Mechanical and Electrical Properties of Si-SiC Fabricated Using SiC-C Composite Powders Synthesized by Sol-gel Process

2014 ◽  
Vol 51 (5) ◽  
pp. 459-465
Author(s):  
Sung Il Youn ◽  
Gyung Sun Cho ◽  
Mi Rae Youm ◽  
Dae Soon Lim ◽  
Sang Whan Park
Keyword(s):  
Electrical Properties ◽  
Sol Gel ◽  
Composite Powders ◽  
Mechanical And Electrical Properties ◽  
Sol Gel Process

Study of the structural and electrical properties of PMNT 68/32 ceramic prepared by a sol–gel process

2005 ◽  
Vol 78 (4) ◽  
pp. 329-336 ◽  
Author(s):  
Pawan Kumar ◽  
O. P. Thakur ◽  
Chandra Prakash ◽  
T. C. Goel
Keyword(s):  
Electrical Properties ◽  
Sol Gel ◽  
Structural And Electrical Properties ◽  
Sol Gel Process

Influence of Bi3.15Nd0.85Ti3O12 Buffer Layer on Structure and Electrical Properties of Bi0.94Ce0.06Fe0.97Ti0.03O3 Thin Films

2014 ◽  
Vol 703 ◽  
pp. 51-55
Author(s):  
Jia Zeng ◽  
Ming Hua Tang ◽  
Zhen Hua Tang ◽  
Yong Guang Xiao ◽  
Long Peng ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Current Density ◽  
Coercive Field ◽  
Remnant Polarization ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Sol Gel Process

Bi0.94Ce0.06Fe0.97Ti0.03O3 and Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films were fabricated via sol-gel process on Pt/Ti/SiO2/Si substrates. The influence of Bi3.15Nd0.85Ti3O12 buffer layer on microstructure and electrical properties of Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films were investigated in detail. Well-saturated P-E hysteresis loops can be obtained in Bi0.94Ce0.06Fe0.97Ti0.03O3 films with Bi3.15Nd0.85Ti3O12 buffer. The remnant polarization (2Pr) of the double-layered thin films is 112 μC/cm2. The coercive field (2Ec) of double-layered films is 672 kV/cm, which is much lower than that of the Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films. The leakage current density of Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films is 4.12×10-5 A/cm2.

Effect of Ga content and sintering time on electrical properties of InGaZnO thin film transistors fabricated by sol–gel process

2011 ◽  
Vol 326 (1) ◽  
pp. 175-178 ◽  
Author(s):  
Jun Hyuk Choi ◽  
Soo Min Hwang ◽  
Chang Min Lee ◽  
Ji Cheol Kim ◽  
Geun Chul Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Sintering Time ◽  
Sol Gel Process ◽  
Ga Content

Spectroscopic and electrical properties of SiO2 films prepared by simple and cost effective sol–gel process

2011 ◽  
Vol 78 (2) ◽  
pp. 695-699 ◽  
Author(s):  
M. Vishwas ◽  
K. Narasimha Rao ◽  
A.R. Phani ◽  
K.V. Arjuna Gowda ◽  
R.P.S. Chakradhar
Keyword(s):  
Electrical Properties ◽  
Sol Gel ◽  
Cost Effective ◽  
Sio2 Films ◽  
Sol Gel Process
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