced Current ◽  
Forming Process ◽  
Before And After ◽  
The Matrix ◽  
Electron Beam Induced Current

We investigated the spatial variation of energy band structure in a SrTiO3 (001) bicrystal with the (100) 10° tilt boundary before and after the annealing process at 973 K under a vacuum of ~10-7 Torr and after the subsequent forming process with electrical dielectric breakdown, using electron beam induced current (EBIC) method in the temperature range between 200 and 300K. Although the EBIC contrast at the tilt boundary was weak before and after the annealing, it became visible after the forming process and stronger as the observation temperature decreased to less than 260 K. It was found that the EBIC direction at the tilt boundary is opposite to that in the matrix, i.e. the single crystalline regions of both sides of the tilt boundary. In the matrix, the EBIC increased after the annealing and decreased again after the forming process. We propose energy band structures of the bicrystalline SrTiO3 after the annealing and after the forming process.

Sign in / Sign up

Export Citation Format

Share Document