Growing Behavior of Nanocrystalline TiN Films by Asymmetric Pulsed DC Reactive Magnetron Sputtering

2011 ◽  
Vol 48 (5) ◽  
pp. 342-347 ◽  
Author(s):  
Man-Geun Han ◽  
Sung-Yong Chun
Author(s):  
Kai Yang ◽  
Jianqing Jiang ◽  
Mingyuan Gu

Titanium nitride (TiN) films were grown on Si (111) and 95W18Cr4V high-speed steel substrates using DC reactive magnetron sputtering technique with different deposition time. The changes in crystal growth orientation of the TiN films were measured by X-ray diffraction (XRD). The surface & cross-sectional morphologies of TiN films were analyzed using field emission scanning electron microscopy (FESEM). The hardness and adhesive property of TiN films were evaluated as well. It is found that the increase of the film thickness favors the formation of the {111} preferred orientation of TiN films. When the {111} preferred orientation is presented, TiN films exhibit a kind of surface morphology of triangular pyramid with right angles. With the increase of the film thickness, the columnar grains continuously grow lengthwise and breadthwise. The size of grains influences the hardness of TiN films more greatly. The adhesive property of the film/substrate interface decreased with increasing film thickness.


2003 ◽  
Vol 783 ◽  
Author(s):  
Jung W. Lee ◽  
Jerome J. Cuomo ◽  
Baxter F. Moody ◽  
Yong S. Cho ◽  
Roupen L. Keusseyan

ABSTRACTThis preliminary work reports the preparation of AlN thin films on an LTCC (low temperature co-fired ceramics) substrate by pulsed dc reactive magnetron sputtering and the limited characterization focusing on microstructure and crystal orientation. The main focus will be placed on the effects of changing pulsed frequency. The AlN thin film showed good adhesion with the substrate and columnar structures having small grains regardless of pulsed frequency. The crystal orientation of AlN thin films was dependent on pulsed frequency according to the result of XRD patterns. The preferred (002) orientation was obtained at a pulsed frequency of 100 kHz. The broad band of 300 to 650 nm observed in photoluminescence spectrum was believed due to defects associated with the presence of oxygen impurities.


2011 ◽  
Vol 520 (1) ◽  
pp. 272-279 ◽  
Author(s):  
M. Horprathum ◽  
P. Eiamchai ◽  
P. Chindaudom ◽  
N. Nuntawong ◽  
V. Patthanasettakul ◽  
...  

2015 ◽  
Vol 659 ◽  
pp. 550-554
Author(s):  
Pisitpat Nimnual ◽  
Aparporn Sakulkalavek ◽  
Rachsak Sakdanuphab

Multi-functional thin films have gained increasing importance in a decorative application. Among the available material, titanium nitride (TiN) thin film is interesting due to its golden color and mechanical resistance. Beside their properties, the corrosion property of TiN films is mainly considered in order to extend the life time. In this work, the TiN thin films were deposited on 3x3 cm2 Si(100) substrates by dc reactive magnetron sputtering technique. The effects of N2 partial pressure (PN2) on deposited film properties such as microstructure, surface morphology, color, mechanical and corrosion properties were investigated. We found that the crystal structure of the TiN films exhibit the (200) preferred orientation. The color of TiN films change from gold-yellow to gold-red colors by increasing of N2 partial pressure that could be explained by Drude model. The TiN films have smoother surface when the N2 partial pressure increases. Standard corrosion tests in artificial sweat solution show the corrosion current density (icorr) in the range between 0.25 to 4.25 mA/cm2 and the polarization resistance increases with increasing of N2 partial pressure. The highest hardness of the film is approximately 40 GPa with elastic modulus of 340 GPa. We conclude that N2 partial pressure corelates with color, mechanical property and corrosion resistance of TiN films, which were optimized to use in decorative application.


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