Instrumentation for Innovative Semiconductor Power Devices Reliability Tests

2013 ◽  
Vol 4 (2) ◽  
pp. 119-127 ◽  
Author(s):  
C. Pace ◽  
J. L. Hernandez Ambato ◽  
D. De Pasquale ◽  
G. Consentino
Keyword(s):  
Power Devices

Defect engineering in SiC technology for high-voltage power devices

2020 ◽  
Vol 13 (12) ◽  
pp. 120101
Author(s):  
Tsunenobu Kimoto ◽  
Heiji Watanabe
Keyword(s):  
High Voltage ◽  
Defect Engineering ◽  
Power Devices

Analysis of power devices breakdown behaviour by ion beam and electron beam induced charge microscopy

2008 ◽  
Author(s):  
R. Siemieniec ◽  
A. Pugatschow ◽  
C. Geissler ◽  
H.-J. Schulze ◽  
F.-J. Niedernostheide ◽  
...  
Keyword(s):  
Electron Beam ◽  
Ion Beam ◽  
Power Devices ◽  
Induced Charge

Architecture Choice for Radiation-Hard AlGaN/GaN HEMT Power Devices

2017 ◽  
Author(s):  
D. Wellekens ◽  
S. Stoffels ◽  
A. Luu ◽  
M. Haussy ◽  
M. Melotte ◽  
...  
Keyword(s):  
Power Devices ◽  
Gan Hemt ◽  
Radiation Hard

scholarly journals A Comparative Study of GaN HEMT and Si MOSFET-Based Active Clamp Forward Converters

Energies ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 4160
Author(s):  
Xiaobin Li ◽  
Hongbo Ma ◽  
Junhong Yi ◽  
Song Lu ◽  
Jianping Xu
Keyword(s):  
Comparative Analysis ◽  
Power Density ◽  
Load Condition ◽  
High Electron ◽  
Power Devices ◽  
Voltage Range ◽  
Gan Hemt ◽  
Active Clamp ◽  
Forward Converters ◽  
Bus Voltage

Compared with conventional forward converters, active clamp forward (ACF) converters have many advantages, including lower voltage stress on the primary power devices, the ability to switch at zero voltage, reduced EMI and duty cycle operation above 50%. Thus, it has been the most popular solution for the low bus voltage applications, such as 48 V and 28 V. However, because of the poor performance of Si MOSFETs, the efficiency of active clamp forward converters is difficult to further improved. Focusing on the bus voltage of 28 V with 18~36 V voltage range application, the Gallium Nitride high electron-mobility transistors (GaN HEMT) with ultralow on-resistance, low parasitic capacitances, and no reverse recovery, is incorporated into active clamp forward converters for achieving higher efficiency and power density, in this paper. Meanwhile, the comparative analysis is performed for Si MOSFET and GaN HEMT. In order to demonstrate the feasibility and validity of the proposed solution and comparative analysis, two 18~36 V input, 120 W/12 V output, synchronous rectification prototype with different power devices are built and compared in the lab. The experimental results show the GaN version can achieve the efficiency of 95.45%, which is around 1% higher than its counterpart under the whole load condition and the same power density of 2.2 W/cm3.

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