Simulation of Three-Dimensional Strained Heteroepitaxial Growth Using Kinetic Monte Carlo

2011 ◽  
Vol 10 (5) ◽  
pp. 1089-1112 ◽  
Author(s):  
Tim P. Schulze ◽  
Peter Smereka

AbstractEfficient algorithms for the simulation of strained heteroepitaxial growth with intermixing in 2+1 dimensions are presented. The first of these algorithms is an extension of the energy localization method [T. P. Schulze and P. Smereka, An energy localization principle and its application to fast kinetic Monte Carlo simulation of heteroepitaxial growth, J. Mech. Phys. Sol., 3 (2009), 521-538] from 1+1 to 2+1 dimensions. Two approximations of this basic algorithm are then introduced, one of which treats adatoms in a more efficient manner, while the other makes use of an approximation of the change in elastic energy in terms of local elastic energy density. In both cases, it is demonstrated that a reasonable level of fidelity is achieved. Results are presented showing how the film morphology is affected by misfit and deposition rate. In addition, simulations of stacked quantum dots are also presented.

2007 ◽  
Vol 21 (23n24) ◽  
pp. 4219-4224 ◽  
Author(s):  
CHI-HANG LAM ◽  
M. T. LUNG

Arrays of nanosized three dimensional islands are known to self-assemble spontaneously on strained heteroepitaxial thin films. We simulate the dynamics using kinetic Monte Carlo method based on a ball and spring lattice model. Green's function and super-particle methods which greatly enhance the computational efficiency are explained.


2013 ◽  
Vol 740-742 ◽  
pp. 295-300 ◽  
Author(s):  
Massimo Camarda ◽  
Antonino La Magna ◽  
Francesco La Via

We use three dimensional kinetic Monte Carlo simulations on super-lattices to study the hetero-polytypical growth of cubic silicon carbide polytype (3C-SiC) on misoriented hexagonal (4H and 6H) substrates finding that the growth on misoriented (4°-10° degree off) 6H substrates, with step bunched surfaces, can strongly improve the quality of the cubic epitaxial film promoting 3C single domain growths


2013 ◽  
Vol 1559 ◽  
Author(s):  
Andreas Latz ◽  
Lothar Brendel ◽  
Dietrich E. Wolf

ABSTRACTWhile the self-learning kinetic Monte Carlo (SLKMC) method enables the calculation of transition rates from a realistic potential, implementations of it were usually limited to one specific surface orientation. An example is the fcc (111) surface in Latz et al. 2012, J. Phys.: Condens. Matter 24, 485005. This work provides an extension by means of detecting the local orientation, and thus allows for the accurate simulation of arbitrarily shaped surfaces. We applied the model to the diffusion of Ag monolayer islands and voids on a Ag(111) and Ag(001) surface, as well as the relaxation of a three-dimensional spherical particle.


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