Sn Whiskers Nucleation and Growth - Short Review

2018 ◽  
Vol 280 ◽  
pp. 175-180
Author(s):  
N. Mohd Mokhtar ◽  
Mohd Arif Anuar Mohd Salleh

Sn whisker growth on Cu substrate Pb-free solder is a serious problem in electric and electronic devices and as well as in aerospace applications. Due to the concern on the toxicity of lead by Restriction of Hazardous Substances Directive (RoHS), new lead free materials have been developed, and this resulted in the resurfacing of Sn whisker. The compressive stress, corrosionand surface oxide have been identified as the driving force for Sn whisker formation induced by mechanical alloying and oxidation. In this paper, we report the study to understand the mechanism of Sn whisker growth that control whisker formation on Sn finished.Based on the review, a preliminary conclusion has been made, where the analysis of the topography and microstructural characterization can be determined by evaluating under various environmental influences.Furthermore, the whisker growth happening on lead-free soldered can be considerably reduced by controlling the compressive stress in the solder which initiates the growth of intermetallic compounds (IMCs).

2018 ◽  
Vol 280 ◽  
pp. 151-156 ◽  
Author(s):  
Aimi Noorliyana Hashim ◽  
Mohd Arif Anuar Mohd Salleh

Since the environmental regulations of Reduction of Hazardous Substances (RoHS) directive came into effect in Europe and Asia on July 1, 2006, requiring the removal of any lead (Pb) content from the electronics industry, the issue of tin (Sn) whisker growth from pure Sn and SnPb-free alloys has become one of the most imperative issues that need to be resolved. Moreover, with the increasing demand for electronics miniaturization, Sn whisker growth is a severe threat to the reliability of microelectronic devices. Sn whiskers grow spontaneously from an electrodeposited tin coating on a copper substrate at room temperature, which can lead to well-documented system failures in electronics industries. The Sn whisker phenomenon unavoidably gives rise to troubles. This paper briefly reviews to better understand the fundamental properties of Sn whisker growth and at the same time discover the effective mitigation practices for whisker growth in green electronic devices. It is generally accepted that compressive stress generated from the growth of Cu6Sn5 intermetallic compound (IMC) is the primary driving force for Sn whisker growth during room temperature storage. It is, therefore, important to determine that the relationship between IMC growth and Sn whisker growth. Reduction of stress in the IMC layer can therefore reduce the driving force for whisker formation and be used as a means for whisker mitigation. To date, there are no successful methods that can suppress the growth of Sn whisker as efficient as Pb addition. It is hoped that the Sn whisker growth mechanisms are understood better in the future, with better measuring and monitoring methodologies and systems being developed, the real solutions may be eventually developed to eliminate or mitigate the Sn whisker problems of green reliability lead-free electronic assemblies.


2008 ◽  
Vol 23 (7) ◽  
pp. 2017-2022 ◽  
Author(s):  
C.C. Wei ◽  
P.C. Liu ◽  
Chih Chen ◽  
K.N. Tu

Electromigration at 5 × 104 A/cm2 and 100 °C was conducted to grow composite Pb/Sn whiskers from SnPb solders, in which a Pb whisker grows first and then a whisker of Sn grows. In some cases, small Sn islands are embedded in Pb whiskers. The diameter of a composite whisker is <1 μm, which is much smaller than that of spontaneous Sn whisker growth on leadframes. The growth orientation of Pb whiskers was in the [110], [1¯11], and [112] directions. This investigation proposes that compressive stress generated by electromigration at the anode provides the force driving whisker growth. Therefore, accelerated tests of whisker growth at higher temperatures using electromigration are feasible.


2007 ◽  
Vol 22 (11) ◽  
pp. 3226-3232 ◽  
Author(s):  
Shi-Bo Li ◽  
Guo-Ping Bei ◽  
Hong-Xiang Zhai ◽  
Zhi-Li Zhang ◽  
Yang Zhou ◽  
...  

Sn whiskers can form at room temperature on the agglomerated flakes produced by mechanical alloying (MA) of Ti, Sn, and C powders, whether the flakes are stored in air or water. The Sn whiskers forming in air are tens of micrometers to several centimeters in length and 0.5 to ∼10 μm in diameter. Whereas a large amount of Sn polyhedra forms on the flakes that are stored in water, a small amount of Sn whiskers forms on the polyhedra. The driving force for Sn whisker formation is the compressive stress induced by mechanical alloying (MA) and oxidation. The mechanism about the spontaneous growth of metal whiskers is discussed.


Author(s):  
Chad L. Rodekohr ◽  
George T. Flowers ◽  
Michael J. Bozack ◽  
Robert N. Dean ◽  
Robert L. Jackson ◽  
...  

Implementation of Restriction of Hazardous Substances (RoHS) directives regarding lead (Pb)-free electronics has resulted in the use of Pb-free and tin (Sn)-rich films as board finishes. These films pose serious reliability issues due to spontaneous Sn whisker growth formerly mitigated by the presence of Pb. Tangential compressive stress within thin films has long been cited as a principal cause of whisker growth, but there have been few direct stress measurements reported in the literature. In this study, we have manufactured two precision devices to impose eight known tangential (compressive and tensile) stress levels on Sn/Aluminum (Al) thin film/substrate systems. The results show that large numbers (∼ 103/cm2) of Sn whiskers are present on films subjected to both compressive and tensile extrinsic stresses and the lowest whisker risk occurs in films near the zero stress condition.


2015 ◽  
Vol 1110 ◽  
pp. 235-240 ◽  
Author(s):  
Tomomi Sakakida ◽  
Tatsuo Kubouchi ◽  
Yasuyuki Miyano ◽  
Mamoru Takahashi ◽  
Osamu Kamiya

In Pb-free Al-Sn welding of electrolytic parts, single-crystal Sn whiskers easily form and can cause problems such as short circuits. Here we report that the growth of Sn whiskers in the weld zone of Al electrolytic condenser leads was suppressed in a vacuum environment. We examined the effect of the environment and weld metal microstructure in order to understand how to control and prevent whisker growth. In vacuum, the weld zone did not form whiskers after more than 100 h, whereas in air, whiskers grew within several hours. This suggests that whiskers require oxygen to form. The growth can be explained by the energy balance between the potential energy of the weld metal and the surface energy of the whisker. Our results will contribute to developing techniques for suppressing the formation of Sn whiskers during the percussion welding of Al electrolytic capacitor leads.


JOM ◽  
2012 ◽  
Vol 64 (10) ◽  
pp. 1174-1175 ◽  
Author(s):  
Srinivas Chada

Author(s):  
Aimi Noorliyana Hashim ◽  
Mohd Arif Anuar Mohd Salleh ◽  
Muhammad Mahyiddin Ramli ◽  
Khor Chu Yee ◽  
Noor Zaimah Mohd Mokhtar

2010 ◽  
Vol 44-47 ◽  
pp. 2691-2695
Author(s):  
Jin Song Zhang ◽  
Jian Hua Zhang

Sn whiskers can grow spontaneously on the surface in Sn alloy coatings. This paper focused on the mechanism of whisker growth on the pure Sn coating to Cu leads in electronic components. After the rack plating process the pure Sn coating was annealed at 150°C for one hour and measured about 10mm in thickness. Then samples endured the high temperature/humidity storage tests (60°C and 87%RH) from 1 month to 6 months. The experimental results revealed that Sn whiskers were prone to grow from the surface with local corrosion in the Sn coating. This was the high temperature/humidity storage provided much moisture to cause an electrochemistry corrosion between Sn and H2O. The excess formation of SnO2 had a large molar volume comparing to Sn and this generated a high inner stress in the corroded areas to shear the coating surface producing the defects. The compressive stress deriving from the formation of Cu-Sn intermetallic compounds drove Sn whiskers initially grew from the corroded areas.


2011 ◽  
Vol 509 (5) ◽  
pp. L52-L55 ◽  
Author(s):  
Huan Ye ◽  
Songbai Xue ◽  
Liang Zhang ◽  
Zhengxiang Xiao ◽  
Yuhua Hu ◽  
...  

Author(s):  
Aimi Noorliyana Hashim ◽  
Mohd Arif Anuar Mohd Salleh ◽  
Noor Zaimah Mohd Mokhtar

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