Characterization of Titanium Nitride Films Prepared by DC Reactive Magnetron Sputtering at Different Deposition Time

2007 ◽  
Author(s):  
Kai Yang ◽  
Jianqing Jiang ◽  
Mingyuan Gu
Keyword(s):  
Magnetron Sputtering ◽  
Film Thickness ◽  
Titanium Nitride ◽  
Deposition Time ◽  
Adhesive Property ◽  
Preferred Orientation ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Tin Films ◽  
Dc Reactive Magnetron Sputtering

Titanium nitride (TiN) films were grown on Si (111) and 95W18Cr4V high-speed steel substrates using DC reactive magnetron sputtering technique with different deposition time. The changes in crystal growth orientation of the TiN films were measured by X-ray diffraction (XRD). The surface & cross-sectional morphologies of TiN films were analyzed using field emission scanning electron microscopy (FESEM). The hardness and adhesive property of TiN films were evaluated as well. It is found that the increase of the film thickness favors the formation of the {111} preferred orientation of TiN films. When the {111} preferred orientation is presented, TiN films exhibit a kind of surface morphology of triangular pyramid with right angles. With the increase of the film thickness, the columnar grains continuously grow lengthwise and breadthwise. The size of grains influences the hardness of TiN films more greatly. The adhesive property of the film/substrate interface decreased with increasing film thickness.

The Influence of N2 Partial Pressure on Color, Mechanical, and Corrosion Properties of TiN Thin Films Deposited by DC Reactive Magnetron Sputtering

2015 ◽  
Vol 659 ◽  
pp. 550-554
Author(s):  
Pisitpat Nimnual ◽  
Aparporn Sakulkalavek ◽  
Rachsak Sakdanuphab
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Partial Pressure ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Corrosion Properties ◽  
Tin Films ◽  
Dc Reactive Magnetron Sputtering ◽  
Tin Thin Films ◽  
Mechanical And Corrosion Properties

Multi-functional thin films have gained increasing importance in a decorative application. Among the available material, titanium nitride (TiN) thin film is interesting due to its golden color and mechanical resistance. Beside their properties, the corrosion property of TiN films is mainly considered in order to extend the life time. In this work, the TiN thin films were deposited on 3x3 cm2 Si(100) substrates by dc reactive magnetron sputtering technique. The effects of N2 partial pressure (PN2) on deposited film properties such as microstructure, surface morphology, color, mechanical and corrosion properties were investigated. We found that the crystal structure of the TiN films exhibit the (200) preferred orientation. The color of TiN films change from gold-yellow to gold-red colors by increasing of N2 partial pressure that could be explained by Drude model. The TiN films have smoother surface when the N2 partial pressure increases. Standard corrosion tests in artificial sweat solution show the corrosion current density (icorr) in the range between 0.25 to 4.25 mA/cm2 and the polarization resistance increases with increasing of N2 partial pressure. The highest hardness of the film is approximately 40 GPa with elastic modulus of 340 GPa. We conclude that N2 partial pressure corelates with color, mechanical property and corrosion resistance of TiN films, which were optimized to use in decorative application.

Effect of Thickness on Microstructure, Electrical and Optical Properties of Zirconium Nitride Thin Film Prepared by DC Reactive Magnetron Sputtering at Room Temperature

2013 ◽  
Vol 770 ◽  
pp. 217-220
Author(s):  
Mano Valaiauksornlikit ◽  
Worawarong Rakreungdet ◽  
Mati Horprathum ◽  
Pitak Eiamchai ◽  
Viyapol Patthanasettakul ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Reactive Magnetron Sputtering ◽  
Zirconium Nitride ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Substrate Heating ◽  
Dc Reactive Magnetron Sputtering ◽  
Measured Resistivity

Zirconium Nitride (ZrN) thin films were prepared by dc reactive magnetron sputtering without an external substrate heating on silicon (100) wafer and glass slide. The as-deposited films obtained from different conditions and various films thickness was investigated for physical, optical and electrical properties. First, the microstructure and film morphology were examined by X-ray diffraction (XRD), field-emission scanning electron microscope (FE-SEM). The optical transparency was measured by UV-vis spectrophotometer. Finally, the electrical properties, based on measured resistivity, were studied by four-point probe. The result showed that the ZrN films were all well orientated in the (111) plane. When the film thickness was increased, the grain size was also increased. The effect of the film thickness was observed in the charge in colors and optical transmission of the films.

scholarly journals Surface morphology of titanium nitride thin films synthesized by DC reactive magnetron sputtering

2015 ◽  
Vol 33 (1) ◽  
pp. 137-143 ◽  
Author(s):  
Ştefan Ţǎlu ◽  
Sebastian Stach ◽  
Shahoo Valedbagi ◽  
S. Mohammad Elahi ◽  
Reza Bavadi
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Titanium Nitride ◽  
Fractal Analysis ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Dc Reactive Magnetron Sputtering ◽  
Tin Thin Films

AbstractIn this paper the influence of temperature on the 3-D surface morphology of titanium nitride (TiN) thin films synthesized by DC reactive magnetron sputtering has been analyzed. The 3-D morphology variation of TiN thin films grown on p-type Si (100) wafers was investigated at four different deposition temperatures (473 K, 573 K, 673 K, 773 K) in order to evaluate the relation among the 3-D micro-textured surfaces. The 3-D surface morphology of TiN thin films was characterized by means of atomic force microscopy (AFM) and fractal analysis applied to the AFM data. The 3-D surface morphology revealed the fractal geometry of TiN thin films at nanometer scale. The global scale properties of 3-D surface geometry were quantitatively estimated using the fractal dimensions D, determined by the morphological envelopes method. The fractal dimension D increased with the substrate temperature variation from 2.36 (at 473 K) to 2.66 (at 673 K) and then decreased to 2.33 (at 773 K). The fractal analysis in correlation with the averaged power spectral density (surface) yielded better quantitative results of morphological changes in the TiN thin films caused by substrate temperature variations, which were more precise, detailed, coherent and reproducible. It can be inferred that fractal analysis can be easily applied for the investigation of morphology evolution of different film/substrate interface phases obtained using different thin-film technologies.

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