scholarly journals Synthesis of Highly Oriented Diamond Film and Control of Its Surface Morphology.

1997 ◽  
Vol 48 (1) ◽  
pp. 8-13
Author(s):  
Hideaki MAEDA ◽  
Takeyasu SAITO ◽  
Katsuki KUSAKABE ◽  
Shigeharu MOROOKA
2012 ◽  
Vol 06 ◽  
pp. 172-177
Author(s):  
Nam-Su Kwak ◽  
Jae-Yeol Kim

In this study, piezoelectric actuator, Flexure guide, Power transmission element and control method and considered for Nano-positioning system apparatus. The main objectives of this thesis were to develop the 3-axis Ultra-precision stages which enable the 3-axis control by the manipulation of the piezoelectric actuator and to enhance the precision of the Ultra-Precision CNC lathe which is responsible for the ductile mode machining of the hardened-brittle material where the machining is based on the single crystal diamond. Ultra-precision CNC lathe is used for machining and motion error of the machine are compensated by using 3-axis Ultra-precision stage. Through the simulation and experiments on ultra-precision positioning, stability and priority on Nano-positioning system with 3-axis ultra-precision stage and control algorithm are secured by using NI Labview. And after applying the system, is to analyze the surface morphology of the mold steel (SKD61)


Author(s):  
Jiang Li Lin ◽  
Jun Guo Ran ◽  
Tian Fu Wang ◽  
Li Gou ◽  
Ya Hui Hua ◽  
...  

1997 ◽  
Vol 71 (8) ◽  
pp. 1044-1046 ◽  
Author(s):  
Masashi Ishii ◽  
Sohachi Iwai ◽  
Tatzuo Ueki ◽  
Yoshinobu Aoyagi

2017 ◽  
Vol 8 (11) ◽  
pp. 1754-1759 ◽  
Author(s):  
Yutaro Hirai ◽  
Takeshi Wakiya ◽  
Hiroshi Yabu

Submicron-sized virus-like particles comprising asymmetric PS-b-PtBA diblock copolymer particles having dot patterns on their surface were successfully prepared by a simple solvent evaporation process.


1994 ◽  
Vol 340 ◽  
Author(s):  
George A. Patterson ◽  
James S.C. Chang

ABSTRACTIn the production MBE environment it is important to maintain low densities of oval defects and particle induced defects in epitaxial films that are used for the fabrication ofGaAs ICs. Most often, the grown layers are characterized on a sample basis by use of an optical microscope. The disadvantages of this technique are the time and labor involved.The data obtained is incomplete, dependent on training, and subjective. A preferred method would be to develop an inspection method that characterizes the surface morphology ofall MBE grown GaAs wafers and the resulting defect density. The use of a laser wafer surface scanning system has allowed us to reproducably inspect 100% of wafers. Rapid diagnosis of epitaxial problems has resulted in an improved understanding of how to routinely produce high quality epitaxial films for GaAs IC production. This work will highlight the production benefits derived from employing 100% inspection of MBE grown GaAs wafers and provide 2D maps. The relationship between gallium source operation and defect sizes will be discussed.


2016 ◽  
Vol 25 (4) ◽  
pp. 49-53
Author(s):  
Sung Cheol Park ◽  
Seong Ho Son ◽  
Yong Hwan Kim ◽  
Chul Woong Han ◽  
Ki-Woong Lee

2007 ◽  
Vol 336-338 ◽  
pp. 2543-2545
Author(s):  
Jiang Li Lin ◽  
Jun Guo Ran ◽  
Tian Fu Wang ◽  
Li Gou ◽  
Ya Hui Hua ◽  
...  

The surface morphology of film material directly affects its physical performance. It is of great significance for finding out its prospective physical performance to characterize the surface morphology of film material. It is hard to characterize them with some conventional methods. The surface morphology of film material was described from the fractal point of view, and the dimension was correlated with the resistivity of material. The [100]-orientated diamond film was primarily investigated. The results show that the greater the crystal grain is, the more uniform and regular the orientation is; and the more compact the arrangement is, the greater the fractal box dimension is. Moreover, when fractal box dimensions were within a certain range approximately from 2.92 to 2.97, it presents positively correlative relation with the logarithm of resistivity, Log(ρ), which resembles the Logistic curve. However, when the other dimensions are beyond the range mentioned above, resistivity doesn’t change with the increase in dimensions of fractal. This study will conduce to illustrating the relationship between the structure of crystal exemplified by arrangement and physical performance as well as material preparation.


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