Electrical characterization of silicon wafer bonding interfaces by means of voltage dependent light beam and electron beam induced current and capacitance of Schottky diodes

2011 ◽  
Vol 8 (4) ◽  
pp. 1371-1376 ◽  
Author(s):  
M. Trushin ◽  
O. Vyvenko ◽  
T. Mchedlidze ◽  
M. Reiche ◽  
M. Kittler
Keyword(s):  
Electron Beam ◽  
Light Beam ◽  
Silicon Wafer ◽  
Wafer Bonding ◽  
Schottky Diodes ◽  
Electrical Characterization ◽  
Induced Current ◽  
Voltage Dependent ◽  
Electron Beam Induced Current

Characterization of 4H-SiC pn Structures with Unstable Excess Current

2015 ◽  
Vol 821-823 ◽  
pp. 648-651
Author(s):  
Anatoly M. Strel'chuk ◽  
Eugene B. Yakimov ◽  
Alexander A. Lavrent’ev ◽  
Evgenia V. Kalinina ◽  
Alexander A. Lebedev
Keyword(s):  
Electron Beam ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Secondary Electron ◽  
Induced Current ◽  
Excess Current ◽  
Forward Current ◽  
Electron Beam Induced Current

4H-SiC p+nn+ structures fabricated by implantation of Al into a commercial n-type 4H-SiC epitaxial layer doped to (3-5)Ÿ1015cm-3 have been studied. Structures with unstable excess forward current were characterized by electron beam induced current (EBIC) and secondary electron (SE) methods and by Auger-electron spectroscopy (AES). Numerous defects were found with a depth which exceed the thickness of the p+-layer. Also, it was demonstrated that the concentration of carbon on the SiC surface always exceeds that of silicon, which may be the reason for the initially unstable conductivity via the defects.

Characterization of GaAs wafers and epilayers with electron‐beam‐induced current, etching, and reflected light

1987 ◽  
Vol 62 (10) ◽  
pp. 4248-4254 ◽  
Author(s):  
L. D. Partain ◽  
S. M. Dean ◽  
B. L. Berard ◽  
P. S. McLeod ◽  
L. M. Fraas ◽  
...  
Keyword(s):  
Electron Beam ◽  
Induced Current ◽  
Reflected Light ◽  
Electron Beam Induced Current

Characterization of 4H semi-insulating silicon carbide single crystals using electron beam induced current

2011 ◽  
Vol 65 (5) ◽  
pp. 911-914 ◽  
Author(s):  
Peter G. Muzykov ◽  
Ramesh Krishna ◽  
Sandip Das ◽  
Timothy Hayes ◽  
Tangali S. Sudarshan ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electron Beam ◽  
Single Crystals ◽  
Induced Current ◽  
Electron Beam Induced Current
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